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一种薄膜温度传感器及制备方法 【EN】A kind of film temperature sensor and preparation method

申请(专利)号:CN201610790145.5国省代码:北京 11
申请(专利权)人:【中文】北京埃德万斯离子束技术研究所股份有限公司【EN】Limited by Share Ltd of Beijing advanced ion beam technology research institute
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摘要:
【中文】本发明涉及一种薄膜温度传感器及制备方法,该薄膜温度传感器至少包括:基片;薄膜热电偶,其通过离子束溅射沉积技术在所述基片上形成;所述薄膜热电偶包括正极热电偶膜和负极热电偶膜,所述正极热电偶膜和负极热电偶膜的内端对接形成热电偶接点;焊盘膜,其通过离子束溅射沉积技术在正极热电偶膜和负极热电偶膜的外端上形成,用于与外接引线连接;保护膜,其通过离子束溅射沉积技术覆盖在所述薄膜热电偶上,并覆盖薄膜热电偶所在基片区域表面。本发明使用离子束溅射沉积技术制备薄膜温度传感器,制备的各层薄膜密度高、附着力强,镀覆的薄膜热电偶厚度小,对温度的响应时间快,并且热电偶封装以后体积小,测量精度高。 【EN】Paragraph:The present invention relates to a kind of film temperature sensor and preparation method, which is included at least: substrate;Film thermocouple is formed on the substrate by ion aeam sputtering deposition technique;The film thermocouple includes positive thermocouple film and cathode thermocouple film, and the inner end of the anode thermocouple film and cathode thermocouple film docks to form thermal cross;Pad film is formed on the outer end of positive thermocouple film and cathode thermocouple film by ion aeam sputtering deposition technique, for connecting with external lead wire;Protective film is covered on the film thermocouple by ion aeam sputtering deposition technique, and covers film thermocouple place substrate region surface.The present invention prepares film temperature sensor using ion aeam sputtering deposition technique, and each layer film density of preparation is high, adhesive force is strong, and the thin film thermoelectric dual thickness of plating is small, and fast to the response time of temperature and small in size after thermocouple encapsulation, measurement accuracy is high.Image:201610790145.GIF

主权项:
【中文】1.一种薄膜温度传感器,其特征在于,至少包括: 基片; 薄膜热电偶,其通过离子束溅射沉积技术在所述基片上形成;所述薄膜热电偶包括正极热电偶膜和负极热电偶膜,所述正极热电偶膜和负极热电偶膜的内端对接形成热电偶接点; 焊盘膜,其通过离子束溅射沉积技术在正极热电偶膜和负极热电偶膜的外端上形成,用于与外接引线连接; 保护膜,其通过离子束溅射沉积技术覆盖在所述薄膜热电偶上,并覆盖薄膜热电偶所在基片区域表面; 其中,所述薄膜温度传感器采用六靶台双离子束反应溅射沉积设备制作,所述六靶台双离子束反应溅射沉积设备包括主离子源、辅离子源、工件台和可旋转的六靶台;所述六靶台位于主离子源的离子束发射方向上,所述工件台位于所述辅离子源的离子束发射方向上以及主离子源的离子束溅射沉积的方向上,且所述工件台设置有可开关的挡板,用于在关闭时遮挡工件台上工件防止离子束溅射; 制备所述薄膜温度传感器的方法中将靶材固定于六靶台的各个靶面上,并将基片固定在工件台上,在形成所述薄膜热电偶、所述焊盘膜和所述保护膜的步骤中通过旋转六靶台将所需的靶材置于主离子源的轰击范围内,并在靶材清洗步骤中关闭工件台的挡板防止离子束溅射,使用主离子源产生的低能离子束对靶材进行轰击;在预处理步骤中打开工件台的挡板,使用辅离子源产生的低能离子束对需要镀膜的工件进行轰击。 【EN】1. a kind of film temperature sensor, which is characterized in that include at least: Substrate; Film thermocouple is formed on the substrate by ion aeam sputtering deposition technique;The film thermocouple includes just It docks to form thermoelectricity and couple in the inner end of very hot galvanic couple film and cathode thermocouple film, the anode thermocouple film and cathode thermocouple film Point; Pad film is formed on the outer end of positive thermocouple film and cathode thermocouple film by ion aeam sputtering deposition technique, For being connect with external lead wire; Protective film is covered on the film thermocouple by ion aeam sputtering deposition technique, and covers film thermocouple institute On substrate region surface; Wherein, the film temperature sensor uses six target platform double-ion beam reactive sputter-deposition equipment makings, the six targets platform Double-ion beam reactive sputter-deposition equipment includes main ion source, auxiliary ion source, work stage and rotatable six targets platform;Six target Platform is located on the ion beam emittance direction in main ion source, and the work stage is located on the ion beam emittance direction of the auxiliary ion source And on the direction of the ion beam sputter depositing in main ion source, and the work stage is provided with switchable baffle, for closing Workpiece in work stage is blocked when closing prevents ion beam sputtering; It prepares and is fixed on target in the method for the film temperature sensor on each target surface of six target platforms, and substrate is fixed In work stage, pass through six target platforms of rotation in the step of forming the film thermocouple, the pad film and the protective film Required target is placed within the scope of the bombardment in main ion source, and in target cleaning step close work stage baffle prevent from Beamlet sputtering, bombards target using the low energy ion beam that main ion source generates;Work stage is opened in pre-treatment step Baffle, the low energy ion beam generated using auxiliary ion source bombards the workpiece for needing plated film.


说明书

【中文】

一种薄膜温度传感器及制备方法

技术领域

本发明涉及传感器技术领域,尤其涉及一种薄膜温度传感器及制备方法。

背景技术

传感器技术是与通信技术和计算机技术构成现代信息产业的三大支柱,是一项当今世界令人瞩目的迅猛发展的高新技术,同时又是一项相对通信和计算机技术整体落后的瓶颈工业。传统的传感器因功能、特性、体积等难以满足现代计算机技术和通信技术对传感器的精度、可靠性、抗环境性、信息处理能力等要求而被逐渐淘汰。温度传感器是感受温度并转换成可用输出信号的传感器,主要包括热电阻、热敏电阻、热电偶以及集成P-N温度传感器。随着技术的发展,红外辐射和光纤温度等温度传感器也得到了越来越多的应用。

然而,传统的热电偶传感芯片以正负极热电偶丝焊接形成热电偶接点进行测温,由于热偶丝式热电偶材料为块体材料,其热电偶接点的厚度较厚,对温度的响应时间较长,且热电偶封装以后具有较大的体积。因此,亟待开发一种响应时间快且体积小的高性能薄膜温度传感器。

发明内容

本发明要解决的技术问题是,针对现有薄膜温度传感器的响应时间慢且体积大的缺陷,提供一种薄膜温度传感器及制备方法。

为了解决上述技术问题,本发明提供了一种薄膜温度传感器,至少包括:

基片;

薄膜热电偶,其通过离子束溅射沉积技术在所述基片上形成;所述薄膜热电偶包括正极热电偶膜和负极热电偶膜,所述正极热电偶膜和负极热电偶膜的内端对接形成热电偶接点;

焊盘膜,其通过离子束溅射沉积技术在正极热电偶膜和负极热电偶膜的外端上形成,用于与外接引线连接;

保护膜,其通过离子束溅射沉积技术覆盖在所述薄膜热电偶上,并覆盖薄膜热电偶所在基片区域表面。

在根据本发明优选实施例所述的薄膜温度传感器中,所述薄膜热电偶的厚度为0.5~0.8μm。

在根据本发明优选实施例所述的薄膜温度传感器中,所述薄膜热电偶从以下一组热电偶材料中选择:镍铬10-镍硅3、铂铑30-铂铑6、钨铼5-钨铼26、钨铼3-钨铼25、镍铬-铜镍、铁-铜镍、镍铬硅-镍硅、铂铑13-铂、铂铑10-铂和铜-铜镍。

在根据本发明优选实施例所述的薄膜温度传感器中,所述薄膜热电偶中正极热电偶膜和负极热电偶膜分别采用镍铬和镍硅热电偶材料,其中镍铬热电偶材料的薄膜沉积时间t1通过以下公式计算:

镍硅热电偶材料的薄膜沉积时间t2通过以下公式计算:

其中m为预设薄膜厚度,x为离子束的离子能量,且离子束流设置为100mA。

在根据本发明优选实施例所述的薄膜温度传感器中,所述薄膜温度传感器还包括通过离子束溅射沉积技术形成于所述薄膜热电偶以及保护膜之间的五氧化二钽绝缘过渡膜。

本发明还提供了一种薄膜温度传感器的制备方法,该制备方法包括以下步骤:

S1、提供基片;

S2、通过离子束溅射沉积技术在基片上沉积薄膜热电偶;所述薄膜热电偶包括正极热电偶膜和负极热电偶膜,所述正极热电偶膜和负极热电偶膜的内端对接形成热电偶接点;

S3、通过离子束溅射沉积技术在正极热电偶膜和负极热电偶膜的外接端上形成焊盘膜;

S4、通过离子束溅射沉积技术在所述薄膜热电偶上形成保护膜,且所述保护膜覆盖薄膜热电偶所在基片区域表面。

实施本发明的薄膜温度传感器及制备方法,具有以下有益效果:本发明使用离子束溅射沉积技术制备薄膜温度传感器,制备的各层薄膜密度高、附着力强,镀覆的薄膜热电偶厚度小,对温度的响应时间快,并且热电偶封装以后体积小,测量精度高。

附图说明

图1为根据本发明优选实施例的薄膜温度传感器结构示意图;

图2为根据本发明优选实施例的薄膜温度传感器的制备方法流程图;

图3为六靶台双离子束反应溅射沉积设备的结构示意图。

具体实施方式

为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。

在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的,其中为了清楚表达的目的,放大了某些细节,并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的,实际中可能由于制造公差或技术限制而有所偏差,并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。

在本公开的上下文中,当将一层/元件称作位于另一层/元件“上”时,该层/元件可以直接位于该另一层/元件上,或者它们之间可以存在居中层/元件。另外,如果在一种朝向中一层/元件位于另一层/元件“上”,那么当调转朝向时,该层/元件可以位于该另一层/元件“下”。

请参阅图1,为根据本发明优选实施例的薄膜温度传感器结构示意图。如图1所示,该薄膜温度传感器至少包括:基片1、薄膜热电偶、焊盘膜5和保护膜7。

其中,基片1优选但不限于碳化硅质基片。

薄膜热电偶采用离子束溅射沉积技术在基片1上形成。该薄膜热电偶包括正极热电偶膜2和负极热电偶膜3,其中正极热电偶膜2和负极热电偶膜3的内端对接形成热电偶接点4。薄膜热电偶的厚度为0.5~0.8μm。在本发明的优选实施例中,薄膜热电偶优选但不限于使用表格1所示的热电偶材料,具体的选择根据薄膜温度传感器的使用温度及信号输出要求决定。

表格1

分度号

B

C

D

E

J

材料

铂铑30-铂铑6

钨铼5-钨铼26

钨铼3-钨铼25

镍铬-铜镍

铁-铜镍

分度号

K

N

R

S

T

材料

镍铬10-镍硅3

镍铬硅-镍硅

铂铑13-铂

铂铑10-铂

铜-铜镍

焊盘膜5通过离子束溅射沉积技术在正极热电偶膜2和负极热电偶膜3的外接端上沉积而成,用于与外接引线连接。焊盘膜5优选但不限于。在本实施例中,引线膜4由金Au制成。虽然本实施例给出了一种具体的焊盘膜材料,但本发明不限于此,而是可以采用其它适用的电极材料,例如铝钴合金。焊盘膜5表面可以涂覆有耐高温无机胶状材料,如无机硅铝酸盐材料。

保护膜7则通过离子束溅射沉积技术覆盖在薄膜热电偶上,并覆盖薄膜热电偶所在基片区域表面。该保护膜7优选但不限于二氧化硅材料。所述保护膜7能阻挡空气中的氧和水汽对传感器的侵蚀,提高薄膜温度传感器的可靠性和稳定性。

在本发明优选的实施例中,薄膜温度传感器还包括通过离子束溅射沉积技术形成于薄膜热电偶以及保护膜7之间的五氧化二钽绝缘过渡膜6。该Ta2O5绝缘过渡膜6是为了缓减后续制备的保护层7与基片1及热电偶材料的晶格参数和热膨胀系数的不匹配性,过渡膜的厚度约为150~180nm。

请参阅图2,为根据本发明优选实施例的薄膜温度传感器的制备方法流程图。如图2所示,本发明还提供了一种薄膜温度传感器的制备方法,可以用于制备上述薄膜温度传感器。该制备方法包括以下步骤:

首先,在步骤S1中,提供基片1。

随后,在步骤S2中,通过离子束溅射沉积技术在基片1上薄膜热电偶。该薄膜热电偶包括正极热电偶膜2和负极热电偶膜3,该正极热电偶膜2和负极热电偶膜3的内端对接形成热电偶接点4。该步骤S2进一步包括:

S2-1、在基片1上制作正极热电偶膜光刻胶,并固定在工件台上;

S2-2、设置离子束的离子能量为500~700eV,设置离子束流密度为0.4~0.55mA/cm2;并使真空仓的本底压强抽到并保持在3×10-3Pa及以下;设置工件台自转速度为7~9rpm,沉积角度为45°;

S2-3、利用离子源轰击正极热电偶靶材,使正极热电偶靶材溅射出来的粒子沉积在基片上,形成正极热电偶膜;随后去除正极热电偶膜光刻胶;

S2-4、在基片上制作负极热电偶膜光刻胶,并固定在工件台上;

S2-5、利用离子源轰击负极热电偶靶材,使负极热电偶靶材溅射出来的粒子沉积在基片上,形成负极热电偶膜;随后去除负极热电偶膜光刻胶。

随后,在步骤S3中,通过离子束溅射沉积技术在正极热电偶膜2和负极热电偶膜3的外接端上形成焊盘膜5。

随后,在步骤S4中,通过离子束溅射沉积技术在薄膜热电偶上形成保护膜7,且保护膜7覆盖薄膜热电偶所在基片区域表面。

在本发明的优选实施例中,还包括在步骤S3和步骤S4之间执行的步骤S3’,通过离子束溅射沉积技术在薄膜热电偶上沉积五氧化二钽绝缘过渡膜6。该五氧化二钽绝缘过渡膜6也覆盖薄膜热电偶所在基片区域表面。之后在五氧化二钽绝缘过渡膜6上镀覆所述保护膜7。

在本发明的另一项优选实施例中,步骤S2~S4中离子源在轰击靶材前还包括靶材清洗步骤,该步骤中采用低能离子束对靶材表面轰击2~4分钟,以去除靶材表面杂质,该低能离子束的离子能量Ei=200~500eV,离子束流密度为Jb=0.2~0.4mA/cm2。更优选地,在步骤S2~S4中离子源在轰击靶材前还包括预处理步骤,该步骤中采用低能离子束对需要镀膜的工件表面轰击2~4分钟,以增大工件表面附着力,该低能离子束的离子能量Ei=200~500eV,离子束流密度为Jb=0.2~0.4mA/cm2

在本发明的优选实施例中,薄膜热电偶中的正极热电偶膜2和负极热电偶膜3分别采用镍铬和镍硅热电偶材料。镍铬-镍硅热电偶,即镍铬10-镍硅3热电偶,分度号为K,是目前用量最大的廉金属热电偶。正极镍铬热电偶材料的化学成分为:Ni:Cr=90:10,负极镍硅热电偶材料的化学成分为:Ni:Si=97:3,其使用温度为-200~1300℃。K型热电偶具有线性度好,热电动势较大,灵敏度高,稳定性和均匀性较好,抗氧化性能强,价格便宜等优点,能用于氧化性惰性气氛中。

本发明中通过离子束溅射沉积技术能够使得沉积的薄膜热电偶中正极热电偶膜2和负极热电偶膜3的厚度均达到0.5~0.8μm。鉴于目前常用的薄膜制备工艺无法精确控制薄膜沉积厚度,而薄膜温度传感器对厚度的要求较高,本发明通过大量实验及经验总结,并结合离子束溅射沉积工艺中离子束的离子能量及离子束流对薄膜沉积速率的影响,得出了镍铬和镍硅热电偶材料薄膜沉积时间的最佳计算公式。

其中步骤S2中选取的镍铬热电偶材料的薄膜沉积时间t1通过以下公式(1)计算:

步骤S2中选取的镍硅热电偶材料的薄膜沉积时间t2通过以下公式(2)计算:

公式(1)和公式(2)中m为预设薄膜厚度,即需要沉积的薄膜热电偶的厚度,单位为nm。x为离子束的离子能量,单位为eV。计算获得的薄膜沉积时间t1和t2的单位为min。且在使用该公式精确设置薄膜沉积时间,以控制薄膜达到预设薄膜厚度时,需要在离子束溅射沉积过程中将离子束流设置为标准值,即100mA。

本发明还对上述公式(1)和(2)进行了验证。以离子束能量分别为400eV、450eV、500eV、550eV、600eV和700eV,预设的薄膜热电偶的厚度分别为0.8μm、0.7μm、0.6μm和0.5μm,分别计算出最佳的薄膜沉积时间t1和t2。并通过实验,分别在基片1上使用离子束溅射沉积技术镀膜,设置离子束流为100mA,溅射角θs=45°,沉积角θs=17°,离子束能量分别为400eV、450eV、500eV、550eV、600eV和700eV,采用上述计算出的薄膜沉积时间t1和t2分别沉积镍铬热电偶材料和镍硅热电偶材料,并测量所得薄膜厚度。通过与预设厚度对比可知,当采用离子能量为450~550eV时,本发明可以将沉积的薄膜厚度精确控制在±2%的范围内。当采用离子能量为600~700eV时,本发明可以将沉积的薄膜厚度精确控制在±5%的范围内。

请参阅图3,为六靶台双离子束反应溅射沉积设备的结构示意图。如图3所示,本发明的薄膜温度传感器的制备方法优选但不限于采用该六靶台双离子束反应溅射沉积设备制备。该六靶台双离子束反应溅射沉积设备包括主离子源21、辅离子源26、工件台28和可旋转的六靶台24。主离子源21和辅离子源26位于真空室29的两侧相对设置,两者的发射轴平行且间隔预定距离。六靶台24位于真空室中部主离子源的离子束22发射方向上,具有六个靶面,可分别用于固定钽靶材、二氧化硅靶材、正负热电偶靶材和焊盘膜靶材。工件台28用于固定基片1,位于辅离子源的离子束27发射方向上,同时位于六靶台24工作靶面的离子束溅射粒子25沉积的方向上。该工件台28上还设有用于遮挡工件台28上工件的可开关的挡板20。如图所示,六靶台24与主离子源21呈45度设置,工件台28与辅离子源26呈45度设置。

下面结合图3的设备对薄膜温度传感器的制备过程进行具体描述。该实施例中以碳化硅制备基片1,依次镀上NiCr、NiSi、Au、Ta2O5、SiO2五种薄膜。

一、环境准备:

1、工作气体用纯度为99.99%的Ar,反应气体用纯度为99.99%的O2。工件台自转速度为8rpm。

2、将长×宽=10×5mm的基片1固定在工件台28上作为工件,将NiCr、NiSi、Au、Ta和SiO2的靶材23依次固定在六靶台24的各个靶面上。

3、关闭真空仓21,先用机械泵单机粗抽,当真空度达到10Pa时,启动分子泵双机精抽,将本底真空度抽到并保持在:3×10-3Pa。

二、提供基片1,对表面进行清洗:

1、用机械抛光和常规化学清洗先对基片1去油、去污、去氧化物。

2、打开工件台的挡板20,用辅离子源26产生的低能Ar离子束轰击基片1表面3min,在基片1表面轰出的小坑将很大程度提高基片1与NiCr正极热电偶膜和NiSi负极热电偶膜以及Au焊盘膜的附着力。该低能Ar离子束的离子能量Ei=400eV,离子束流密度Jb=0.35mA/cm2

三、沉积NiCr正极热电偶膜:

1、旋转六靶台24选择NiCr靶材;在基片1上制作正极热电偶膜光刻胶。

2、关闭工件台的挡板20,用主离子源21产生的低能Ar离子束轰击NiCr靶材表面3min,去除靶材表面杂质。该低能Ar离子束的离子能量Ei=400eV,离子束流密度为Jb=0.35mA/cm2

3、打开工件台的挡板20,用主离子源21产生的高能Ar离子束轰击NiCr靶材,NiCr靶材溅射出来的粒子沉积在基片1上,生成NiCr正极热电偶膜。该高能Ar离子束的离子能量Ei=700eV,离子束流密度为Jb=0.55mA/cm2

四、沉积NiSi负极热电偶膜:

1、旋转六靶台24选择NiSi靶材;清除工件上剩余的光刻胶,在基片1上制作负极热电偶膜光刻胶。

2、关闭工件台的挡板20,用主离子源21产生的低能Ar离子束轰击NiSi靶材表面3min,去除靶材表面杂质。该低能Ar离子束的离子能量Ei=400eV,离子束流密度为Jb=0.35mA/cm2

3、打开工件台的挡板20,用主离子源21产生的高能Ar离子束轰击NiSi靶材,NiSi靶材溅射出来的粒子沉积在基片1上,生成NiSi负极热电偶膜。该高能Ar离子束的离子能量Ei=700eV,离子束流密度为Jb=0.55mA/cm2

五、沉积Au焊盘膜

1、旋转六靶台24选择Au靶材,清除工件上剩余的光刻胶,在工件上制作焊盘膜光刻胶。

2、关闭工件台的挡板20,用主离子源21产生的低能Ar离子束轰击Au靶材表面3min,去除靶材表面杂质。该低能Ar离子束的离子能量Ei=400eV,离子束流密度Jb=0.35mA/cm2

3、打开工件台的挡板20,用辅离子源26产生的低能Ar离子束轰击工件台3min,增强现有薄膜表面附着力。该低能Ar离子束的离子能量Ei=400eV,离子束流密度Jb=0.35mA/cm2

4、用主离子源21产生的高能Ar离子束轰击Au靶材,Au靶材溅射出来的粒子沉积在NiCr正极热电偶膜和NiSi负极热电偶膜的外接端上,生成Au焊盘膜。该高能Ar离子束的离子能量Ei=700eV,离子束流密度Jb=0.55mA/cm2

六、沉积Ta2O5绝缘过渡膜:

1、旋转六靶台24选择Ta靶材;清除工件上剩余的光刻胶,并制作绝缘过渡膜光刻胶。

2、关闭工件台的挡板20,用主离子源21产生的低能Ar离子束轰击Ta靶材表面3min,去除靶材表面杂质。该低能Ar离子束的离子能量Ei=400eV,离子束流密度为Jb=0.35mA/cm2

3、打开工件台的挡板20,用主离子源21产生的高能Ar离子束轰击Ta靶材,Ta靶材溅射出来的粒子与辅离子源26产生的O2离子束发生反应,形成Ta2O5化合物沉积在薄膜热电偶及薄膜热电偶所在基片区域表面上,生成Ta2O5绝缘过渡膜。该高能Ar离子束的离子能量Ei=700eV,离子束流密度为Jb=0.55mA/cm2

七、沉积SiO2保护膜:

1、旋转六靶台24选择SiO2石英玻璃靶材;清除工件上剩余的光刻胶,并制作保护膜光刻胶。

2、关闭工件台的挡板20,用主离子源21产生的低能Ar离子束轰击SiO2靶材表面3min,去除靶材表面杂质。该低能Ar离子束的离子能量Ei=400eV,离子束流密度为Jb=0.35mA/cm2

3、打开工件台的挡板20,用辅离子源26产生的低能Ar离子束轰击工件台3min,增强Ta2O5绝缘过渡膜表面附着力。该低能离子束的离子能量Ei=400eV,离子束流密度为Jb=0.35mA/cm2

4、用主离子源21产生的高能Ar离子束轰击SiO2靶材,靶材溅射出来的粒子形成SiO2化合物沉积在Ta2O5绝缘过渡膜上,形成SiO2保护膜。该高能Ar离子束的离子能量Ei=700eV,设置离子束流密度Jb=0.55mA/cm2

5、打开真空仓29,取出工件台28,清除工件表面剩余的光刻胶,制成薄膜温度传感芯片。

本发明采用的双离子束反应溅射沉积(Double Ion Bean Reactive SputteringDeposition,简称DIBRSD)技术,是先用低能量的工作气体离子束对靶材和衬底进行清洗,以充入工作气体的主离子源产生的主离子束轰击靶材,靶材溅射出来的粒子与充入反应气体的辅离子源产生的辅离子束进行化学反应,产生稳定的化合物沉积在衬底上,生成化合物薄膜。其具有以下显著特点:

1、薄膜的均匀度好,薄膜的应力小且附着力高,光学性质更加重复稳定;工作参数独立控制自由度大,可以纳米级控制薄膜生长、薄膜微结构和薄膜晶格取向;

2、靶材粒子能量高,沉积的薄膜膜层密度高、杂质少,与衬底的结合力高;对靶材和衬底进行预清洗,能提高薄膜和衬底的附着力;

3、适用除有机材料和易分解材料以外的众多材料,无环境污染干法镀膜,可制备合金薄膜、氧化物薄膜、高熔点薄膜和绝缘薄膜。

因此,采用六靶台双离子束反应溅射沉积技术,制成的高性能薄膜温度传感芯片体积小、精度高、响应时间快、温漂小、稳定性好、可靠性高、使用寿命长、抗振抗扰抗冲击能力强,适用于恶劣环境,并且制作工艺简单,不用高温老化,生产时间短,综合指标优于磁控溅射制备的同类产品。

最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

【EN】

A kind of film temperature sensor and preparation method

Technical field

The present invention relates to sensor technical field more particularly to a kind of film temperature sensor and preparation methods.

Background technique

Sensor technology is the three big pillars that modern information industry is constituted with the communication technology and computer technology, is one and works as

The new and high technology for the fast development that this life circle attracts people's attention, while being that a relative communication and computer technology integrally fall behind again

Bottleneck industry.Traditional sensor is difficult to meet the present computer technology and the communication technology to sensing because of function, characteristic, volume etc.

Precision, reliability, environment resistance, information processing capability of device etc. are required and are gradually eliminated.Temperature sensor is to experience temperature

And it is converted into the sensor of usable output signal, it mainly include that thermal resistance, thermistor, thermocouple and integrated P-N temperature pass

Sensor.With the development of technology, the temperature sensors such as infra-red radiation and fiber optic temperature have also obtained more and more applications.

However, traditional thermocouple sensing chip welds to form thermal cross progress thermometric with positive and negative anodes thermocouple wire,

Since thermocouple wire form thermocouple material is block materials, the thickness of thermal cross is thicker, longer to the response time of temperature,

And there is biggish volume after thermocouple encapsulation.It would therefore be highly desirable to develop a kind of response time it is fast and small in size high-performance it is thin

Film temperature sensor.

Summary of the invention

The technical problem to be solved by the present invention is to slow and bulky for the response time of existing film temperature sensor

Defect provides a kind of film temperature sensor and preparation method.

In order to solve the above-mentioned technical problems, the present invention provides a kind of film temperature sensors, include at least:

Substrate;

Film thermocouple is formed on the substrate by ion aeam sputtering deposition technique;The film thermocouple packet

Include positive thermocouple film and cathode thermocouple film, the inner end of the anode thermocouple film and cathode thermocouple film docks to form thermoelectricity

It couples a little;

Pad film passes through ion aeam sputtering deposition technique shape on the outer end of positive thermocouple film and cathode thermocouple film

At for being connect with external lead wire;

Protective film is covered on the film thermocouple by ion aeam sputtering deposition technique, and covers thin film thermoelectric

Substrate region surface where even.

In the film temperature sensor described in preferred embodiment according to the present invention, the film thermocouple with a thickness of

0.5~0.8 μm.

In the film temperature sensor described in preferred embodiment according to the present invention, the film thermocouple is from following set of

It is selected in thermocouple material: nickel chromium triangle 10- nisiloy 3, platinum rhodium 30- platinum rhodium 6, W-Re 5- W-Re 26, W-Re 3- W-Re 25, nickel chromium triangle-copper

Nickel, iron/copper nickel, nickel chromium triangle silicon-nisiloy, platinum rhodium 13- platinum, platinum rhodium 10- platinum and copper-cupro-nickel.

In the film temperature sensor described in preferred embodiment according to the present invention, positive thermoelectricity in the film thermocouple

Nickel chromium triangle and Nickel-Silicom thermocouple material is respectively adopted in even film and cathode thermocouple film, wherein when the film deposition of nickel chromium triangle thermocouple material

Between t1It is calculated by the following formula:

The film sedimentation time t of Nickel-Silicom thermocouple material2It is calculated by the following formula:

Wherein m is default film thickness, and x is the ion energy of ion beam, and ion beam current is set as 100mA.

In the film temperature sensor described in preferred embodiment according to the present invention, the film temperature sensor further includes

The insulation transition of the tantalum pentoxide between the film thermocouple and protective film is formed in by ion aeam sputtering deposition technique

Film.

The present invention also provides a kind of preparation method of film temperature sensor, the preparation method the following steps are included:

S1, substrate is provided;

S2, pass through ion aeam sputtering deposition technique in deposition on substrate film thermocouple;The film thermocouple includes just

It docks to form thermoelectricity and couple in the inner end of very hot galvanic couple film and cathode thermocouple film, the anode thermocouple film and cathode thermocouple film

Point;

S3, weldering is formed in the external connection end of positive thermocouple film and cathode thermocouple film by ion aeam sputtering deposition technique

Disk film;

S4, protective film is formed on the film thermocouple by ion aeam sputtering deposition technique, and the protective film covers

Substrate region surface where lid film thermocouple.

Implement film temperature sensor and preparation method of the invention, has the advantages that the present invention uses ion

Beam sputter-deposition technology prepares film temperature sensor, and each layer film density of preparation is high, adhesive force is strong, the thin film thermoelectric of plating

Dual thickness is small, fast to the response time of temperature, and small in size after thermocouple encapsulation, and measurement accuracy is high.

Detailed description of the invention

Fig. 1 is the film temperature sensor structural schematic diagram according to the preferred embodiment of the present invention;

Fig. 2 is the preparation method flow chart according to the film temperature sensor of the preferred embodiment of the present invention;

Fig. 3 is the structural schematic diagram of six target platform double-ion beam reactive sputter-deposition equipment.

Specific embodiment

In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention

In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is

A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people

Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.

The various structural schematic diagrams according to the embodiment of the present disclosure are shown in the attached drawings.These figures are not drawn to scale

, wherein some details are magnified for the purpose of clear expression, and some details may be omitted.It is shown in the drawings

Various regions, the shape of layer and relative size, positional relationship between them are merely exemplary, in practice may be due to system

It makes tolerance or technical restriction and is deviated, and those skilled in the art may be additionally designed as required with difference

Shape, size, the regions/layers of relative position.

In the context of the disclosure, when one layer/element is referred to as located at another layer/element "upper", which can

May exist intermediate layer/element on another layer/element or between them.In addition, if in a kind of direction

In one layer/element be located at another layer/element "upper", then when turn towards when, which can be located at another layer/member

Part "lower".

Referring to Fig. 1, for according to the film temperature sensor structural schematic diagram of the preferred embodiment of the present invention.As shown in Figure 1,

The film temperature sensor includes at least: substrate 1, film thermocouple, pad film 5 and protective film 7.

Wherein, substrate 1 is preferably but not limited to silicon carbide substrate.

Film thermocouple is formed on the substrate 1 using ion aeam sputtering deposition technique.The film thermocouple includes just very hot

Galvanic couple film 2 and cathode thermocouple film 3, wherein the inner end of positive thermocouple film 2 and cathode thermocouple film 3 docks and to form thermoelectricity and couple

Point 4.Film thermocouple with a thickness of 0.5~0.8 μm.In a preferred embodiment of the invention, film thermocouple is preferred but unlimited

In using thermocouple material shown in table 1, specific selection is exported according to the use temperature and signal of film temperature sensor

It is required that determining.

Table 1

Graduation Number

B

C

D

E

J

Material

Platinum rhodium 30- platinum rhodium 6

W-Re 5- W-Re 26

W-Re 3- W-Re 25

Nickel chromium triangle-cupro-nickel

Iron/copper nickel

Graduation Number

K

N

R

S

T

Material

Nickel chromium triangle 10- nisiloy 3

Nickel chromium triangle silicon-nisiloy

Platinum rhodium 13- platinum

Platinum rhodium 10- platinum

Copper-cupro-nickel

Pad film 5 is by ion aeam sputtering deposition technique in the external connection end of positive thermocouple film 2 and cathode thermocouple film 3

It deposits, for being connect with external lead wire.Pad film 5 is preferably but not limited to.In the present embodiment, lead film 4 is by golden Au system

At.Although this gives a kind of specific pad membrane material, however, the present invention is not limited thereto, but can be using other suitable

Electrode material, such as aluminium cobalt alloy.5 surface of pad film can be coated with high temperature resistant inorganic glue material, such as inorganic silicon-aluminum

Silicate material.

Protective film 7 is then covered on film thermocouple by ion aeam sputtering deposition technique, and covers film thermocouple institute

On substrate region surface.The protective film 7 is preferably but not limited to earth silicon material.The protective film 7 can stop the oxygen in air

Erosion with steam to sensor improves the reliability and stability of film temperature sensor.

In the preferred embodiment of the invention, film temperature sensor further includes being formed by ion aeam sputtering deposition technique

Tantalum pentoxide insulation transition film 6 between film thermocouple and protective film 7.The Ta2O5Insulation transition film 6 is in order to slow

Subtract the mismatch of the protective layer 7 of subsequent preparation and the lattice parameter and thermal expansion coefficient of substrate 1 and thermocouple material, transition film

Thickness be about 150~180nm.

Referring to Fig. 2, for according to the preparation method flow chart of the film temperature sensor of the preferred embodiment of the present invention.Such as figure

Shown in 2, the present invention also provides a kind of preparation method of film temperature sensor, it can be used for preparing above-mentioned film temperature sensing

Device.The preparation method the following steps are included:

Firstly, in step sl, providing substrate 1.

Then, in step s 2, pass through ion aeam sputtering deposition technique film thermocouple on the substrate 1.The thin film thermoelectric

Even includes positive thermocouple film 2 and cathode thermocouple film 3, the inner end docking shape of the anode thermocouple film 2 and cathode thermocouple film 3

At thermal cross 4.Step S2 further comprises:

S2-1, positive thermocouple film photoresist is made on the substrate 1, and be fixed in work stage;

S2-2, the ion energy that ion beam is arranged are 500~700eV, and setting ion beam current density is 0.4~0.55mA/

cm2;And it is extracted into the background pressure of vacuum warehouse and is maintained at 3 × 10-3Pa and following;Be arranged work stage rotational velocity be 7~

9rpm, angle of deposit are 45 °;

S2-3, positive thermocouple target, the particle deposition for coming out positive thermocouple target as sputter are bombarded using ion source

On substrate, positive thermocouple film is formed;Then remove positive thermocouple film photoresist;

S2-4, cathode thermocouple film photoresist is made on substrate, and be fixed in work stage;

S2-5, cathode thermocouple target is bombarded using ion source, the particle deposition for coming out cathode thermocouple target as sputter

On substrate, cathode thermocouple film is formed;Then removal cathode thermocouple film photoresist.

Then, in step s3, by ion aeam sputtering deposition technique in positive thermocouple film 2 and cathode thermocouple film 3

External connection end on formed pad film 5.

Then, in step s 4, protective film 7 is formed on film thermocouple by ion aeam sputtering deposition technique, and is protected

Substrate region surface where cuticula 7 covers film thermocouple.

In a preferred embodiment of the invention, further include the step S3 ' executed between step S3 and step S4, by from

Beamlet sputter-deposition technology deposits tantalum pentoxide insulation transition film 6 on film thermocouple.Tantalum pentoxide insulation transition

Substrate region surface where film 6 also covers film thermocouple.It is protected described in plating in tantalum pentoxide insulation transition film 6 later

Film 7.

In another preferred embodiment of the invention, step S2~S4 intermediate ion source further includes target before bombarding target

Cleaning step bombards target material surface 2~4 minutes using low energy ion beam in the step, and to remove target material surface impurity, this is low

The ion energy E of energy ion beami=200~500eV, ion beam current density Jb=0.2~0.4mA/cm2.It is highly preferred that

Step S2~S4 intermediate ion source further includes pre-treatment step before bombarding target, using low energy ion beam to needing to plate in the step

The workpiece surface of film bombards 2~4 minutes, to increase workpiece surface adhesive force, the ion energy E of the low energy ion beami=200~

500eV, ion beam current density Jb=0.2~0.4mA/cm2

In a preferred embodiment of the invention, the positive thermocouple film 2 in film thermocouple and cathode thermocouple film 3 are distinguished

Using nickel chromium triangle and Nickel-Silicom thermocouple material.Nickel chromium-nickel silicon thermocouple, i.e., 3 thermocouple of nickel chromium triangle 10- nisiloy, Graduation Number K are mesh

The preceding maximum cheap metal thermocouple of dosage.The chemical component of positive nickel chromium triangle thermocouple material are as follows: Ni:Cr=90:10, cathode nisiloy

The chemical component of thermocouple material are as follows: Ni:Si=97:3 is -200~1300 DEG C using temperature.K-type thermocouple has linear

Spend, thermo-electromotive force is larger, high sensitivity, and stability and uniformity are preferable, and antioxygenic property is strong, it is cheap the advantages that, energy

For in oxidisability inert atmosphere.

Positive thermocouple film 2 in the film thermocouple of deposition is enabled in the present invention by ion aeam sputtering deposition technique

Reach 0.5~0.8 μm with the thickness of cathode thermocouple film 3.It is unable to accurately control in view of currently used thin film preparation process

Film deposition thickness, and film temperature sensor is to the more demanding of thickness, the present invention by many experiments and summary of experience, and

Influence of the ion energy and ion beam current of coupled ion beam sputter-deposition technique intermediate ion beam to film deposition rate, obtains

The optimal computed formula of nickel chromium triangle and Nickel-Silicom thermocouple deposition of thin films of material time.

The film sedimentation time t for the nickel chromium triangle thermocouple material wherein chosen in step S21It is calculated by following formula (1):

The film sedimentation time t for the Nickel-Silicom thermocouple material chosen in step S22It is calculated by following formula (2):

M is to preset film thickness in formula (1) and formula (2), that is, the thickness for the film thermocouple for needing to deposit, and unit is

nm.X is the ion energy of ion beam, unit eV.Calculate the film sedimentation time t obtained1And t2Unit be min.And make

Film sedimentation time is accurately set with the formula, when reaching default film thickness to control film, it is heavy in ion beam sputtering to need

Standard value, i.e. 100mA are set by ion beam current during product.

The present invention also verifies above-mentioned formula (1) and (2).With ion beam energy be respectively 400eV, 450eV,

500eV, 550eV, 600eV and 700eV, the thickness of preset film thermocouple are respectively 0.8 μm, 0.7 μm, 0.6 μm and 0.5 μ

M calculates separately out optimal film sedimentation time t1And t2.It is heavy using ion beam sputtering on the substrate 1 respectively and by experiment

Product technology plated film, setting ion beam current are 100mA, sputter angle θs=45 °, deposition angles θs=17 °, ion beam energy is respectively

400eV, 450eV, 500eV, 550eV, 600eV and 700eV, using above-mentioned calculated film sedimentation time t1And t2It sinks respectively

Product nickel chromium triangle thermocouple material and Nickel-Silicom thermocouple material, and measure gained film thickness.By comparing with preset thickness it is found that working as

When using ion energy as 450~550eV, the film thickness of deposition can be accurately controlled in the range of ± 2% by the present invention.

When using ion energy for 600~700eV, the film thickness of deposition can be accurately controlled in ± 5% range by the present invention

It is interior.

Referring to Fig. 3, being the structural schematic diagram of six target platform double-ion beam reactive sputter-deposition equipment.As shown in figure 3, this hair

The preparation method of bright film temperature sensor is preferably but not limited to using the six targets platform double-ion beam reactive sputter-deposition equipment

Preparation.The six targets platform double-ion beam reactive sputter-deposition equipment includes main ion source 21, auxiliary ion source 26, work stage 28 and can revolve

The six target platforms 24 turned.The two sides that main ion source 21 and auxiliary ion source 26 are located at vacuum chamber 29 are oppositely arranged, and the emission shaft of the two is flat

It goes and is spaced a predetermined distance.Six target platforms 24 are located in the middle part of vacuum chamber in 22 direction of the launch of ion beam in main ion source, and there are six tools

Target surface can be respectively used to fixed tantalum target, silica target, positive and negative thermocouple target and pad film target.Work stage 28 is used

In fixed substrate 1, in 27 direction of the launch of ion beam of auxiliary ion source, while being located at the ion beam of six target platforms 24 work target surface

On the direction that sputtering particle 25 deposits.The switchable baffle for blocking workpiece in work stage 28 is additionally provided in the work stage 28

20.As shown, six target platforms 24 are arranged with main ion source 21 in 45 degree, work stage 28 and auxiliary ion source 26 are in 45 degree of settings.

The preparation process of film temperature sensor is specifically described below with reference to the equipment of Fig. 3.In the embodiment with

Silicon carbide prepares substrate 1, successively plates NiCr, NiSi, Au, Ta2O5、SiO2Five kinds of films.

One, environmental preparation:

1, the Ar that working gas purity is 99.99%, the O that reaction gas purity is 99.99%2.Work stage rotation

Speed is 8rpm.

2, the substrate 1 of length × wide=10 × 5mm is fixed in work stage 28 as workpiece, by NiCr, NiSi, Au, Ta

And SiO2Target 23 be sequentially fixed on each target surface of six target platforms 24.

3, vacuum warehouse 21 is closed, is first slightly taken out with mechanical pump single machine, when vacuum degree reaches 10Pa, starting molecular pump two-shipper essence

It takes out, background vacuum is extracted into and is maintained at: 3 × 10-3Pa。

Two, substrate 1 is provided, surface is cleaned:

1, it is cleaned with mechanical polishing and conventional chemical and first deoils to substrate 1, decontamination, deoxygenates compound.

2, the baffle 20 for opening work stage bombards 1 surface 3min of substrate with the low-energy Ar-ion beam that auxiliary ion source 26 generates,

Substrate 1 and NiCr anode thermocouple film and NiSi cathode thermocouple film will be largely improved in the pitting that 1 surface of substrate is driven out of

And the adhesive force of Au pad film.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=0.35mA/

cm2

Three, NiCr anode thermocouple film is deposited:

1, six target platforms 24 of rotation select NiCr target;Positive thermocouple film photoresist is made on the substrate 1.

2, the baffle 20 for closing work stage bombards NiCr target material surface with the low-energy Ar-ion beam that main ion source 21 generates

3min removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

3, the baffle 20 for opening work stage bombards NiCr target, NiCr with the high-energy Ar ion beam that main ion source 21 generates

The particle deposition that target as sputter comes out on the substrate 1, generates NiCr anode thermocouple film.The ion energy of the high-energy Ar ion beam

Ei=700eV, ion beam current density Jb=0.55mA/cm2

Four, NiSi cathode thermocouple film is deposited:

1, six target platforms 24 of rotation select NiSi target;Remaining photoresist on workpiece is removed, makes cathode heat on the substrate 1

Galvanic couple film photoresist.

2, the baffle 20 for closing work stage bombards NiSi target material surface with the low-energy Ar-ion beam that main ion source 21 generates

3min removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

3, the baffle 20 for opening work stage bombards NiSi target, NiSi with the high-energy Ar ion beam that main ion source 21 generates

The particle deposition that target as sputter comes out on the substrate 1, generates NiSi cathode thermocouple film.The ion energy of the high-energy Ar ion beam

Ei=700eV, ion beam current density Jb=0.55mA/cm2

Five, Au pad film is deposited

1, six target platforms 24 of rotation select Au target, remove remaining photoresist on workpiece, and pad film light is made on workpiece

Photoresist.

2, the baffle 20 for closing work stage bombards Au target material surface with the low-energy Ar-ion beam that main ion source 21 generates

3min removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

3, the baffle 20 for opening work stage bombards work stage 3min with the low-energy Ar-ion beam that auxiliary ion source 26 generates, increases

Strong existing film surface adhesive force.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=0.35mA/

cm2

4, Au target is bombarded with the high-energy Ar ion beam that main ion source 21 generates, the particle deposition that Au target as sputter comes out exists

In the external connection end of NiCr anode thermocouple film and NiSi cathode thermocouple film, Au pad film is generated.The high-energy Ar ion beam from

Sub- ENERGY Ei=700eV, ion beam current density Jb=0.55mA/cm2

Six, Ta is deposited2O5Insulate transition film:

1, six target platforms 24 of rotation select Ta target;Remaining photoresist on workpiece is removed, and makes insulation transition film photoetching

Glue.

2, the baffle 20 for closing work stage bombards Ta target material surface with the low-energy Ar-ion beam that main ion source 21 generates

3min removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

3, the baffle 20 for opening work stage bombards Ta target, Ta target with the high-energy Ar ion beam that main ion source 21 generates

The O that the particle sputtered out and auxiliary ion source 26 generate2Ion beam reacts, and forms Ta2O5Compound deposition is in thin film thermoelectric

Where idol and film thermocouple on substrate region surface, Ta is generated2O5Insulate transition film.The ion energy of the high-energy Ar ion beam

Ei=700eV, ion beam current density Jb=0.55mA/cm2

Seven, SiO is deposited2Protective film:

1, six target platforms 24 of rotation select SiO2Quartz glass target;Remaining photoresist on workpiece is removed, and makes protection

Film photoresist.

2, the baffle 20 for closing work stage bombards SiO with the low-energy Ar-ion beam that main ion source 21 generates2Target material surface

3min removes target material surface impurity.The ion energy E of the low-energy Ar-ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

3, the baffle 20 for opening work stage bombards work stage 3min with the low-energy Ar-ion beam that auxiliary ion source 26 generates, increases

Strong Ta2O5Insulate transition film surface adhesive force.The ion energy E of the low energy ion beami=400eV, ion beam current density Jb=

0.35mA/cm2

4, SiO is bombarded with the high-energy Ar ion beam that main ion source 21 generates2Target, the particle that target as sputter comes out are formed

SiO2Compound deposition is in Ta2O5In the transition film that insulate, SiO is formed2Protective film.The ion energy E of the high-energy Ar ion beami=

Ion beam current density J is arranged in 700eVb=0.55mA/cm2

5, vacuum warehouse 29 is opened, work stage 28 is taken out, the remaining photoresist of workpiece surface is removed, film temperature sensing is made

Chip.

Double-ion beam reactive sputter-deposition (the Double Ion Bean Reactive Sputtering that the present invention uses

Deposition, abbreviation DIBRSD) technology, it is first to be cleaned with the working gas ion beam of low energy to target and substrate,

Target is bombarded to be filled with the main ion beam that the main ion source of working gas generates, the particle and be filled with reaction gas that target as sputter comes out

The auxiliary ion beam that the auxiliary ion source of body generates is chemically reacted, and generates stable compound deposition on substrate, generates chemical combination

Object film.It is with following distinguishing feature:

1, the stress of the good evenness of film, film is small and adhesive force is high, and optical property more repeats to stablize;Running parameter

Independent control freedom degree is big, and film growth, film microstructure and film lattice orientation can be controlled with nanoscale;

2, target particle energy is high, and the pellicle film density of deposition is high, impurity is few, high with the binding force of substrate;To target

Prerinse is carried out with substrate, the adhesive force of film and substrate can be improved;

3, numerous materials in addition to organic material and easy decomposing material are applicable in, non-environmental-pollution dry method plated film can be prepared

Alloy firm, sull, high-melting-point film and insulation film.

Therefore, using six target platform double-ion beam reactive sputter-deposition technologies, manufactured high performance thin film temperature sensing chip

It is small in size, precision is high, the response time is fast, temperature drift is small, stability is good, high reliablity, long service life, antivibration anti-interference shock resistance energy

Power is strong, is suitable for adverse circumstances, and manufacture craft is simple, does not have to high temperature ageing, and the production time is short, and overall target is better than magnetic control

Sputter the similar product of preparation.

Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;Although

Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used

To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features;

And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and

Range.

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