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中国 发明授权 有效

可不开腔清洁阳极罩的磁控溅射装置及清洁方法 【EN】It can keep mum and clean the magnetic control sputtering device and clean method of anode cap

申请(专利)号:CN201710347518.6国省代码:湖南 43
申请(专利权)人:【中文】中国电子科技集团公司第四十八研究所【EN】No.48 Inst. China Electronics Tech Group
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摘要:
【中文】可不开腔清洁阳极罩的磁控溅射装置,包括腔体、靶材及设于腔体上的磁控靶和磁控靶挡板,腔体外侧设有第一接头、第二接头及升降机构,第一接头与腔体之间设有绝缘件,第二接头与腔体连通,升降机构与磁控靶挡板连接,磁控靶电源阳极与腔体连通,磁控靶挡板与腔体连通,靶材通过第一导线与磁控靶电源阴极连通,磁控靶的阳极罩通过第二导线与第一接头连通。清洁方法,S1调整磁控靶挡板位置,使磁控靶挡板与磁控靶的阳极罩之间可进行辉光溅射;第一导线连接至第一接头;S2磁控靶电源在磁控靶挡板与阳极罩之间施加电压,腔体中充入工艺气体,磁控靶挡板与阳极罩之间产生辉光溅射。本发明结构简单、可靠,能够不打开腔体清洁阳极罩上薄膜。 【EN】Paragraph:It can keep mum and clean the magnetic control sputtering device of anode cap, including cavity, target and magnetic control target and magnetic control target baffle on cavity, the first connector, the second connector and elevating mechanism are equipped on the outside of cavity, insulating part is equipped between first connector and cavity, second connector is connected to cavity, elevating mechanism is connect with magnetic control target baffle, magnetic control target power anode is connected to cavity, magnetic control target baffle is connected to cavity, target is connected to by the first conducting wire with magnetic control target power cathode, and the anode cap of magnetic control target passes through the second conducting wire and the first fittings.Clean method, S1 adjust magnetic control target baffle position, make that glow discharge sputtering can be carried out between magnetic control target baffle and the anode cap of magnetic control target;First conducting wire is connected to the first connector;S2 magnetic control target power supply applies voltage between magnetic control target baffle and anode cap, and process gas is filled in cavity, generates glow discharge sputtering between magnetic control target baffle and anode cap.It is the configuration of the present invention is simple, reliable, film on cavity cleaning anode cap can not be opened.Image:201710347518.GIF

主权项:
【中文】1.一种可不开腔清洁阳极罩的磁控溅射装置,包括腔体(101)、靶材(206)、以及安装于腔体(101)上的磁控靶(20)和旋转式的磁控靶挡板(106),其特征在于:所述腔体(101)外侧设有第一接头(304)、第二接头(308)及升降机构(301),所述第一接头(304)与所述腔体(101)之间设有绝缘件(305),所述第二接头(308)与所述腔体(101)连通,所述升降机构(301)与所述磁控靶挡板(106)连接,所述磁控靶(20)电源的阳极与所述腔体(101)连通,所述磁控靶挡板(106)与所述腔体(101)连通,所述靶材(206)通过第一导线(109)与所述磁控靶(20)电源的阴极连通,所述磁控靶(20)的阳极罩(203)通过第二导线(306)与所述第一接头(304)连通,所述磁控靶(20)包括固定座(201)和绝缘块(202),所述固定座(201)套设于所述绝缘块(202)上部外侧,所述阳极罩(203)套设于所述绝缘块(202)下部外侧,所述绝缘块(202)底部由内至外依次设有磁轭(211)、冷却罩(205)及阴极罩(204),所述阳极罩(203)位于所述阴极罩(204)外侧,所述磁轭(211)下部设有极性相反的磁铁(208),所述阴极罩(204)将所述靶材(206)压紧于所述冷却罩(205)下方,所述第一导线(109)与所述冷却罩(205)连通。 【EN】1. one kind, which can keep mum, cleans the magnetic control sputtering device of anode cap, including cavity (101), target (206) and it is installed on Magnetic control target (20) and revolving magnetic control target baffle (106) on cavity (101), it is characterised in that: on the outside of the cavity (101) Equipped with the first connector (304), the second connector (308) and elevating mechanism (301), first connector (304) and the cavity (101) insulating part (305) are equipped between, second connector (308) is connected to the cavity (101), the elevating mechanism (301) it is connect with the magnetic control target baffle (106), the anode of magnetic control target (20) power supply is connected to the cavity (101), institute It states magnetic control target baffle (106) to be connected to the cavity (101), the target (206) passes through the first conducting wire (109) and the magnetic control The cathode of target (20) power supply is connected to, and the anode cap (203) of the magnetic control target (20) is connect by the second conducting wire (306) with described first Head (304) connection, the magnetic control target (20) includes fixing seat (201) and collets (202), and the fixing seat (201) is sheathed on Collets (202) upper outside, the anode cap (203) are sheathed on the collets (202) lower outside, the insulation Block (202) bottom is successively arranged magnetic yoke (211), cooling dome (205) and cathode shield (204), the anode cap (203) from the inside to the outside On the outside of the cathode shield (204), magnetic yoke (211) lower part is equipped with opposite polarity magnet (208), the cathode shield (204) target (206) is pressed in below the cooling dome (205), first conducting wire (109) and the cooling dome (205) it is connected to.


说明书

【中文】

可不开腔清洁阳极罩的磁控溅射装置及清洁方法

技术领域

本发明涉及磁控溅射镀膜技术,尤其涉及一种可不开腔清洁阳极罩的磁控溅射装置及清洁方法。

背景技术

在半导体元器件等制造过程中,在基片上形成金属或氧化薄膜的工序是必不可少的。在这些工序中采用了基于溅射装置的成膜方法,如离子束溅射镀膜、磁控溅射镀膜等。磁控溅射镀膜是在真空腔室内,利用磁场与电场交互作用,使电子在靶材表面附近呈螺旋状运行,电子在飞向基片的过程中与惰性气体原子发生碰撞,使惰性气体原子电离产生正离子,正离子撞击靶材表面,靶材表面的原子吸收正离子的动能而脱离原晶格束缚,飞向基片并在基片上沉积形成薄膜。

已知的一种磁控溅射装置如附图1所示,包括:腔体101(金属材质),腔体101内底板装有工件台102,工件台102通过腔体101外的旋转电机(图中未出示)驱动旋转,速度可控。基片103放置于工件台102上,可跟随工件台102旋转。基片挡板105在基片103上方,基片挡板105通过旋转气缸(图中未示出)驱动旋转,基片挡板105用于防止杂质掉落于基片镀膜表面从而污染基片103,基片103镀膜时将基片挡板105旋转离开基片103上方。腔体101顶部安装有磁控靶20,磁控靶20的外壳为金属阳极罩203,阳极罩203与腔体101之间构成电气通路,电场激发的电子最终通过阳极罩203经腔体101回到磁控靶电源(图中未示出)。206为金属靶材,位于磁控靶20底部,为基片103镀膜提供金属原子。磁控靶20在工作时产生大量的热,需要通过冷却液将热量带走。靶材206上表面紧靠磁控靶20的冷却罩205,冷却罩205用于将冷却液密封在磁控靶20内,冷却罩205是导热良好的金属材料,磁控靶20内的磁场由两块相反极性(S,N)的磁铁(图中未示出)组成,磁铁浸泡在冷却液中。磁控靶挡板106安装于腔体101顶部,通过腔体101上方的旋转气缸108进行旋转动作,在磁控靶20进行预溅射时,磁控靶挡板106旋转到靶下方防止靶材206原子溅射到基片103,同时在磁控靶20不溅射时防止靶材206污染。导线109一端连接到金属冷却罩205,为靶材206提供阴极电压,导线109另一端连接磁控靶电源(图中未示出)。

根据磁控溅射的特点,在磁控靶20工作时,靶材206一部分原子会落在阳极罩203上形成薄膜,长时间工作后阳极罩203上的薄膜会掉落到基片103上,同时阳极罩203上的薄膜还可能与靶材206接触造成短路。

发明内容

本发明要解决的技术问题是克服现有技术的不足,提供一种结构简单、可靠,能够在不打开腔体的情况下清洁阳极罩上薄膜的磁控溅射装置。

本发明进一步提供一种该磁控溅射装置的清洁方法。

为解决上述技术问题,本发明采用以下技术方案:

一种可不开腔清洁阳极罩的磁控溅射装置,包括腔体、靶材、以及安装于腔体上的磁控靶和旋转式的磁控靶挡板,所述腔体外侧设有第一接头、第二接头及升降机构,所述第一接头与所述腔体之间设有绝缘件,所述第二接头与所述腔体连通,所述升降机构与所述磁控靶挡板连接,所述磁控靶电源的阳极与所述腔体连通,所述磁控靶挡板与所述腔体连通,所述靶材通过第一导线与所述磁控靶电源的阴极连通,所述磁控靶的阳极罩通过第二导线与所述第一接头连通。

作为上述技术方案的进一步改进:

所述磁控靶包括固定座和绝缘块,所述固定座套设于所述绝缘块上部外侧,所述阳极罩套设于所述绝缘块下部外侧。

所述绝缘块底部由内至外依次设有磁轭、冷却罩及阴极罩,所述阳极罩位于所述阴极罩外侧,所述磁轭下部设有极性相反的磁铁,所述阴极罩将所述靶材压紧于所述冷却罩下方,所述第一导线与所述冷却罩连通。

所述磁控靶挡板通过磁流体密封部件引出至所述腔体外,所述腔体外对应设有用于驱动磁控靶挡板旋转的旋转气缸,所述升降机构与所述旋转气缸连接。

一种上述可不开腔清洁阳极罩的磁控溅射装置的清洁方法,包括以下步骤:

S1、清洁准备:通过旋转运动和升降运动调整磁控靶挡板的位置,使磁控靶挡板与磁控靶的阳极罩之间可进行辉光溅射;第一导线连接至第一接头使阳极罩与磁控靶电源的阴极构成通路;

S2、清洁:磁控靶电源在磁控靶挡板与阳极罩之间施加电压,腔体中充入工艺气体,磁控靶挡板与阳极罩之间产生辉光溅射,将阳极罩上的镀层原子溅出。

与现有技术相比,本发明的优点在于:本发明公开的可不开腔清洁阳极罩的磁控溅射装置,在腔体外设置有第一接头、第二接头及升降机构,第一接头与腔体之间设有绝缘件,第二接头与腔体连通,升降机构与磁控靶挡板连接,实现磁控靶挡板在腔体内的升降,从而调整磁控靶挡板与阳极罩之间的距离,磁控靶电源的阳极与腔体连通,磁控靶挡板与腔体连通,可在磁控靶挡板上施加电压,靶材通过第一导线与磁控靶电源的阴极连通,磁控靶的阳极罩通过第二导线与第一接头连通,使阳极罩与腔体之间保持绝缘,结构简单、可靠。需要清洁阳极罩时,通过旋转运动和升降运动调整磁控靶挡板的位置,将第一导线连接至第一接头使阳极罩与磁控靶电源的阴极构成通路,然后磁控靶电源在磁控靶挡板与阳极罩之间施加电压,腔体中充入工艺气体,磁控靶挡板与阳极罩之间便可产生辉光溅射,即可在不打开腔体的情况下将阳极罩上的镀层原子溅出。

本发明公开的清洗方法,通过第一接头、第二接头、第一导线、第二导线连通方式的改变,配合磁控靶挡板位置的调整,即可实现在不打开腔体的情况下将阳极罩上的镀层原子溅出,步骤简单,操作方便。

附图说明

图1是现有的磁控溅射装置的结构示意图。

图2是本发明可不开腔清洁阳极罩的磁控溅射装置镀膜时的结构示意图。

图3是本发明可不开腔清洁阳极罩的磁控溅射装置清洗时的结构示意图。

图4是本发明中的磁控靶的结构示意图。

图5是本发明清洁方法的流程图。

图中各标号表示:101、腔体;102、工件台;103、基片;104、加热装置;105、基片挡板;106、磁控靶挡板;109、第一导线;20、磁控靶;201、固定座;202、绝缘块;203、阳极罩;204、阴极罩;205、冷却罩;206、靶材;208、磁铁;211、磁轭;301、升降机构;302、旋转气缸;304、第一接头;305、绝缘件;306、第二导线;307、磁流体密封部件;308、第二接头;309、连接导线。

具体实施方式

以下结合说明书附图和具体实施例对本发明作进一步详细说明。

如图2至图4所示,本实施例的可不开腔清洁阳极罩的磁控溅射装置,包括腔体101、靶材206、以及安装于腔体101上的磁控靶20和旋转式的磁控靶挡板106,腔体101外侧设有第一接头304、第二接头308及升降机构301,第一接头304与腔体101之间设有绝缘件305,第二接头308与腔体101连通,升降机构301与磁控靶挡板106连接,磁控靶20电源的阳极与腔体101连通,磁控靶挡板106与腔体101连通,靶材206通过第一导线109与磁控靶20电源的阴极连通,磁控靶20的阳极罩203通过第二导线306与第一接头304连通。

该可不开腔清洁阳极罩的磁控溅射装置,在腔体101外设置有第一接头304、第二接头308及升降机构301,第一接头304与腔体101之间设有绝缘件305,第二接头308与腔体101连通,升降机构301与磁控靶挡板106连接,实现磁控靶挡板106在腔体101内的升降,从而调整磁控靶挡板106与阳极罩203之间的距离,磁控靶20电源的阳极与腔体101连通,磁控靶挡板106与腔体101连通,可在磁控靶挡板106上施加电压,靶材206通过第一导线109与磁控靶20电源的阴极连通,磁控靶20的阳极罩203通过第二导线306与第一接头304连通,使阳极罩203与腔体101之间保持绝缘,结构简单、可靠。需要清洁阳极罩203时,通过旋转运动和升降运动调整磁控靶挡板106的位置,将第一导线109连接至第一接头304使阳极罩203与磁控靶20电源的阴极构成通路,然后磁控靶20电源在磁控靶挡板106与阳极罩203之间施加电压,腔体101中充入工艺气体,磁控靶挡板106与阳极罩203之间便可产生辉光溅射,即可在不打开腔体的情况下将阳极罩203上的镀层原子溅出。

作为进一步优选的技术方案,磁控靶20包括固定座201和凸字型的绝缘块202,固定座201套设于绝缘块202上部外侧,阳极罩203套设于绝缘块202下部外侧,可有效避免阳极罩203通过固定座201直接与腔体101导通。

本实施例的可不开腔清洁阳极罩的磁控溅射装置的详细结构:包括:腔体101,为不锈钢材料,腔体101内底板装有工件台102,工件台102通过腔体101外的旋转电机(图中未示出)驱动旋转,速度0r/min~40r/min可控。基片103置于工件台102上方,可跟随工件台102同步旋转。工件台102下方安装有加热装置104,可对基片103进行0℃~400℃加热。基片挡板105在基片103上方,基片挡板105采用型号为104的不锈钢材料,通过旋转气缸(图中未示出,与磁控靶挡板106配备的旋转气缸302相同)旋转,基片挡板105用于防止杂质掉落于基片103镀膜表面从而污染基片103,基片103镀膜时将基片挡板105旋转离开基片103上方。

腔室101顶部安装有圆柱形的磁控靶20,固定座201构成磁控靶20的不锈钢外壳。靶材206为金属靶材,位于磁控靶20底部,为基片103镀膜提供金属原子。不锈钢阴极罩204将靶材206紧紧压在冷却罩205上,冷却罩205用于将冷却液密封在磁控靶20内,冷却罩205是导热良好的金属材料,一般选用金属铜。冷却罩205与绝缘块202构成密封腔室,磁控靶20内的磁场由密封腔室两块极性相反(S和N)的磁铁208组成,磁铁208浸泡在冷却液中。磁铁208固定在磁轭211的下方,磁轭211固定在绝缘体202下方。阳极罩203为不锈钢材质,阳极罩203通过第二导线306与腔体101上的第一接头304连接,第一接头304与腔室101之间通过绝缘件305绝缘。第二接头308固定在腔体101上,且与腔体101导通。

磁控靶20的一侧装有磁控靶挡板106,磁控靶挡板106通过磁流体密封部件307引到腔体101外,旋转气缸302位于磁流体密封部件307上方,并固定在滑动式的升降机构301上,升降机构301可以驱动旋转气缸302及磁控靶挡板106升降,旋转气缸302可以带动磁控靶挡板106旋转,磁控靶挡板106为导体。第一导线109连接到金属冷却罩205,为靶材206提供阴极电压,第一导线109另一端连接至磁控靶电源(图中未示出)。

本实施例的可不开腔清洁阳极罩的磁控溅射装置的清洁方法,包括以下步骤:

S1、清洁准备:通过旋转运动和升降运动调整磁控靶挡板106的位置,使磁控靶挡板106与磁控靶20的阳极罩203之间可进行辉光溅射;第一导线109连接至第一接头304使阳极罩203与磁控靶20电源的阴极构成通路;

S2、清洁:磁控靶20电源在磁控靶挡板106与阳极罩203之间施加电压,腔体101中充入工艺气体,磁控靶挡板106与阳极罩203之间产生辉光溅射,将阳极罩203上的镀层原子溅出。

该清洗方法,通过第一接头304、第二接头308、第一导线109、第二导线306连通方式的改变,配合磁控靶挡板106位置的调整,即可实现在不打开腔体的情况下将阳极罩203上的镀层原子溅出,步骤简单,操作方便。需要说明的是,步骤S1清洁准备中,磁控靶挡板106的旋转运动、升降运动、以及第一导线109连接至第一接头304的各分步骤并无先后要求。

本发明可不开腔清洁阳极罩的磁控溅射装置的具体磁控溅射镀膜工作原理如下:

将第一接头304与第二接头308通过连接导线309短接,即阳极罩203与腔体101短路,磁控靶电源(图中未示出)的阳极与腔体101连接,磁控靶电源(图中未示出)的阴极通过第一电线109连接到冷却罩205,紧密接触的冷却罩205与靶材206是导通的。

基片103置于工件台102上,基片挡板105旋转离开基片103上方。通过升降机构301将磁控靶挡板106下移至距离阴极罩204下方(8mm到12mm,保证靶挡板106能不受干涉地旋转),通过旋转气缸302旋转磁控靶挡板106离开靶材206的下方。在阳极罩203与冷却罩205之间施加的电压(10V到1000V,优选为300V到500V),充入工艺气体Ar,设定腔体101内的压力(0.001Pa到10Pa,优选为0.1Pa到2Pa),工艺气体在高电压的作用下电离,电离出的电子在磁场的作用下螺旋运动多次撞击Ar使之电离后,最终落到阳极罩203,同时Ar+加速撞击靶材206,将靶材206的原子溅出、沉积在基片103上。

如需要预溅射,只需通过升降机构301将磁控靶挡板106下移,保证磁控靶20能起弧的距离,磁控靶挡板106在靶材206的下方,基片挡板105在基片103的上方。然后进行上述的过程即可预溅射。

本发明可不开腔清洁阳极罩的磁控溅射装置的具体清洁工作原理如下:

磁控靶电源(图中未示出)的阳极与腔体101连接,由于磁控靶挡板106与腔体101构成通路,即磁控靶电源阳极与磁控靶挡板106构成通路。断开第一接头304与第二接头308的连接导线309,同时将连接到磁控靶电源阴极的第一导线109连接到第一接头304上,这样阳极罩203通过第二导线306与磁控靶阴极构成通路。

通过旋转气缸302旋转磁控靶挡板106到靶材206的下方,通过升降机构301将磁控靶挡板106上移,离阴极罩204为小于2mm,磁控靶挡板106作为阳极罩203的阳极,同时磁控靶挡板106还可防止对阳极罩303溅射出来的原子沉积到靶材206上,从而避免污染靶材206。在阳极罩203与磁控靶挡板106之间施加电压(10V到1000V,优选为300V到500V),充入工艺气体Ar,设定腔体101内的压力(0.001Pa到10Pa,优选为0.1Pa到2Pa),工艺气体在高电压的作用下电离,电离出的电子在磁场的作用下螺旋运动多次撞击Ar使之电离后,最终落到磁控靶挡板106,同时Ar+加速撞击阳极罩203表面,将阳极罩203的镀层原子溅出,从而实现对阳极罩203的清洁功能。

虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明技术方案范围的情况下,都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均应落在本发明技术方案保护的范围内。

【EN】

It can keep mum and clean the magnetic control sputtering device and clean method of anode cap

Technical field

The present invention relates to magnetron sputtering technologies, more particularly to a kind of can keep mum to clean the magnetron sputtering dress of anode cap

It sets and clean method.

Background technique

In the manufacturing processes such as semiconductor components and devices, it is essential for forming metal or the process of oxide film on substrate

's.The film build method based on sputtering equipment, such as ion beam sputtering deposition, magnetron sputtering plating are used in these processes.

Magnetron sputtering plating be in vacuum chamber, using magnetic field and electric field reciprocation, make electronics near target material surface helically

Shape operation, electronics collide during flying to substrate with intert-gas atoms, generate intert-gas atoms ionization just

Ion, positive ion bombardment target material surface, the kinetic energy of the Atomic absorption cation of target material surface and be detached from the constraint of former lattice, fly to base

Piece simultaneously forms film in deposition on substrate.

A kind of known magnetic control sputtering device is as shown in Fig. 1, comprising: cavity 101(metal material), bottom in cavity 101

Plate is equipped with work stage 102, and work stage 102 drives rotation by the rotating electric machine (not showing in figure) outside cavity 101, and speed can

Control.Substrate 103 is placed in work stage 102, and work stage 102 can be followed to rotate.Substrate baffle plate 105 is above substrate 103, substrate

Baffle 105 is by the driving rotation of rotary cylinder (not shown), and substrate baffle plate 105 is for preventing impurity from falling on substrate coating

Substrate baffle plate 105 is rotated away from 103 top of substrate when 103 plated film of substrate to pollute substrate 103 by surface.101 top of cavity

Magnetic control target 20 is installed, the shell of magnetic control target 20 is metal anode cover 203, is constituted between anode cap 203 and cavity 101 electrical logical

The electronics on road, electric field excitation returns to magnetic control target power supply (not shown) through cavity 101 eventually by anode cap 203.206 be gold

Belong to target, is located at 20 bottom of magnetic control target, provides metallic atom for 103 plated film of substrate.Magnetic control target 20 generates largely at work

Heat needs to take away heat by coolant liquid.206 upper surface of target abuts the cooling dome 205 of magnetic control target 20, and cooling dome 205 is used

In coolant liquid to be sealed in magnetic control target 20, cooling dome 205 is thermally conductive good metal material, and the magnetic field in magnetic control target 20 is by two

The magnet (not shown) of block opposite polarity (S, N) forms, and magnet is immersed in coolant liquid.Magnetic control target baffle 106 is installed on

101 top of cavity carries out spinning movement by the rotary cylinder 108 of 101 top of cavity, when magnetic control target 20 carries out pre-sputtering,

Magnetic control target baffle 106, which rotates to below target, prevents 206 atom sputtering of target to substrate 103, while when magnetic control target 20 does not sputter

Prevent target 206 from polluting.109 one end of conducting wire is connected to metal cooling dome 205, provides cathode voltage, conducting wire 109 for target 206

The other end connects magnetic control target power supply (not shown).

The characteristics of according to magnetron sputtering, when magnetic control target 20 works, a part of atom of target 206 can fall in anode cap 203

Upper formation film, the film after working long hours on anode cap 203 can be fallen on substrate 103, while thin on anode cap 203

Film, which is also possible to contact with target 206, causes short circuit.

Summary of the invention

The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, it is simple, reliable to provide a kind of structure, can

The magnetic control sputtering device of film on anode cap is cleaned in the case where not opening cavity.

The present invention further provides a kind of clean methods of magnetic control sputtering device.

In order to solve the above technical problems, the invention adopts the following technical scheme:

A kind of keep mum cleans the magnetic control sputtering device of anode cap, including cavity, target and is installed on cavity

Magnetic control target and revolving magnetic control target baffle, are equipped with the first connector, the second connector and elevating mechanism on the outside of the cavity, and described the

Insulating part is equipped between one connector and the cavity, second connector is connected to the cavity, the elevating mechanism with it is described

The connection of magnetic control target baffle, the anode of the magnetic control target power supply are connected to the cavity, and the magnetic control target baffle and the cavity connect

Logical, the target is connected to by the first conducting wire with the cathode of the magnetic control target power supply, and the anode cap of the magnetic control target passes through second

Conducting wire and first fittings.

As a further improvement of the above technical scheme:

The magnetic control target includes fixing seat and collets, and the fixed seating is set to the collets upper outside, described

Anode cap is sheathed on the collets lower outside.

The collets bottom is successively arranged magnetic yoke, cooling dome and cathode shield from the inside to the outside, and the anode cap is located at described

On the outside of cathode shield, the magnetic yoke lower part is equipped with opposite polarity magnet, and the target is pressed in the cooling by the cathode shield

Cover lower section, first conducting wire are connected to the cooling dome.

The magnetic control target baffle is led to outside the cavity by magnet fluid sealing component, and use is correspondingly provided with outside the cavity

In the rotary cylinder of driving magnetic control target baffle rotation, the elevating mechanism is connect with the rotary cylinder.

A kind of above-mentioned keep mum cleans the clean method of the magnetic control sputtering device of anode cap, comprising the following steps:

S1, cleaning prepare: the position of magnetic control target baffle is adjusted by rotary motion and elevating movement, make magnetic control target baffle with

Glow discharge sputtering can be carried out between the anode cap of magnetic control target;First conducting wire, which is connected to the first connector, makes anode cap and magnetic control target power supply

Cathode constitutes access;

S2, cleaning: magnetic control target power supply applies voltage between magnetic control target baffle and anode cap, is filled with process gas in cavity

Body generates glow discharge sputtering between magnetic control target baffle and anode cap, and the coating atom on anode cap is splashed out.

Compared with the prior art, the advantages of the present invention are as follows: disclosed by the invention keep mum cleans the magnetic control of anode cap

Sputtering equipment is provided with the first connector, the second connector and elevating mechanism outside cavity, and insulation is equipped between the first connector and cavity

Part, the second connector are connected to cavity, and elevating mechanism is connect with magnetic control target baffle, realize the lifting of magnetic control target baffle in the cavity,

So as to adjust the distance between magnetic control target baffle and anode cap, the anode of magnetic control target power supply is connected to cavity, magnetic control target baffle with

Cavity connection can apply voltage on magnetic control target baffle, and target is connected to by the first conducting wire with the cathode of magnetic control target power supply, magnetic control

The anode cap of target makes to keep insulation between anode cap and cavity by the second conducting wire and the first fittings, structure simply, can

It leans on.When needing to clean anode cap, the position of magnetic control target baffle is adjusted by rotary motion and elevating movement, the first conducting wire is connected

The cathode of anode cap and magnetic control target power supply is set to constitute access to the first connector, then magnetic control target power supply is in magnetic control target baffle and anode

Apply voltage between cover, process gas is filled in cavity, glow discharge sputtering can be generated between magnetic control target baffle and anode cap

The coating atom on anode cap is splashed out in the case where not opening cavity.

Cleaning method disclosed by the invention passes through the first connector, the second connector, the first conducting wire, the second conducting wire mode of communicating

Change, cooperate magnetic control target baffle position adjustment, can be realized the coating on anode cap in the case where not opening cavity

Atom splashes out, and step is simple, easy to operate.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of existing magnetic control sputtering device.

Fig. 2 be the present invention can keep mum the magnetic control sputtering device plated film for cleaning anode cap when structural schematic diagram.

Structural schematic diagram when Fig. 3 is the magnetic control sputtering device cleaning of the invention that can be kept mum and clean anode cap.

Fig. 4 is the structural schematic diagram of the magnetic control target in the present invention.

Fig. 5 is the flow chart of clean method of the present invention.

Each label indicates in figure: 101, cavity;102, work stage;103, substrate;104, heating device;105, substrate is kept off

Plate;106, magnetic control target baffle;109, the first conducting wire;20, magnetic control target;201, fixing seat;202, collets;203, anode cap;

204, cathode shield;205, cooling dome;206, target;208, magnet;211, magnetic yoke;301, elevating mechanism;302, rotary cylinder;

304, the first connector;305, insulating part;306, the second conducting wire;307, magnet fluid sealing component;308, the second connector;309, it connects

Conducting wire.

Specific embodiment

Below in conjunction with Figure of description and specific embodiment, invention is further described in detail.

As shown in Figures 2 to 4, keeping mum for the present embodiment cleans the magnetic control sputtering device of anode cap, including cavity

101, target 206 and the magnetic control target 20 being installed on cavity 101 and revolving magnetic control target baffle 106,101 outside of cavity

Equipped with the first connector 304, the second connector 308 and elevating mechanism 301, insulating part is equipped between the first connector 304 and cavity 101

305, the second connector 308 is connected to cavity 101, and elevating mechanism 301 is connect with magnetic control target baffle 106, the sun of 20 power supply of magnetic control target

Pole is connected to cavity 101, and magnetic control target baffle 106 is connected to cavity 101, and target 206 passes through the first conducting wire 109 and 20 electricity of magnetic control target

The cathode in source is connected to, and the anode cap 203 of magnetic control target 20 is connected to by the second conducting wire 306 with the first connector 304.

This, which can keep mum, cleans the magnetic control sputtering device of anode cap, and the first connector 304, second is provided with outside cavity 101

Connector 308 and elevating mechanism 301 are equipped with insulating part 305, the second connector 308 and cavity between first connector 304 and cavity 101

101 connections, elevating mechanism 301 are connect with magnetic control target baffle 106, realize lifting of the magnetic control target baffle 106 in cavity 101, from

And the distance between magnetic control target baffle 106 and anode cap 203 are adjusted, the anode of 20 power supply of magnetic control target is connected to cavity 101, magnetic control

Target baffle 106 is connected to cavity 101, can apply voltage on magnetic control target baffle 106, and target 206 passes through the first conducting wire 109 and magnetic

The cathode connection of 20 power supply of target is controlled, the anode cap 203 of magnetic control target 20 is connected to by the second conducting wire 306 with the first connector 304, and sun is made

It keeps insulating between pole cover 203 and cavity 101, structure is simple, reliable.When needing to clean anode cap 203, by rotary motion and

Elevating movement adjusts the position of magnetic control target baffle 106, and the first conducting wire 109, which is connected to the first connector 304, makes anode cap 203 and magnetic

The cathode for controlling 20 power supply of target constitutes access, and then 20 power supply of magnetic control target applies electricity between magnetic control target baffle 106 and anode cap 203

It presses, is filled with process gas in cavity 101, glow discharge sputtering, Ji Ke can be generated between magnetic control target baffle 106 and anode cap 203

The coating atom on anode cap 203 is splashed out in the case where not opening cavity.

As further preferred technical solution, magnetic control target 20 includes the collets 202 of fixing seat 201 and convex, Gu

Reservation 201 is sheathed on 202 upper outside of collets, and anode cap 203 is sheathed on 202 lower outside of collets, can effectively avoid sun

Pole cover 203 is directly connected with cavity 101 by fixing seat 201.

The detailed construction of the magnetic control sputtering device of anode cap is cleaned in keeping mum for the present embodiment: including: cavity 101, is

Stainless steel material, 101 inner bottom plating of cavity are equipped with work stage 102, and work stage 102 passes through the rotating electric machine outside cavity 101 (in figure not

Show) rotation is driven, speed 0r/min~40r/min is controllable.Substrate 103 is placed in 102 top of work stage, can follow work stage

102 synchronous rotaries.Heating device 104 is installed below work stage 102,0 DEG C~400 DEG C heating can be carried out to substrate 103.Substrate

Baffle 105 is above substrate 103, and substrate baffle plate 105 uses the stainless steel material of model 104, (in figure not by rotary cylinder

It shows, identical as the rotary cylinder 302 that magnetic control target baffle 106 is equipped with) rotation, substrate baffle plate 105 is for preventing impurity from falling on

Substrate baffle plate 105 is rotated away from 103 top of substrate when 103 plated film of substrate to pollute substrate 103 by 103 coated surface of substrate.

Cylindrical magnetic control target 20 is installed, fixing seat 201 constitutes the stainless steel casing of magnetic control target 20 at the top of chamber 101.

Target 206 is metal targets, is located at 20 bottom of magnetic control target, provides metallic atom for 103 plated film of substrate.Stainless steel cathode cover 204

Target 206 is tightly pressed against on cooling dome 205, cooling dome 205 is for coolant liquid to be sealed in magnetic control target 20, cooling dome 205

It is thermally conductive good metal material, generally selects metallic copper.Cooling dome 205 and collets 202 constitute sealed chamber, magnetic control target 20

Interior magnetic field is made of the magnet 208 of two pieces of polarity of sealed chamber opposite (S and N), and magnet 208 is immersed in coolant liquid.Magnet

208 are fixed on the lower section of magnetic yoke 211, and magnetic yoke 211 is fixed on 202 lower section of insulator.Anode cap 203 is stainless steel material, anode

Cover 203 is connect by the second conducting wire 306 with the first connector 304 on cavity 101, is passed through between the first connector 304 and chamber 101

Insulating part 305 insulate.Second connector 308 is fixed on cavity 101, and is connected with cavity 101.

The side of magnetic control target 20 is equipped with magnetic control target baffle 106, and magnetic control target baffle 106 is drawn by magnet fluid sealing component 307

To outside cavity 101, rotary cylinder 302 is located at 307 top of magnet fluid sealing component, and is fixed on the elevating mechanism 301 of slidingtype

On, elevating mechanism 301 can drive rotary cylinder 302 and magnetic control target baffle 106 to go up and down, and rotary cylinder 302 can drive magnetic control

Target baffle 106 rotates, and magnetic control target baffle 106 is conductor.First conducting wire 109 is connected to metal cooling dome 205, mentions for target 206

For cathode voltage, 109 other end of the first conducting wire is connected to magnetic control target power supply (not shown).

The clean method of the magnetic control sputtering device of anode cap is cleaned in keeping mum for the present embodiment, comprising the following steps:

S1, cleaning prepare: adjusting the position of magnetic control target baffle 106 by rotary motion and elevating movement, keep off magnetic control target

Glow discharge sputtering can be carried out between plate 106 and the anode cap 203 of magnetic control target 20;First conducting wire 109, which is connected to the first connector 304, makes sun

Pole cover 203 and the cathode of 20 power supply of magnetic control target constitute access;

S2, cleaning: 20 power supply of magnetic control target applies voltage between magnetic control target baffle 106 and anode cap 203, in cavity 101

It is filled with process gas, generates glow discharge sputtering between magnetic control target baffle 106 and anode cap 203, by the coating atom on anode cap 203

It splashes out.

The cleaning method passes through the first connector 304, the second connector 308, the first conducting wire 109,306 side of connection of the second conducting wire

The change of formula cooperates the adjustment of 106 position of magnetic control target baffle, can be realized anode cap 203 in the case where not opening cavity

On coating atom splash out, step is simple, easy to operate.It should be noted that in step S1 cleaning preparation, magnetic control target baffle

106 rotary motion, elevating movement and the first conducting wire 109 is connected to respectively having no step by step for the first connector 304 and successively wants

It asks.

The present invention can keep mum the magnetic control sputtering device for cleaning anode cap specific magnetron sputtering plating working principle it is as follows:

First connector 304 is shorted with the second connector 308 by connecting wire 309, i.e. anode cap 203 and cavity 101 is short

The anode on road, magnetic control target power supply (not shown) is connect with cavity 101, and the cathode of magnetic control target power supply (not shown) passes through

First electric wire 109 is connected to cooling dome 205, and the cooling dome 205 and target 206 of close contact are conductings.

Substrate 103 is placed in work stage 102, and substrate baffle plate 105 is rotated away from 103 top of substrate.Pass through elevating mechanism 301

Magnetic control target baffle 106 is displaced downwardly to (8mm to 12mm, guarantee target baffle 106 can revolve without let or hindrance apart from the lower section of cathode shield 204

Turn), the lower section of target 206 is left by 302 rotary magnetron target baffle 106 of rotary cylinder.In anode cap 203 and cooling dome 205

Between the voltage (10V to 1000V, preferably 300V to 500V) that applies, be filled with process gas Ar, set the pressure in cavity 101

Power (0.001Pa to 10Pa, preferably 0.1Pa to 2Pa), process gas ionizes under the action of high voltage, the electronics ionized out

After screw multiple impact Ar is allowed to ionization under the influence of a magnetic field, anode cap 203, while Ar+ accelerating impact are eventually fallen in

The atom of target 206 is splashed out, is deposited on substrate 103 by target 206.

Pre-sputtering is such as needed, need to only be moved down magnetic control target baffle 106 by elevating mechanism 301, guarantees that magnetic control target 20 can rise

The distance of arc, magnetic control target baffle 106 is in the lower section of target 206, and substrate baffle plate 105 is in the top of substrate 103.Then it carries out above-mentioned

Process can pre-sputtering.

The present invention can keep mum the magnetic control sputtering device for cleaning anode cap specific cleaning principle it is as follows:

The anode of magnetic control target power supply (not shown) is connect with cavity 101, due to magnetic control target baffle 106 and cavity 101

Access is constituted, i.e. magnetic control target power anode and magnetic control target baffle 106 constitutes access.Disconnect the first connector 304 and the second connector 308

Connecting wire 309, while the first conducting wire 109 for being connected to magnetic control target power cathode being connected on the first connector 304, in this way

Anode cap 203 constitutes access with magnetic control target cathode by the second conducting wire 306.

The lower section that target 206 is arrived by 302 rotary magnetron target baffle 106 of rotary cylinder, by elevating mechanism 301 by magnetic control

Target baffle 106 moves up, and is less than 2mm, anode of the magnetic control target baffle 106 as anode cap 203, while magnetic control from cathode shield 204

Target baffle 106 can also prevent on the atomic deposition to target 206 sputtered out to anode cap 303, to avoid pollution target

206.Apply voltage (10V to 1000V, preferably 300V to 500V) between anode cap 203 and magnetic control target baffle 106, is filled with

Process gas Ar sets the pressure (0.001Pa to 10Pa, preferably 0.1Pa to 2Pa) in cavity 101, and process gas is in high electricity

It is ionized under the action of pressure, the electronics ionized out is finally fallen after screw multiple impact Ar is allowed to ionization under the influence of a magnetic field

To magnetic control target baffle 106, while 203 surface of Ar+ accelerating impact anode cap, the coating atom of anode cap 203 is splashed out, thus real

Now to the cleaning function of anode cap 203.

Although the present invention has been disclosed as a preferred embodiment, however, it is not intended to limit the invention.It is any to be familiar with ability

The technical staff in domain, without deviating from the scope of the technical scheme of the present invention, all using the technology contents pair of the disclosure above

Technical solution of the present invention makes many possible changes and modifications or equivalent example modified to equivalent change.Therefore, all

Without departing from the content of technical solution of the present invention, according to the present invention technical spirit any simple modification made to the above embodiment,

Equivalent variations and modification, all shall fall within the protection scope of the technical scheme of the invention.

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