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一种BZN/BTS异质结构介电调谐薄膜的制备方法 【EN】Preparation method of BZN/BTS heterostructure dielectric tuning film

申请(专利)号:CN201810267130.X国省代码:天津 12
申请(专利权)人:【中文】天津大学【EN】Tianjin University
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摘要:
【中文】本发明公开了一种BZN/BTS异质结构介电调谐薄膜的制备方法,先将BZN即Bi1.5Zn1.0Nb1.5O7靶材和BTS即BaSn0.15Ti0.85O3靶材与Pt/Ti/SiO2/Si衬底放入磁控溅射样品台上;系统的本底真空抽至1.0×10‑7‑1.0×10‑3Pa,加热衬底至400~700℃,使用Ar和O2作为溅射气体,溅射功率为50~200W,沉积得到BTS薄膜层,薄膜厚度为150nm‑800nm,然后在100‑2000Pa的氧气中原位退火5‑60min;再将制品于系统中进行BZN薄膜层沉积,薄膜厚度为20nm‑200nm,制得BZN/BTS异质结构介电调谐薄膜。本发明介电损耗低,调谐率高,且器件稳定性好,为电子通讯设备的开发和应用提供了优良的电子元器件基础。 【EN】The invention discloses a preparation method of a BZN/BTS heterostructure dielectric tuning film, which comprises the steps of firstly preparing BZN, namely Bi1.5Zn1.0Nb1.5O7Target and BTS namely BaSn0.15Ti0.85O3Target material and Pt/Ti/SiO2Putting the/Si substrate on a magnetron sputtering sample table; background vacuum of the system to 1.0X 10‑7‑1.0×10‑3Pa, heating the substrate to 400-700 ℃, using Ar and O2As sputtering gas, sputtering power is 50-200W, depositing to obtain a BTS thin film layer, the thickness of the BTS thin film is 150-800 nm, and then annealing in situ for 5-60min in oxygen of 100-2000 Pa; and then depositing the BZN thin film layer in the system, wherein the thickness of the film is 20nm-200nm, and preparing the BZN/BTS heterostructure dielectric tuning film. The invention has low dielectric loss, high tuning rate and good device stability, and provides a good electronic component foundation for the development and application of electronic communication equipment.

主权项:
【中文】1.一种BZN/BTS异质结构介电调谐薄膜的制备方法,具体步骤如下: (1)采用固相烧结法制备BZN即BiZnNbO靶材和BTS即BaSnTiO靶材; (2)将清洁干燥的Pt/Ti/SiO/Si衬底放入磁控溅射样品台上; (3)将磁控溅射系统的本底真空抽至1.0×10-1.0×10Pa,然后加热衬底至400~700℃; (4)在步骤(3)系统中,使用Ar和O作为溅射气体,溅射功率为50~200W,衬底和靶材距离为40-120cm,进行沉积得到BTS薄膜层,薄膜厚度为150nm-800nm;然后在100-2000Pa的氧气中原位退火5-60min ; (5)步骤(4)停止后,取出制品,并放置在脉冲激光沉积系统中进行BZN薄膜层沉积,本底真空抽至1.0×10-1.0×10Pa,然后加热衬底至400~700℃,氧压为3-30Pa,激光频率3-8Hz,激光能量200-600mJ,衬底和靶材距离为40-80cm,薄膜厚度为20nm-200nm,制得BZN/BTS异质结构介电调谐薄膜; (6)步骤(5)结束后,在BZN/BTS异质结构介电调谐薄膜上面利用掩膜版制备金属电极,进行介电调谐性能测试。 【EN】1. A preparation method of a BZN/BTS heterostructure dielectric tuning film comprises the following specific steps: (1) preparation of BZN Bi by solid phase sintering methodZnNbOTarget and BTS namely BaSnTiOA target material; (2) clean and dry Pt/Ti/SiOPutting the/Si substrate on a magnetron sputtering sample table; (3) the background vacuum of the magnetron sputtering system was pumped to 1.0×10-1.0×10Pa, and then heating the substrate to 400-700 ℃; (4) in the step (3) system, Ar and O are usedAs sputtering gas, sputtering power is 50-200W, the distance between the substrate and the target is 40-120cm, and deposition is carried out to obtain a BTS thin film layer, wherein the thickness of the BTS thin film is 150nm-800 nm; then annealing in situ for 5-60min in oxygen of 100-2000 Pa; (5) after the step (4) is stopped, taking out the product, placing the product in a pulsed laser deposition system for BZN film layer deposition, and vacuumizing the background to 1.0 multiplied by 10-1.0×10Pa, heating the substrate to 400-700 ℃, controlling the oxygen pressure to be 3-30Pa, the laser frequency to be 3-8Hz, the laser energy to be 200-600mJ, controlling the distance between the substrate and the target material to be 40-80cm and the thickness of the film to be 20-200 nm, and preparing the BZN/BTS heterostructure dielectric tuning film; (6) and (5) after the step (5) is finished, preparing a metal electrode on the BZN/BTS heterostructure dielectric tuning film by using a mask plate, and testing the dielectric tuning performance.


说明书

【中文】

一种BZN/BTS异质结构介电调谐薄膜的制备方法

技术领域

本发明属于一种以成分为特征的陶瓷组合物,特别涉及一种BZN/BTS异质结构薄膜 压控变容管及其制备方法。

背景技术

介电调谐薄膜在微波电压可调元器件领域有着广阔的应用前景,如电压可调滤波器、 变容管、谐振器和移相器等。由于其制备技术可与半导体集成电路技术相兼容,使得开发 研究集半导体大规模集成电路与铁电薄膜的铁电、压电、热释电、电光、非线形光学等诸多功能于一体的多功能电路、器件和系统成为可能,应用前景非常可观。钛酸锶钡(BST) 是目前最常被研究和应用的介电调谐薄膜材料,但是其介电损耗过高(>0.02),严重限制 了其更广泛的应用。因此,急需开发一种新型的高性能介电调谐薄膜材料。

钛锡酸钡(BaSn0.15Ti0.85O3,BTS)薄膜不但具备高的介电调谐率(>50%),而且其介电损耗相对于钛酸锶钡较低(~0.01)。但是该介电损耗仍然不能满足应用要求。最近Bi1.5Zn1.0Nb1.5O7(BZN)也开始步入研究者的视野,其具有较低的介电损耗(0.0006),且 具有一定的介电调谐特性。为了降低BTS介电调谐薄膜的介电损耗,我们尝试将BTS薄 膜表面上制备一层薄的BZN薄膜,从而获得BZN/BTS异质结构的介电调谐薄膜,并发现 在介电调谐率仍然保持较高水平,其损耗却大大降低。

发明内容

本发明的目的,是在现有技术的基础上,开发一种新型的高性能介电调谐薄膜材料, 提供一种BZN/BTS异质结构介电调谐薄膜的制备方法

本发明通过如下技术方案予以实现。

一种BZN/BTS异质结构介电调谐薄膜的制备方法,具体步骤如下:

(1)采用固相烧结法制备BZN即Bi1.5Zn1.0Nb1.5O7靶材和BTS即BaSn0.15Ti0.85O3靶材。

(2)将清洁干燥的Pt/Ti/SiO2/Si衬底放入磁控溅射样品台上;

(3)将磁控溅射系统的本底真空抽至1.0×10-7-1.0×10-3Pa,然后加热衬底至400~700℃;

(4)在步骤(3)系统中,使用Ar和O2作为溅射气体,溅射功率为50~200W,进 行沉积得到BTS薄膜层,衬底和靶材距离为40-120cm,薄膜厚度为150nm-800nm;然后 在100-2000Pa的氧气中原位退火5-60min。

(5)步骤(4)停止后,取出制品,并放置在脉冲激光沉积系统中进行BZN薄膜层 沉积,本底真空抽至1.0×10-7-1.0×10-3Pa,然后加热衬底至400~700℃,氧压为3-30Pa, 激光频率3-8Hz,激光能量200-600mJ,衬底和靶材距离为40-80cm,薄膜厚度为 20nm-200nm,制得BZN/BTS异质结构介电调谐薄膜;

(6)步骤(5)结束后,在BZN/BTS异质结构介电调谐薄膜上面利用掩膜版制备金 属电极,进行介电调谐性能测试。

所述步骤(1)Bi1.5Zn1.0Nb1.5O7薄膜,原料Bi2O3、ZnO和Nb2O5的质量纯度均在99% 以上;BaSn0.15Ti0.85O3薄膜,原料BaCO3、TiO2和SnO2的质量纯度均在99%以上。

所述步骤(4)和步骤(5的Ar和O2的纯度均在99.99%以上,磁控溅射系统中的氧气和氩气的分压比在1/15与1/4之间。

所述步骤(4)和步骤(5)沉积得到的薄膜层厚度通过调节工艺参数或者沉积时间来 控制。

所述步骤(6)的电极的制备方法为磁控溅射法或蒸镀法。

所制备的BZN/BTS异质结构介电调谐薄膜的介电调谐率≥50%@100KHz,介电损耗<0.01。

本发明公开的BZN/BTS异质结构介电调谐薄膜介电损耗低,调谐率高,且器件稳定性好,为电子通讯设备的开发和应用提供了优良的电子元器件基础。

附图说明

图1是BZN/BTS异质结构介电调谐薄膜的结构示意图;

图2是BZN/BTS异质结构介电调谐薄膜的介电性能(电场调谐和介电损耗)图谱。

图1中的附图标记如下:

1———金电极 2———为BZN薄膜层

3———BTS薄膜层 4———为铂金层

5———为钛层 6———SiO2

7———硅层

具体实施方式

下面结合具体实施例的阐述,进一步说明本发明的实质特点和显著的进步,应理解, 这些实施例仅用于说明本发明而不用于限制本发明的保护范围。

实施例1

(1)将烧制好的BaSn0.15Ti0.85O3靶材装置在磁控溅射靶头上,将Bi1.5Zn1.0Nb1.5O7靶材装在脉冲激光沉积靶头上。

(2)将Pt/Ti/SiO2/Si衬底清洗,以N2吹干并放入磁控溅射样品台上。

(3)将磁控溅射系统的本底真空抽至4.0×10-4Pa,然后加热衬底至650℃。

(4)以高纯(99.99%)Ar和O2作为溅射气体,氩气和氧气的流量比为17:3,溅射气压为1.0Pa,溅射功率为80W,衬底和靶材距离为60cm,进行沉积得到BTS薄膜,沉积 得到的薄膜厚度为210nm,可以通过调节工艺参数或者沉积时间控制薄膜厚度。然后在 1000Pa的氧气中原位退火20min。

(5)将(4)中制备好的BTS薄膜放置在脉冲激光沉积样品台上进行BZN薄膜沉积。本底真空抽至4.0×10-4Pa,然后加热衬底至650℃,氧压为10Pa,激光能量为300mJ,衬 底和靶材距离为60cm,频率为3Hz,沉积BZN薄膜厚度为50nm,制得BZN/BTS异质 结构介电调谐薄膜。

(6)步骤(5)结束后,通过热蒸镀在BZN/BTS异质薄膜表面利用掩膜版制备直径 为0.2mm的Au电极。

图1是BZN/BTS异质结构介电调谐薄膜的结构示意图。由上至下依次为金电极1,BZN薄膜层2,BTS薄膜层3,铂金层4,钛层5,SiO2层6,硅层7。(4、5、6、7组成 衬底)。

图2为BZN/BTS异质结构介电调谐薄膜的介电性能(电场调谐和介电损耗)图谱,可见在424kV/cm的偏置电场下调谐率为~52%,介电损耗为~0.005。

实施例2

(1)将烧制好的BaSn0.15Ti0.85O3靶材装置在磁控溅射靶头上,将Bi1.5Zn1.0Nb1.5O7靶材装在脉冲激光沉积靶头上。

(2)将Pt/Ti/SiO2/Si衬底清洗,以N2吹干并放入磁控溅射样品台上。

(3)将磁控溅射系统的本底真空抽至8.0×10-4Pa,然后加热衬底至700℃。

(4)以高纯(99.99%)Ar和O2作为溅射气体,氩气和氧气的流量比为17:2。溅射气压为2.0Pa,溅射功率为100W,衬底和靶材距离为50cm,进行沉积得到BTS薄膜,沉 积得到的薄膜厚度为400nm,可以通过调节工艺参数或者沉积时间控制薄膜厚度。然后在 1200Pa的氧气中原位退火30min。

(5)将(4)中制备好的BTS薄膜放置在脉冲激光沉积样品台上进行BZN薄膜沉积。本底真空抽至4.0×10-4Pa,然后加热衬底至650℃,氧压为15Pa,激光能量为300mJ,频 率为5Hz,衬底和靶材距离为60cm,沉积BZN薄膜厚度为80nm,制得BZN/BTS异质 结构介电调谐薄膜。

(6)步骤(5)结束后,通过热蒸镀在BZN/BTS异质薄膜表面利用掩膜版制备直径 为0.2mm的Au电极。

制备获得的BZN/BTS异质结构介电调谐薄膜在424kV/cm的偏置电场下调谐率为~55%,介电损耗为~0.008。

实施例3

(1)将烧制好的BaSn0.15Ti0.85O3靶材装置在磁控溅射靶头上,将Bi1.5Zn1.0Nb1.5O7靶材装在脉冲激光沉积靶头上。

(2)将Pt/Ti/SiO2/Si衬底清洗,以N2吹干并放入磁控溅射样品台上。

(3)将磁控溅射系统的本底真空抽至6.0×10-4Pa,然后加热衬底至500℃

(4)以高纯(99.99%)Ar和O2作为溅射气体,氩气和氧气的流量比为11:2。溅射气压为5.0Pa,溅射功率为120W,进行沉积得到BTS薄膜,衬底和靶材距离为70cm,沉 积得到的薄膜厚度为150nm,可以通过调节工艺参数或者沉积时间控制薄膜厚度。然后在 500Pa的氧气中原位退火10min

(5)将(4)中制备好的BTS薄膜放置在脉冲激光沉积样品台上进行BZN薄膜沉积。本底真空抽至4.0×10-4Pa,然后加热衬底至650℃,氧压为10Pa,激光能量为200mJ,频 率为3Hz,衬底和靶材距离为80cm,沉积BZN薄膜厚度为30nm,制得BZN/BTS异质 结构介电调谐薄膜。

(6)步骤(5)结束后,通过热蒸镀在BZN/BTS异质薄膜表面利用掩膜版制备直径 为0.2mm的Au电极。

制备获得的BZN/BTS异质结构介电调谐薄膜在424kV/cm的偏置电场下调谐率为~53%,介电损耗为~0.006。

实施例4

(1)将烧制好的BaSn0.15Ti0.85O3靶材装置在磁控溅射靶头上,将Bi1.5Zn1.0Nb1.5O7靶材装在脉冲激光沉积靶头上。

(2)将Pt/Ti/SiO2/Si衬底清洗,以N2吹干并放入磁控溅射样品台上。

(3)将磁控溅射系统的本底真空抽至4.0×10-4Pa,然后加热衬底至700℃。

(4)以高纯(99.99%)Ar和O2作为溅射气体,氩气和氧气的流量比为11:2。溅射气压为5.0Pa,溅射功率为120W,进行沉积得到BTS薄膜,衬底和靶材距离为40cm,沉 积得到的薄膜厚度为800nm,可以通过调节工艺参数或者沉积时间控制薄膜厚度。然后在 1500Pa的氧气中原位退火10min

(5)将(4)中制备好的BTS薄膜放置在脉冲激光沉积样品台上进行BZN薄膜沉积。本底真空抽至4.0×10-4Pa,然后加热衬底至650℃,氧压为20Pa,激光能量为500mJ,频 率为6Hz,衬底和靶材距离为200cm,沉积BZN薄膜厚度为200nm,制得BZN/BTS异 质结构介电调谐薄膜。

(6)步骤(5)结束后,通过热蒸镀在BZN/BTS异质薄膜表面利用掩膜版制备直径 为0.2mm的Au电极。

制备获得的BZN/BTS异质结构介电调谐薄膜在424kV/cm的偏置电场下调谐率为~50%,介电损耗为~0.005。

【EN】

Preparation method of BZN/BTS heterostructure dielectric tuning film

Technical Field

The invention belongs to a ceramic composition characterized by components, and particularly relates to a BZN/BTS heterostructure thin film voltage-controlled varactor and a preparation method thereof.

Background

The dielectric tuning film has wide application prospect in the field of microwave voltage adjustable components, such as voltage adjustable filters, variable capacitance tubes, resonators, phase shifters and the like. Because the preparation technology of the ferroelectric film is compatible with the semiconductor integrated circuit technology, the development and research of multifunctional circuits, devices and systems which integrate a plurality of functions of ferroelectric, piezoelectric, pyroelectric, electrooptical, nonlinear optics and the like of semiconductor large-scale integrated circuits and ferroelectric films are possible, and the application prospect is very considerable. Barium Strontium Titanate (BST) is currently the most commonly studied and used dielectric tuning thin film material, but its dielectric loss is too high (>0.02), severely limiting its broader application. Therefore, it is urgently needed to develop a new high-performance dielectric tuning thin film material.

Barium titanosilicate (BaSn)0.15Ti0.85O3BTS) film not only has high dielectric tuning rate>50%) and its dielectric loss is low (-0.01) relative to barium strontium titanate. But the dielectric loss still does not meet the application requirements. Recently Bi1.5Zn1.0Nb1.5O7(BZN) also began to step into the field of researchers, having low dielectric losses (0.0006) and having certain dielectric tuning characteristics. In order to reduce the dielectric loss of the BTS dielectric tuning film, an attempt is made to prepare a thin BZN film on the surface of the BTS film so as to obtain the dielectric tuning film of a BZN/BTS heterostructure, and the loss is greatly reduced while the dielectric tuning rate is still kept at a high level.

Disclosure of Invention

The invention aims to develop a novel high-performance dielectric tuning film material based on the prior art and provide a preparation method of a BZN/BTS heterostructure dielectric tuning film

The invention is realized by the following technical scheme.

A preparation method of a BZN/BTS heterostructure dielectric tuning film comprises the following specific steps:

(1) preparation of BZN Bi by solid phase sintering method1.5Zn1.0Nb1.5O7Target and BTS namely BaSn0.15Ti0.85O3A target material.

(2) Clean and dry Pt/Ti/SiO2Putting the/Si substrate on a magnetron sputtering sample table;

(3) vacuum pumping the background of the magnetron sputtering system to 1.0 x 10-7-1.0×10-3Pa, and then heating the substrate to 400-700 ℃;

(4) in the step (3) system, Ar and O are used2As sputtering gas, sputtering power is 50-200W, deposition is carried out to obtain a BTS thin film layer, the distance between a substrate and a target material is 40-120cm, and the thickness of the thin film is 150nm-800 nm; then annealing in-situ in oxygen of 100-2000Pa 5-60min。

(5) After the step (4) is stopped, taking out the product, placing the product in a pulsed laser deposition system for BZN film layer deposition, and vacuumizing the background to 1.0 multiplied by 10-7-1.0×10-3Pa, heating the substrate to 400-700 ℃, controlling the oxygen pressure to be 3-30Pa, the laser frequency to be 3-8Hz, the laser energy to be 200-600mJ, controlling the distance between the substrate and the target material to be 40-80cm and the thickness of the film to be 20-200 nm, and preparing the BZN/BTS heterostructure dielectric tuning film;

(6) and (5) after the step (5) is finished, preparing a metal electrode on the BZN/BTS heterostructure dielectric tuning film by using a mask plate, and testing the dielectric tuning performance.

The step (1) Bi1.5Zn1.0Nb1.5O7Film, raw material Bi2O3ZnO and Nb2O5The mass purity of the product is more than 99 percent; BaSn0.15Ti0.85O3Film, raw material BaCO3、TiO2And SnO2The mass purity of the product is more than 99 percent.

Ar and O of the step (4) and the step (5)2The purity of the alloy is more than 99.99 percent, and the partial pressure ratio of oxygen to argon in a magnetron sputtering system is between 1/15 and 1/4.

The thickness of the thin film layer obtained by deposition in the step (4) and the step (5) is controlled by adjusting process parameters or deposition time.

The preparation method of the electrode in the step (6) is a magnetron sputtering method or an evaporation method.

The dielectric tuning rate of the prepared BZN/BTS heterostructure dielectric tuning film is more than or equal to 50% @100KHz, and the dielectric loss is less than 0.01.

The BZN/BTS heterostructure dielectric tuning film disclosed by the invention is low in dielectric loss, high in tuning rate and good in device stability, and provides a good electronic component foundation for development and application of electronic communication equipment.

Drawings

FIG. 1 is a schematic structural diagram of a BZN/BTS heterostructure dielectric tuning film;

FIG. 2 is a graph of the dielectric properties (electric field tuning and dielectric loss) of a BZN/BTS heterostructure dielectric tuning film.

The reference numerals in fig. 1 are as follows:

1-gold electrode 2-BZN thin film layer

3-BTS thin film layer 4-platinum layer

5-titanium layer 6-SiO2Layer(s)

7-silicon layer

Detailed Description

The essential features and the significant advantages of the present invention will be further explained below with reference to the following description of specific examples, which are to be understood as merely illustrative of the present invention and not as limiting the scope of the invention.

Example 1

(1) The sintered BaSn0.15Ti0.85O3The target material is arranged on a magnetron sputtering target head, and Bi is added1.5Zn1.0Nb1.5O7The target material is arranged on a pulse laser deposition target head.

(2) Mixing Pt/Ti/SiO2Cleaning of the/Si substrate with N2Dried by blowing and placed on a magnetron sputtering sample table.

(3) The background of the magnetron sputtering system is vacuumized to 4.0 x 10-4Pa, and then heating the substrate to 650 ℃.

(4) With high purity (99.99%) Ar and O2As sputtering gas, the flow ratio of argon to oxygen is 17:3, the sputtering pressure is 1.0Pa, the sputtering power is 80W, the distance between the substrate and the target is 60cm, the BTS thin film is obtained by deposition, the thickness of the deposited thin film is 210nm, and the thickness of the thin film can be controlled by adjusting process parameters or deposition time. Then annealing in situ in oxygen at 1000Pa for 20 min.

(5) And (4) placing the BTS thin film prepared in the step (4) on a pulsed laser deposition sample table for BZN thin film deposition. Vacuum pumping to 4.0 × 10-4Pa, heating the substrate to 650 ℃, setting the oxygen pressure to 10Pa, setting the laser energy to 300mJ, setting the distance between the substrate and the target material to be 60cm, setting the frequency to be 3Hz, and setting the thickness of the deposited BZN film to be 50nm to prepare the BZN/BTS heterostructure dielectric tuning film.

(6) And (5) after the step (5) is finished, preparing an Au electrode with the diameter of 0.2mm on the surface of the BZN/BTS heterogeneous film by thermal evaporation and utilizing a mask.

FIG. 1 is a schematic diagram of the structure of a BZN/BTS heterostructure dielectric tuning film. From top to bottom, the gold electrode 1, the BZN thin film layer 2, the BTS thin film layer 3, the platinum layer 4, the titanium layer 5 and the SiO layer are arranged in sequence2Layer 6, silicon layer 7. (4, 5, 6, 7 constitute the substrate).

FIG. 2 is a graph of dielectric properties (electric field tuning and dielectric loss) of a BZN/BTS heterostructure dielectric tuning film, showing that the tuning rate is-52% and the dielectric loss is-0.005% under a bias electric field of 424 kV/cm.

Example 2

(1) The sintered BaSn0.15Ti0.85O3The target material is arranged on a magnetron sputtering target head, and Bi is added1.5Zn1.0Nb1.5O7The target material is arranged on a pulse laser deposition target head.

(2) Mixing Pt/Ti/SiO2Cleaning of the/Si substrate with N2Dried by blowing and placed on a magnetron sputtering sample table.

(3) Vacuum pumping the background of the magnetron sputtering system to 8.0 x 10-4Pa and then the substrate was heated to 700 ℃.

(4) With high purity (99.99%) Ar and O2As the sputtering gas, the flow ratio of argon gas and oxygen gas was 17: 2. The sputtering pressure is 2.0Pa, the sputtering power is 100W, the distance between the substrate and the target material is 50cm, the BTS thin film is obtained by deposition, the thickness of the thin film obtained by deposition is 400nm, and the thickness of the thin film can be controlled by adjusting the process parameters or the deposition time. Then annealing in situ in 1200Pa oxygen for 30 min.

(5) And (4) placing the BTS thin film prepared in the step (4) on a pulsed laser deposition sample table for BZN thin film deposition. Vacuum pumping to 4.0 × 10-4Pa, then heating the substrate to 650 ℃, the oxygen pressure is 15Pa, the laser energy is 300mJ, the frequency is 5Hz, the distance between the substrate and the target material is 60cm, and the thickness of the deposited BZN film is 80nm, thus obtaining the BZN/BTS heterostructure dielectric tuning film.

(6) And (5) after the step (5) is finished, preparing an Au electrode with the diameter of 0.2mm on the surface of the BZN/BTS heterogeneous film by thermal evaporation and utilizing a mask.

The dielectric tuning film of the BZN/BTS heterostructure prepared by the method has a tuning rate of 55 percent and dielectric loss of 0.008 percent under a bias electric field of 424 kV/cm.

Example 3

(1) The sintered BaSn0.15Ti0.85O3The target material is arranged on a magnetron sputtering target head, and Bi is added1.5Zn1.0Nb1.5O7The target material is arranged on a pulse laser deposition target head.

(2) Mixing Pt/Ti/SiO2Cleaning of the/Si substrate with N2Dried by blowing and placed on a magnetron sputtering sample table.

(3) The background of the magnetron sputtering system is vacuumized to 6.0 x 10-4Pa, and then heating the substrate to 500 deg.C

(4) With high purity (99.99%) Ar and O2As the sputtering gas, the flow ratio of argon gas and oxygen gas was 11: 2. The sputtering pressure is 5.0Pa, the sputtering power is 120W, the BTS film is obtained by deposition, the distance between the substrate and the target material is 70cm, the thickness of the film obtained by deposition is 150nm, and the thickness of the film can be controlled by adjusting the process parameters or the deposition time. Then annealing in situ in oxygen of 500Pa for 10min

(5) And (4) placing the BTS thin film prepared in the step (4) on a pulsed laser deposition sample table for BZN thin film deposition. Vacuum pumping to 4.0 × 10-4Pa, then heating the substrate to 650 ℃, the oxygen pressure is 10Pa, the laser energy is 200mJ, the frequency is 3Hz, the distance between the substrate and the target material is 80cm, and the thickness of the deposited BZN film is 30nm, thus obtaining the BZN/BTS heterostructure dielectric tuning film.

(6) And (5) after the step (5) is finished, preparing an Au electrode with the diameter of 0.2mm on the surface of the BZN/BTS heterogeneous film by thermal evaporation and utilizing a mask.

The tuning rate of the prepared BZN/BTS heterostructure dielectric tuning film under a bias electric field of 424kV/cm is 53 percent, and the dielectric loss is 0.006 percent.

Example 4

(1) The sintered BaSn0.15Ti0.85O3The target material is arranged on a magnetron sputtering target headAdding Bi1.5Zn1.0Nb1.5O7The target material is arranged on a pulse laser deposition target head.

(2) Mixing Pt/Ti/SiO2Cleaning of the/Si substrate with N2Dried by blowing and placed on a magnetron sputtering sample table.

(3) The background of the magnetron sputtering system is vacuumized to 4.0 x 10-4Pa and then the substrate was heated to 700 ℃.

(4) With high purity (99.99%) Ar and O2As the sputtering gas, the flow ratio of argon gas and oxygen gas was 11: 2. The sputtering pressure is 5.0Pa, the sputtering power is 120W, the BTS film is obtained by deposition, the distance between the substrate and the target material is 40cm, the thickness of the film obtained by deposition is 800nm, and the thickness of the film can be controlled by adjusting the process parameters or the deposition time. Then annealing in situ in 1500Pa oxygen for 10min

(5) And (4) placing the BTS thin film prepared in the step (4) on a pulsed laser deposition sample table for BZN thin film deposition. Vacuum pumping to 4.0 × 10-4Pa, heating the substrate to 650 ℃, controlling the oxygen pressure to be 20Pa, controlling the laser energy to be 500mJ, controlling the frequency to be 6Hz, controlling the distance between the substrate and the target material to be 200cm, and depositing the BZN film with the thickness of 200nm to obtain the BZN/BTS heterogeneous structure dielectric tuning film.

(6) And (5) after the step (5) is finished, preparing an Au electrode with the diameter of 0.2mm on the surface of the BZN/BTS heterogeneous film by thermal evaporation and utilizing a mask.

The dielectric tuning film of the BZN/BTS heterostructure prepared by the method has the tuning rate of 50 percent and the dielectric loss of 0.005 percent under a bias electric field of 424 kV/cm.

图1
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