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一种基于氧化铒薄膜的忆阻器件及其制备方法 【EN】Memristor based on erbium oxide film and preparation method thereof

申请(专利)号:CN201910051937.4国省代码:四川 51
申请(专利权)人:【中文】西南交通大学【EN】SOUTHWEST JIAOTONG University
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摘要:
【中文】本发明公开了基于氧化铒薄膜的忆阻器件及其制备方法,所述忆阻器括顶电极、氧化铒薄膜以及底电极,所述氧化铒薄膜位于顶电极和底电极之间,其中,顶电极和底电极的材料分别为氧化铟锡或银。一种上述基于氧化铒薄膜的忆阻器的制备方法,包括以下步骤:S1:清洗衬底;S2:采用磁控溅射法,以氧化铟锡或银靶材为溅射源,在基片上溅射沉积底电极;S3:采用射频溅射法,以氧化铒靶材为溅射源,在底电极上沉积功能层Er2O3薄膜;S4:采用直流溅射法,以氧化铟锡或银靶材为溅射源,在氧化铒薄膜表面沉积上电极。器件结构简单、性能优异、稳定、重复性好,制备方法步骤简单,在新型存储器、振荡器等电子器件领域具有很好的应用前景。 【EN】The invention discloses a memristor based on an erbium oxide film and a preparation method thereofThe erbium oxide film is positioned between the top electrode and the bottom electrode, wherein the top electrode and the bottom electrode are made of indium tin oxide or silver respectively. A preparation method of the memristor based on the erbium oxide film comprises the following steps: s1: cleaning the substrate; s2: sputtering and depositing a bottom electrode on a substrate by adopting a magnetron sputtering method and taking indium tin oxide or silver target material as a sputtering source; s3: depositing a functional layer Er on the bottom electrode by using an erbium oxide target as a sputtering source by adopting a radio frequency sputtering method2O3A film; s4: and depositing an upper electrode on the surface of the erbium oxide film by adopting a direct current sputtering method and taking an indium tin oxide or silver target material as a sputtering source. The device has the advantages of simple structure, excellent performance, stability, good repeatability and simple preparation method steps, and has good application prospect in the field of electronic devices such as novel memories, oscillators and the like.

主权项:
【中文】1.一种基于氧化铒薄膜的忆阻器的制备方法,其特征在于,包括以下步骤: S1、清洗衬底:洗净基片并吹干,清洗的具体步骤是:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10~20min,吹干后备用; S2、制备底电极:采用磁控溅射法,以氧化铟锡或银靶材为溅射源,在基片上溅射沉积底电极;在磁控溅射腔体中安装氧化铟锡或银靶材,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min; S3、制备功能层:采用射频溅射法,以氧化铒靶材为溅射源,在底电极上沉积功能层ErO薄膜;设置靶基距为8~10厘米,将溅射室本底真空度抽至小于5×10Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,溅射功率为80~100W,溅射时间为20~30min,在底电极上沉积功能层Er2O3薄膜,其厚度是300~500nm; S4、沉积顶电极:采用直流溅射法,以氧化铟锡或银靶材为溅射源,在氧化铒薄膜表面沉积上电极,制得氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构的忆阻器;设置靶基距为8~12厘米,将溅射室本底真空度抽至小于5×10Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min。 【EN】1. A preparation method of a memristor based on an erbium oxide film is characterized by comprising the following steps: s1, cleaning the substrate: cleaning a substrate and drying the substrate by blowing, wherein the cleaning comprises the following specific steps: sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively ultrasonically cleaning for 10-20min, and blow-drying for later use; s2, preparing a bottom electrode: sputtering and depositing a bottom electrode on a substrate by adopting a magnetron sputtering method and taking indium tin oxide or silver target material as a sputtering source; installing indium tin oxide or silver target material in a magnetron sputtering cavity, setting the distance between the target material and the substrate to be 8-12 cm, and pumping the background vacuum degree of a sputtering chamber to be less than 5 multiplied by 10Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the direct-current sputtering current is 0.2-0.3A, and the sputtering time is 10-20 min; s3, preparing a functional layer: depositing a functional layer Er on the bottom electrode by using an erbium oxide target as a sputtering source by adopting a radio frequency sputtering methodOA film; setting the target base distance to be 8-10 cm, and pumping the background vacuum degree of the sputtering chamber to be less than 5 multiplied by 10Pa, the purity of the introduced gas is 99.999 percentThe argon is used as working gas, the sputtering pressure is 1.0-2.0 Pa, the sputtering power is 80-100W, the sputtering time is 20-30 min, and a functional layer Er2O3 thin film is deposited on the bottom electrode, wherein the thickness of the thin film is 300-500 nm; s4, depositing a top electrode: depositing an upper electrode on the surface of the erbium oxide film by using an indium tin oxide or silver target material as a sputtering source by adopting a direct-current sputtering method to prepare the memristor with an indium tin oxide or silver/erbium oxide/indium tin oxide or silver sandwich structure; setting the target base distance to be 8-12 cm, and pumping the background vacuum degree of the sputtering chamber to be less than 5 multiplied by 10Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the direct current sputtering current is 0.2-0.3A, and the sputtering time is 10-20 min.


说明书

【中文】

一种基于氧化铒薄膜的忆阻器件及其制备方法

技术领域

本发明属于半导体薄膜器件领域,具体涉及一种基于氧化铒薄膜的忆阻器件及其制备方法。

背景技术

随着信息科学的发展,电子信息产业也得到了飞速的发展。电子器件作为信息产业的基础,电子元器件不断的技术革新是促进信息科学技术迅猛发展的强大动力。同时,人们对电子器件性能的要求也越来越高,无疑的这是现代人们对科学界提出的挑战。忆阻器作为一种新型电子元器件以其独特的非易失性的电学特性和优越的性能而备受研究者广泛地关注。并且忆阻器被认为是下一代新概念存储器中最具有应用前景的候选者之一。

忆阻器,全称记忆电阻。在1965-1971年间,科学家们已经在部分二元氧化物薄膜制备的金属-氧化物-金属三明治结构中观测到了电流(I)-电压(V)滞后曲线,然而当时研究者对其现象认识只停留在表面上,更不清楚这样器件表现出来的性质和用途。随后最早提出忆阻器概念的人是华裔的科学家蔡少棠教授,时间是1971年,当时蔡教授在研究电压(v)、电流(i)、磁通量(φ)以及电荷量(q)等四个基本量之间的关系时,根据数学逻辑关系的完整性提出忆阻器的存在。直到2008年,惠普公司的研究人员Dmitri B.Strukov等研究者在实验上证明了忆阻器的存在,并且将其研究论文发表在2008年的《Nature》期刊上,题为《寻找下落不明的忆阻器》文章与蔡少棠教授在1971年发表的《忆阻器,下落不明的电路元件》遥相呼应。忆阻器是典型的“三明治”(MIM)结构,其上下电极之间的功能层一般采用能够发生电阻转变的阻变层材料。在一个外加电压脉冲信号的作用下,该器件的电阻能在高阻态(HRS)和低阻态(LRS)之间发生转换,从而实现“0”和“1”的存储。

自从2008年以来,忆阻器以其独特的优点,诸如器件的结构简单,高的存储密度,低的功耗,快的读写速度等优点备受研究者的青睐。世界各国科学家掀起了忆阻器的研究高潮,不仅对忆阻器的工作原理,对忆阻器的信息存储的时效性和以及读写次数,开关比率被一次次刷新。研究者开始寻找性能更优,廉价,环保,且益于获取的忆阻材料,同时有大量的文献报道了具有忆阻的材料和忆阻器的制备方法。制备忆阻器的方法有:真空溅射、气相沉积、分子束外延、热蒸发、旋涂、电沉积和水热法等常规的薄膜制备工艺制备。对于无机材料一般采用真空溅射的方法制备器件,因为真空溅射相对比较廉价,可以大规模化生产,且制备的薄膜厚度可控,均匀性良好等优点。对于有机薄膜的制备一般采用旋涂的技术制备薄膜。研究者根据大量的实验证实了忆阻效应不仅依赖于使用的功能层材料,而且还依赖器件的电极材料。尽管有关忆阻器的报道有很多,但是还有许多的基础工作尚未解决,如合成忆阻效应更为明显的材料和更先进的薄膜制备技术,同时,进一步明确忆阻随机存储器的电阻转变机理。近几年以来,忆阻存储器己成为材料学、信息科学和物理学领域新的研究方向。忆阻器的发现对电子科学的发展将产生非常大的影响,特别是对电阻随机存储器的发展具有里程碑的作用。虽然目前有很多关于忆阻器的研究,但是要实现忆阻随机存储器产业化,还有许多的基础问题需要解决,如探索更先进的薄膜制备工艺性能更加优异的存储材料,忆阻效应更为明显的器件结构。进一步阐明忆阻随机存储器的阻变机理。

发明内容

本发明的目的是解决上述问题,提供一种基于氧化铒薄膜的忆阻器件及其制备方法,该忆阻器是一种实现了电极材料对RRAM存储器正负存储窗口的可控调节的电子元件,该器件结构简单、性能优异、稳定、重复性好,在下一代新概念存储器件领域具有很好的应用前景。

为解决上述技术问题,本发明的技术方案是:一种基于氧化铒薄膜的忆阻器,包括顶电极、氧化铒薄膜以及底电极,所述氧化铒薄膜位于顶电极和底电极之间,其中,顶电极和底电极的材料分别为氧化铟锡或银,构成氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构。

上述技术方案中,所述氧化铒薄膜的厚度为300~500nm。所述顶电极氧化铟锡或银的厚度优选400~600nm,所述底电极氧化铟锡或银的厚度优选400~600nm。

值得说明的是,氧化铒相比其它材料具有较高的介电常数,较大的禁带宽度和良好的热稳定性,并且其在可见光谱范围内具有很高的透明度。在本发明中,功能层氧化铒薄膜的厚度为300~500nm,薄膜的厚度影响了Set和Reset电压,进一步决定了开关的记忆窗口的大小,当功能层的厚度为300~500nm时该器件具有较大的记忆窗口。不同的电极材料影响了功能层内部导电通道的形成方向,导电通道的形成方向和界面势垒的变化共同调控了开关的方向和存储窗口,其中导电通道形成方向主要影响存储器存储窗口的正负。在电场的作用下,电极材料中的活性离子进入功能层形成导电通道进而实现该器件的阻态转变。通常情况下,选用活性的金属Ag和惰性的ITO或FTO作为电极材料。

一种上述基于氧化铒薄膜的忆阻器的制备方法,包括以下步骤:

S1、清洗衬底:洗净基片并吹干,备用;

S2、制备底电极:采用磁控溅射法,以氧化铟锡(ITO)或银靶材(Ag)为溅射源,在基片上溅射沉积底电极;

S3、制备功能层:采用射频溅射法,以氧化铒靶材为溅射源,在底电极上沉积功能层Er2O3薄膜;

S4、沉积顶电极:采用直流溅射法,以氧化铟锡或银靶材为溅射源,在氧化铒薄膜表面沉积上电极,制得氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构的忆阻器。

上述技术方案中,所述步骤S1中,清洗的具体步骤是:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10~20min,吹干后备用。清洗的目的是为去除衬底表面的杂质,因此在达到清洗目的的前提下,也可采用本领域常规采用的其他清洗方式。所述基片为玻璃片或本领域常规使用的其他衬底。

上述技术方案中,所述步骤S2中,具体步骤是:在磁控溅射腔体中安装ITO靶材或Ag靶材,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min。

上述技术方案中,所述步骤S3中,靶基距为8~10厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,溅射功率为80~100W,溅射时间为20~30min。

上述技术方案中,所述步骤S4中,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min。

上述技术方案中,所述忆阻器件为银/氧化铒/氧化铟锡结构和氧化铟锡/氧化铒/银结构。

本发明的有益效果是:本发明提供的基于氧化铒薄膜的忆阻器件及其制备方法,该忆阻器件是一种电极材料对RRAM存储器正负存储窗口的可控调节的电子器件,该器件结构简单、性能优异、稳定、重复性好,在新型存储器、振荡器等电子器件领域具有很好的应用前景。

附图说明

图1是本发明实施例制得器件的电流-电压(I-V)特征曲线;

图2是本发明实施例制得器件的电阻-圈数(R-C)特征曲线;

图3是本发明实施例制得器件的电阻-时间(R-T)特征曲线。

具体实施方式

下面结合附图和具体实施例对本发明做进一步的说明:

本发明忆阻器件的制备方法,包括以下步骤:

S1、清洗衬底:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10-20min,基片吹干后放入磁控溅射腔体中;

S2、制备底电极:在磁控溅射腔体中安装底电极的溅射源,即ITO或Ag靶材,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min;

S3、制备功能层:采用射频溅射法,以Er2O3靶材为溅射源,设置靶基距为8~10厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,溅射功率为80~100W,溅射时间为20~30min,在底电极上沉积功能层Er2O3薄膜,其厚度是300~500nm;

S4、沉积顶电极:采用直流溅射法,以Ag或ITO靶材为溅射源,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min,在Er2O3薄膜表面沉积上电极,分别制备了结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag的器件。

图1是本发明实施例1制得结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag器件的电流-电压(I-V)特征曲线,即忆阻效应的表征图。测试在室温下进行,从图1中可以看出通过调换电极材料可以实现对RRAM存储器正负存储窗口的可控调节。

图2是本发明实施例1制得结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag器件的电阻-圈数(R-C)变化趋势。从图2中可知该开关具有相对优良的稳定特性。

图3是本发明实施例1制得器件的电阻-时间(R-T)变化趋势,表现出优异的耐久性能。

本领域的普通技术人员将会意识到,这里所述的实施例是为了帮助读者理解本发明的原理,应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。

【EN】

Memristor based on erbium oxide film and preparation method thereof

Technical Field

The invention belongs to the field of semiconductor thin film devices, and particularly relates to a memristor based on an erbium oxide thin film and a preparation method thereof.

Background

With the development of information science, the electronic information industry has also been rapidly developed. Electronic devices are the basis of the information industry, and continuous technological innovation of electronic components is a strong power for promoting rapid development of information science and technology. Meanwhile, the requirements of people on the performance of electronic devices are higher and higher, which is undoubtedly the challenge of modern people to the scientific field. Memristors are receiving wide attention from researchers as a new electronic component due to their unique non-volatile electrical characteristics and superior performance. And memristors are considered to be one of the most promising candidates for next generation new concept memories.

Memristors are all called memristors. In 1965-1971, scientists have observed current (I) -voltage (V) hysteresis curves in metal-oxide-metal sandwich structures prepared from partially binary oxide films, but at the time researchers only understood their phenomena to reside on the surface, and the properties and uses of such devices are less clear. The first person who presented the memristor concept later was professor zeugo, a scientist of chinese, mazeri, for 1971, when the professor zeugo presented the existence of a memristor based on the completeness of the mathematical logical relationship when studying the relationship between four basic quantities, voltage (v), current (i), magnetic flux (phi), and charge (q). Researchers such as dmitrii b strukov, researchers of hewlett packard company, have experimentally demonstrated the existence of memristors until 2008, and the research papers are published in the journal of Nature 2008, and the article entitled "finding unidentified dropping memristors" is in remote correspondence with the article of memristors, unidentified dropping circuit elements, published in 1971 by professor of begonia chu. Memristors are typically "sandwich" (MIM) structures, and a functional layer between upper and lower electrodes of the memristor is generally made of a resistive layer material capable of undergoing resistance transition. Under the action of an applied voltage pulse signal, the resistance of the device can be switched between a High Resistance State (HRS) and a Low Resistance State (LRS), so that the storage of '0' and '1' is realized.

Since 2008, memristors have been favored by researchers with their unique advantages, such as simple device structure, high memory density, low power consumption, fast read/write speed, and the like. Scientists in all countries in the world have raised the research climax of the memristor, and the on-off ratio is refreshed once for the working principle of the memristor, the timeliness of information storage and the read-write times of the memristor. Researchers begin to search for materials with better performance, low price, environmental protection and benefit for obtaining memristance, and meanwhile, a large number of documents report materials with memristance and preparation methods of memristors. The method for preparing the memristor comprises the following steps: vacuum sputtering, vapor deposition, molecular beam epitaxy, thermal evaporation, spin coating, electrodeposition, hydrothermal method and other conventional film preparation processes. The device is prepared from inorganic materials by a vacuum sputtering method, and the vacuum sputtering method is relatively cheap, so that the device can be produced in large scale, and the prepared film has the advantages of controllable thickness, good uniformity and the like. For the preparation of organic thin films, spin coating technology is generally adopted to prepare the thin films. Researchers have demonstrated from a number of experiments that the memristive effect depends not only on the functional layer material used, but also on the electrode material of the device. Although there are many reports on memristors, there are many fundamental works that are not solved, such as synthesizing materials with more obvious memristive effect and more advanced thin film preparation technology, and further defining the resistance transition mechanism of the memristive random access memory. In recent years, memristive memories have become a new direction of research in the fields of materials science, information science, and physics. The discovery of the memristor has a great influence on the development of electronic science, and particularly has a milestone effect on the development of a resistance random access memory. Although there are many researches on memristors at present, there are many fundamental problems to be solved for realizing the industrialization of memristive random access memories, such as the search of more advanced memory materials with more excellent thin film preparation process performance and the device structure with more obvious memristive effect. Further elucidating the resistance change mechanism of the memristor random access memory.

Disclosure of Invention

The invention aims to solve the problems and provides a memristor based on an erbium oxide film and a preparation method thereof.

In order to solve the technical problems, the technical scheme of the invention is as follows: the memristor based on the erbium oxide film comprises a top electrode, the erbium oxide film and a bottom electrode, wherein the erbium oxide film is located between the top electrode and the bottom electrode, materials of the top electrode and the bottom electrode are indium tin oxide or silver respectively, and an indium tin oxide or silver/erbium oxide/indium tin oxide or silver sandwich structure is formed.

In the technical scheme, the thickness of the erbium oxide film is 300-500 nm. The thickness of the top electrode indium tin oxide or silver is preferably 400-600 nm, and the thickness of the bottom electrode indium tin oxide or silver is preferably 400-600 nm.

It is worth noting that erbium oxide has a higher dielectric constant, a larger forbidden band width and good thermal stability than other materials, and it has a high transparency in the visible spectral range. In the invention, the thickness of the functional layer erbium oxide film is 300-500 nm, the Set and Reset voltages are influenced by the thickness of the film, the size of a memory window of the switch is further determined, and when the thickness of the functional layer is 300-500 nm, the device has a larger memory window. Different electrode materials influence the forming direction of a conductive channel in the functional layer, the forming direction of the conductive channel and the change of the interface potential barrier jointly regulate and control the direction of the switch and the storage window, and the forming direction of the conductive channel mainly influences the positive and negative of the storage window of the memory. Under the action of an electric field, active ions in the electrode material enter the functional layer to form a conductive channel, so that the resistance state of the device is converted. In general, active Ag metal and inert ITO or FTO are selected as electrode materials.

A preparation method of the memristor based on the erbium oxide film comprises the following steps:

s1, cleaning the substrate: cleaning and drying the substrate for later use;

s2, preparing a bottom electrode: sputtering and depositing a bottom electrode on a substrate by adopting a magnetron sputtering method and taking Indium Tin Oxide (ITO) or silver target material (Ag) as a sputtering source;

s3, preparing a functional layer: depositing a functional layer Er on the bottom electrode by using an erbium oxide target as a sputtering source by adopting a radio frequency sputtering method2O3A film;

s4, depositing a top electrode: and depositing an upper electrode on the surface of the erbium oxide film by adopting a direct current sputtering method and taking indium tin oxide or silver target material as a sputtering source to prepare the memristor with the indium tin oxide or silver/erbium oxide/indium tin oxide or silver sandwich structure.

In the above technical solution, in the step S1, the specific cleaning steps are: and sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively carrying out ultrasonic cleaning for 10-20min, and drying for later use. The purpose of cleaning is to remove impurities on the surface of the substrate, so that other cleaning methods conventionally used in the art can be adopted to achieve the purpose of cleaning. The substrate is a glass sheet or other substrate conventionally used in the art.

In the above technical solution, the stepsIn step S2, the specific steps are: installing an ITO target or an Ag target in a magnetron sputtering cavity, setting the distance between the target and a substrate to be 8-12 cm, and pumping the background vacuum degree of a sputtering chamber to be less than 5 multiplied by 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the direct current sputtering current is 0.2-0.3A, and the sputtering time is 10-20 min.

In the technical scheme, in the step S3, the target base distance is 8-10 cm, and the background vacuum degree of the sputtering chamber is pumped to be less than 5 multiplied by 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the sputtering power is 80-100W, and the sputtering time is 20-30 min.

In the above technical scheme, in the step S4, the distance from the target to the substrate is set to 8-12 cm, and the background vacuum degree of the sputtering chamber is pumped to be less than 5 × 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the direct current sputtering current is 0.2-0.3A, and the sputtering time is 10-20 min.

In the technical scheme, the memristor is of a silver/erbium oxide/indium tin oxide structure and an indium tin oxide/erbium oxide/silver structure.

The invention has the beneficial effects that: the memristor is an electronic device with electrode materials for controllably adjusting the positive and negative storage windows of an RRAM (resistive random access memory), is simple in structure, excellent in performance, stable and good in repeatability, and has a good application prospect in the field of electronic devices such as novel memories and oscillators.

Drawings

FIG. 1 is a graph of current-voltage (I-V) characteristics of a device made in accordance with an embodiment of the present invention;

FIG. 2 is a resistance-turns-number (R-C) characteristic curve of a device made in accordance with an embodiment of the present invention;

fig. 3 is a resistance-time (R-T) characteristic of a device made in accordance with an embodiment of the present invention.

Detailed Description

The invention is further described with reference to the following figures and specific embodiments:

the preparation method of the memristor comprises the following steps:

s1, cleaning the substrate: sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively ultrasonically cleaning for 10-20min, blow-drying the substrate, and putting the substrate into a magnetron sputtering cavity;

s2, preparing a bottom electrode: a sputtering source of a bottom electrode, namely an ITO or Ag target is arranged in the magnetron sputtering cavity, the distance from the target to the substrate is set to be 8-12 cm, and the background vacuum degree of the sputtering chamber is pumped to be less than 5 multiplied by 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, wherein the sputtering pressure is 1.0-2.0 Pa, the direct-current sputtering current is 0.2-0.3A, and the sputtering time is 10-20 min;

s3, preparing a functional layer: by radio frequency sputtering with Er2O3The target material is a sputtering source, the target base distance is set to be 8-10 cm, and the background vacuum degree of the sputtering chamber is pumped to be less than 5 multiplied by 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, sputtering at the pressure of 1.0-2.0 Pa, sputtering at the power of 80-100W for 20-30 min, and depositing a functional layer Er on the bottom electrode2O3A thin film having a thickness of 300 to 500 nm;

s4, depositing a top electrode: adopting a direct current sputtering method, taking an Ag or ITO target as a sputtering source, setting the distance between the target and a substrate to be 8-12 cm, and pumping the background vacuum degree of a sputtering chamber to be less than 5 multiplied by 10-4Pa, introducing argon with the purity of 99.999 percent as working gas, sputtering at the pressure of 1.0-2.0 Pa, direct current sputtering at the current of 0.2-0.3A for 10-20min, and adding Er2O3Depositing an upper electrode on the surface of the film to respectively prepare Ag/Er with the structure2O3ITO and ITO/Er2O3A device of/Ag.

FIG. 1 shows that Ag/Er with the structure obtained in example 1 of the present invention2O3ITO and ITO/Er2O3The current-voltage (I-V) characteristic curve of the/Ag device is a characterization diagram of the memristive effect. The test is carried out at room temperature, and it can be seen from fig. 1 that the positive and negative storage windows of the RRAM memory can be controllably adjusted by exchanging electrode materials.

FIG. 2 shows that Ag/Er with structure obtained in example 1 of the present invention2O3ITO and ITO/Er2O3Resistance-coil number (R-C) variation trend of/Ag device. It can be seen from fig. 2 that the switch has relatively excellent stability characteristics.

Fig. 3 is a graph showing the resistance-time (R-T) variation trend of the device manufactured in example 1 of the present invention, showing excellent endurance.

It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

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