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一种对环境因素敏感的忆阻器的制备方法 【EN】Preparation method of memristor sensitive to environmental factors

申请(专利)号:CN201811188337.4国省代码:四川 51
申请(专利权)人:【中文】西南交通大学【EN】SOUTHWEST JIAOTONG University
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摘要:
【中文】本发明公开了一种对环境因素敏感的忆阻器的制备方法,具体包括如下步骤:S1:清洗衬底;S2:溅射沉积Cu2ZnSnSe4薄膜:在控溅射获得Cu2ZnSnSe4薄膜;S3:溅射沉积BiFeO3薄膜:经步骤S2处理后,在Cu2ZnSnSe4薄膜上磁控溅射获得BiFeO3薄膜;S4:制备上电极:在沉积好的BiFeO3薄膜表面沉积上电极,获得对环境因素敏感的忆阻器。本发明提供的对环境因素敏感的忆阻器的制备方法,步骤简单,可操作性强,适于产业化生产;所制备的忆阻器件,表现出优异的忆阻性能,器件结构简单、重复性好、成本低,在新型存储器、未来外太空的探索等电子器件领域具有很好的应用前景。 【EN】The invention discloses a preparation method of a memristor sensitive to environmental factors, which specifically comprises the following steps: s1: cleaning the substrate; s2: sputter deposition of Cu2ZnSnSe4Film formation: obtaining Cu by controlled sputtering2ZnSnSe4A film; s3: sputter deposition of BiFeO3Film formation: after the processing of step S2, in Cu2ZnSnSe4BiFeO is obtained by magnetron sputtering on the film3A film; s4: preparing an upper electrode: after the well-deposited BiFeO3And an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained. The preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared memristor device shows excellent memristor performance, is simple in structure, good in repeatability and low in cost, and has good application prospects in the fields of novel memories, electronic devices for future outer space exploration and the like.

主权项:
【中文】1.一种对环境因素敏感的忆阻器的制备方法,其特征在于:具体包括如下步骤: S1:清洗衬底:将基片清洗、吹干后放入磁控溅射室中; S2:溅射沉积CuZnSnSe薄膜:在磁控溅射靶枪上安装CuZnSnSe化合物靶材,Cu、Zn、Sn、Se原子比为2:1:1:4,设靶基距为8-12cm,在磁控溅射腔室本底抽真空后,通入高纯氩气作为工作气体,设置溅射气压为0.5~1.0Pa,衬底温度为200~300℃,溅射功率80~100W/cm,溅射时间为20~30min,获得CuZnSnSe薄膜; S3:溅射沉积BiFeO薄膜:经步骤S2处理后,在磁控溅射靶枪上安装BiFeO化合物靶材,Bi、Fe、O原子比为1:1:3,设置靶基距为8-12cm,对磁控溅射腔室抽本底真空后,通入高纯氩气作为工作气体,设置溅射气压为0.5~1.0Pa,衬底温度为室温,溅射功率为80~100W/cm,溅射时间为15~20min,获得BiFeO薄膜; S4:制备上电极:在沉积好的BiFeO薄膜表面沉积上电极,获得对环境因素敏感的忆阻器。 【EN】1. A preparation method of a memristor sensitive to environmental factors is characterized by comprising the following steps: the method specifically comprises the following steps: s1: cleaning a substrate: cleaning and drying the substrate, and then putting the substrate into a magnetron sputtering chamber; s2: sputter deposition of CuZnSnSeFilm formation: cu is arranged on a magnetron sputtering target gunZnSnSeA compound target material, wherein the atomic ratio of Cu, Zn, Sn and Se is 2:1:1:4, the target base distance is set to be 8-12cm, high-purity argon is introduced as working gas after the bottom of a magnetron sputtering chamber is vacuumized, the sputtering pressure is set to be 0.5-1.0 Pa,the substrate temperature is 200-300 ℃, and the sputtering power is 80-100W/cmSputtering for 20-30 min to obtain CuZnSnSeA film; s3: sputter deposition of BiFeOFilm formation: after the step S2, BiFeO is mounted on the magnetron sputtering target gunA compound target material, wherein the atomic ratio of Bi, Fe and O is 1:1:3, the target base distance is set to be 8-12cm, a magnetron sputtering chamber is vacuumized, high-purity argon is introduced to serve as working gas, the sputtering pressure is set to be 0.5-1.0 Pa, the substrate temperature is set to be room temperature, and the sputtering power is 80-100W/cmSputtering for 15-20 min to obtain BiFeOA film; s4: preparing an upper electrode: after the well-deposited BiFeOAnd an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained.


说明书

【中文】

一种对环境因素敏感的忆阻器的制备方法

技术领域

本发明属于半导体薄膜器件领域,具体涉及一种对环境因素敏感的忆阻器的制备方法。

背景技术

随着信息数字化、计算机技术、互联网以及便携式电子产品的快速发展,电子器件在生活中的作用越来越重要,我们每天都要通过电子器件处理和接受海量的信息。因此,人们对电子器件的性能提出了更高的要求,如快的速度,高的存储容量,长的使用寿命,小的体积等等。然而,对存储器件而言,目前基于电荷存储的传统半导体存储器件因为尺寸的缩小而遇到严峻的物理理论和制备技术的双重限制,因而无法满足当今信息技术迅速发展的需要。因此突破现有存储技术的瓶颈对将来信息技术的进一步发展具有重大的意义。目前,存储器大体可以分为两类,即:A、易失性的随机存储器;B、非易失性存储器。忆阻随机存储器(Resistive Switching Random Access Memory,简称RRAM)是近年来新型的一种基于电流控制电阻变化的非易失性存储器。忆阻器具有结构简单,存储单元小,读写速度快且制备技术相对简单等优点。该存储器件的基本存储单元是:顶电极/介电层/底电极的三明治结构,研究者认为RRAM是下一代最具应用前景的新概念存储器件之一。

在忆阻器的研究中,室温下具有存储特性的存储器件备受研究者的关注。同时,增加额外的参数提高忆阻器件存储特性能也是解决当前对电子产品功能需求一条重要途径。环境因素敏感的忆阻器具有一个特殊的忆阻效应,受到了科研人员的广泛关注,电子器件在复杂环境下(如黑暗、普通、加光、加热)下的使用越来越重要,应用前景在将来外太空的探索有非常重要的作用,通过环境条件调控忆阻器的特性可以明显增加该器件的存储态,提高存储器件的存储密度。该调控方法易于调控,也是提高存储性能最简单,廉价的途径之一。

因此,研究环境因素敏感的忆阻器制备方法将具有重大的意义,很可能为开发新型电子器件,为实现性能更优异的电子器件的发展提供新的途径。

发明内容

本发明的目的是解决上述问题,开发了一种对环境因素敏感的忆阻器的制备方法,该器件结构简单、性能优异、稳定、重复性好,同时对环境因素敏感,增加了存储器的控制条件,提高了存储器件的存储密度。在新型多态存储电子器件领域及未来多功能电子器件的探索中具有良好的应用前景。

为解决上述技术问题,本发明的技术方案是:一种对环境因素敏感的忆阻器的制备方法,具体包括如下步骤:

S1:清洗衬底:将基片清洗、吹干后放入磁控溅射室中;

S2:溅射沉积Cu2ZnSnSe4薄膜:在磁控溅射靶枪上安装Cu2ZnSnSe4化合物靶材,Cu、Zn、Sn、Se原子比为2:1:1:4,设靶基距为8-12cm,对磁控溅射腔室本底抽真空后,通入高纯氩气作为工作气体,设置溅射气压为0.5~1.0Pa(溅射气压的大小直接会影响薄膜的致密度),衬底温度为200~300℃(衬底温度高低会影响晶向分布),溅射功率80~100W/cm2,溅射时间为20~30min,获得Cu2ZnSnSe4薄膜;

S3:溅射沉积BiFeO3薄膜:经步骤S2处理后,在磁控溅射靶枪上安装BiFeO3化合物靶材,Bi、Fe、O原子比为1:1:3,设置靶基距为8-12cm,对磁控溅射腔室抽本底真空后,通入高纯氩气作为工作气体,设置溅射气压为0.5~1.0Pa,衬底温度为室温,溅射功率为80~100W/cm2,溅射时间为15~20min,获得BiFeO3薄膜;

S4:制备上电极:在沉积好的BiFeO3薄膜表面沉积上电极,获得对环境因素敏感的忆阻器。

上述技术方案中,所述步骤S1中,清洗采用的具体方法为:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10~20min,基片使用氮气吹干后放入磁控溅射室中。

上述技术方案中,所述步骤S2中,将磁控溅射腔室本底真空度抽至3.6x10-4Pa,高纯氩气纯度为99.999%。

上述技术方案中,所述步骤S3中,将磁控溅射腔室本底真空度抽至3.6x10-4Pa,高纯氩气纯度为99.999%。

上述技术方案中,所述步骤S4中,在沉积好的BiFeO3薄膜表面覆盖具有孔径1mm的金属掩模版,采用直流溅射法沉积上电极。上电极可以为条形、圆形等形状的电极,在本发明中沉积圆形的上电极。

上述技术方案中,所述步骤S2中,BiFeO3薄膜的厚度为150~200nm。

上述技术方案中,所述步骤S3中,Cu2ZnSnSe4薄膜的厚度400~600nm。

上述技术方案中,所述基片为覆盖有FTO薄膜的基底,所述基底为平整玻璃或石英。

上述技术方案中,所述步骤S4中,上电极采用银。

本发明提供的对环境因素敏感的忆阻器的制备方法,其创新点在于:尽管目前关于电阻开关的报道有很多,但很少有材料同时对多种额外的条件敏感,在本发明中中,使用Cu2ZnSnSe4和BiFeO3作为电阻开关的功能层,制备了具有Ag/BiFeO3/Cu2ZnSnSe4/FTO结构的电子器件可同时对多种条件敏感(黑暗,普通,加光,加热等),为发展下一代新概念多功能存储器奠定了良好的基础。

本发明的有益结果是:本发明提供的对环境因素的忆阻器的制备方法,步骤简单,可操作性强,适于产业化生产;所制备的忆阻器件,表现出优异的忆阻性能,器件结构简单、重复性好、成本低,在新型存储器、未来外太空的探索等电子器件领域具有很好的应用前景。

附图说明:

图1是实施例制备的忆阻器件(结构为Ag/BFO/CZTSe/FTO)的XRD图谱;

图2是实施例制备的忆阻器件在不同测试条件下的电流-电压特征曲线;

图3是实施例制备的忆阻器件在不同测试条件下的阻态-时间特征曲线;

图4是实施例制备的忆阻器件在不同测试条件下的阻态-圈数特征曲线。

具体实施方式

下面结合附图和具体实施例对本发明做进一步的说明:

本发明提供的一种对环境因素敏感的忆阻器的制备方法,包括以下步骤:

S1:清洗衬底:以覆盖有FTO薄膜的平整玻璃作为基片,将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声10~20min,再使用氮气吹干后放入磁控溅射室中,备用;

S2:溅射沉积Cu2ZnSnSe4(CZTSe)薄膜:在磁控溅射靶枪上安装Cu2ZnSnSe4化合物靶材,Cu、Zn、Sn、Se原子比为2:1:1:4,设靶基距为8-12cm,将磁控溅射腔室本底真空度抽至3.6×10-4Pa,在通入纯度为99.999%的高纯氩气作为工作气体,设置衬底温度为200℃,将溅射室本底真空度抽至小于1×10-3Pa,通入纯度为99.999%的氩气作为工作气体,设置溅射气压为0.6Pa,衬底温度为200℃,溅射功率80W/cm2,溅射时间为20min,获得Cu2ZnSnSe4薄膜;

S3:溅射沉积BiFeO3(BFO)薄膜:经步骤S2处理后,在磁控溅射靶枪上安装BiFeO3化合物靶材,Bi、Fe、O原子比为1:1:3,设置靶基距为8-12cm,将磁控溅射腔室本底真空度抽至3.6×10-4Pa,在通入纯度为99.999%的高纯氩气作为工作气体,设置衬底温度为200℃,将溅射室本底真空度抽至小于1×10-3Pa,通入纯度为99.999%的氩气作为工作气体,设置溅射气压为0.8Pa,溅射功率为80W/cm2,溅射时间为20min,获得BiFeO3薄膜;

S4:制备上电极:在沉积好的BiFeO3薄膜表面覆盖上具有孔径~1mm的金属掩模版,采用直流溅射法沉积圆形的Ag电极。

如图1所示,是本实施例制得的Ag/BFO/CZTSe/FTO薄膜的XRD图谱。从图1中可知24度附近的最强峰为CZTSe的特征峰,其择优取向为(110)。29度附近发现BFO最强的的特征峰,其择优取向为(111),43度附近发现Ag元素的衍射峰,其择优取向为(200),63度附近发现SnO2的最强峰,其择优取向为(111),从XRD的图谱可以看出,该器件无其它杂峰。

如图2所示,是本实施例制得的器件在不同的测试条件下的电流-电压(I-V)特征曲线。其中图(a)是普通条件下的电流-电压(I-V)特征曲线。图(b)是黑暗条件下的电流-电压(I-V)特征曲线。图(c)是加热到400K条件下的电流-电压(I-V)特征曲线。可以从图2中明显看出,该器件在不同测试条件下呈现出不同的电流-电压(I-V)特征曲线。

如图3所示,是本实施例制得的器件在不同的测试条件下,工作电压1.025V时的电阻-时间的特征曲线。其中图(a)是普通条件下的阻态-时间特征曲线。图(b)是黑暗条件下的阻态-时间特征曲线。图(c)是加热到400K条件下的阻态-时间特征曲线。从图3中可以看出在相同的工作电压下,不同的测试环境对该件阻态变化的影响较为明显。

如图4所示,是本实施例制得的器件在模拟的可变测试环境下的阻态-圈数的特征曲线,从图(a)可以看出环境对该器件的电阻变化较为明显,可以通过环境调控实现多态存储。图(b)是该器件在400K温度下测试500圈的阻态-圈数图。

综上所述,本发明提供的对环境因素敏感的忆阻器的制备方法,步骤简单,可操作性强,适于产业化生产;制得的器件结构简单、性能优异、稳定、重复性好,对环境因素敏感,具有很好的应用前景,值得在业内推广。

本领域的普通技术人员将会意识到,这里所述的实施例是为了帮助读者理解本发明的原理,应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。

【EN】

Preparation method of memristor sensitive to environmental factors

Technical Field

The invention belongs to the field of semiconductor thin film devices, and particularly relates to a preparation method of a memristor sensitive to environmental factors.

Background

With the rapid development of information digitization, computer technology, the internet and portable electronic products, the role of electronic devices in life becomes more and more important, and a large amount of information needs to be processed and received by the electronic devices every day. Therefore, higher demands are made on the performance of electronic devices, such as fast speed, high storage capacity, long service life, small volume, and the like. However, for memory devices, conventional semiconductor memory devices based on charge storage currently suffer from severe physical theory and dual limitations of manufacturing technology due to the shrinking size, and thus cannot meet the rapid development of information technology today. Therefore, the breakthrough of the bottleneck of the existing storage technology has great significance for the further development of the information technology in the future. Currently, memories can be broadly divided into two categories, namely: A. a volatile random access memory; B. a non-volatile memory. A memristive Switching Random Access Memory (RRAM) is a novel nonvolatile Memory based on current control of resistance change in recent years. The memristor has the advantages of simple structure, small storage unit, high reading and writing speed, relatively simple preparation technology and the like. The basic memory cells of the memory device are: the sandwich structure of top electrode/dielectric layer/bottom electrode, RRAM is considered by researchers to be one of the most promising new concept memory devices of the next generation.

In the research of memristors, memory devices having memory characteristics at room temperature are receiving the attention of researchers. Meanwhile, adding additional parameters to improve the memory characteristics of the memristive device is also an important way for solving the current functional requirements of electronic products. The memristor sensitive to environmental factors has a special memristive effect and is widely concerned by scientific researchers, electronic devices are more and more important to use in complex environments (such as darkness, common conditions, light adding and heating), application prospects play a very important role in future outer space exploration, the storage state of the devices can be obviously increased by regulating and controlling the characteristics of the memristor through environmental conditions, and the storage density of a storage device is improved. The regulation and control method is easy to regulate and control, and is one of the simplest and cheap ways for improving the storage performance.

Therefore, the method for researching the preparation method of the memristor sensitive to the environmental factors has great significance, and a new way is probably provided for developing a novel electronic device and realizing the development of an electronic device with more excellent performance.

Disclosure of Invention

The invention aims to solve the problems and develop a preparation method of a memristor sensitive to environmental factors, the memristor is simple in structure, excellent in performance, stable and good in repeatability, and is sensitive to the environmental factors, the control conditions of a memory are increased, and the storage density of the memory device is improved. The method has good application prospect in the field of novel multi-state storage electronic devices and the exploration of future multifunctional electronic devices.

In order to solve the technical problems, the technical scheme of the invention is as follows: a preparation method of a memristor sensitive to environmental factors specifically comprises the following steps:

s1: cleaning a substrate: cleaning and drying the substrate, and then putting the substrate into a magnetron sputtering chamber;

s2: sputter deposition of Cu2ZnSnSe4Film formation: cu is arranged on a magnetron sputtering target gun2ZnSnSe4The compound target material comprises a Cu, Zn, Sn and Se atomic ratio of 2:1:1:4, a target base distance of 8-12cm, high-purity argon as working gas is introduced after the bottom of a magnetron sputtering chamber is vacuumized, the sputtering pressure is set to be 0.5-1.0 Pa (the sputtering pressure directly influences the density of a film), the substrate temperature is 200-300 ℃ (the substrate temperature influences the crystal orientation distribution), and the sputtering power is 80-100W/cm2Sputtering for 20-30 min to obtain Cu2ZnSnSe4A film;

s3: sputter deposition of BiFeO3Film formation: after the step S2, BiFeO is mounted on the magnetron sputtering target gun3A compound target material, wherein the atomic ratio of Bi, Fe and O is 1:1:3, the target base distance is set to be 8-12cm, a magnetron sputtering chamber is vacuumized, high-purity argon is introduced to serve as working gas, the sputtering pressure is set to be 0.5-1.0 Pa, the substrate temperature is set to be room temperature, and the sputtering power is 80-100W/cm2Sputtering for 15-20 min to obtain BiFeO3A film;

s4: preparing an upper electrode: after the well-deposited BiFeO3And an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained.

In the above technical solution, in the step S1, the specific method for cleaning is as follows: and sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively carrying out ultrasonic cleaning for 10-20 min, blow-drying the substrate by using nitrogen, and putting the substrate into a magnetron sputtering chamber.

In the above technical solution, in the step S2, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6x10-4Pa, and the purity of the high-purity argon is 99.999 percent.

In the above technical solution, in the step S3, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6x10-4Pa, and the purity of the high-purity argon is 99.999 percent.

In the above technical solution, in the step S4, the deposited BiFeO is3The surface of the film is covered with a metal mask plate with the aperture of 1mm, and an upper electrode is deposited by a direct current sputtering method. The upper electrode may be a bar-shaped, circular, or the like electrode, and a circular upper electrode is deposited in the present invention.

In the above technical solution, in the step S2, BiFeO is obtained3The thickness of the film is 150 to 200 nm.

In the above technical solution, in the step S3, Cu2ZnSnSe4The thickness of the film is 400 to 600 nm.

In the above technical scheme, the substrate is a substrate covered with an FTO thin film, and the substrate is flat glass or quartz.

In the above technical solution, in the step S4, the upper electrode is made of silver.

The preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the innovation points that: although there are many current reports on resistive switching, few materials are simultaneously sensitive to a variety of additional conditions, and in the present invention, Cu is used2ZnSnSe4And BiFeO3As the functional layer of the resistance switch, Ag/BiFeO with is prepared3/Cu2ZnSnSe4The electronic device with the FTO structure can be sensitive to various conditions (darkness, common, light adding, heating and the like) at the same time, and lays a good foundation for developing a next-generation new-concept multifunctional memory.

The beneficial results of the invention are: the preparation method of the memristor for the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared memristor device shows excellent memristor performance, is simple in structure, good in repeatability and low in cost, and has good application prospects in the fields of novel memories, electronic devices for future outer space exploration and the like.

Description of the drawings:

FIG. 1 is an XRD spectrum of a memristive device (with the structure of Ag/BFO/CZTSe/FTO) prepared in an example;

FIG. 2 is a current-voltage characteristic curve of a memristive device prepared in an example under different test conditions;

FIG. 3 is a resistance state-time characteristic curve of a memristive device prepared in an example under different test conditions;

fig. 4 is a resistance state-turn number characteristic curve of the memristive device prepared in the example under different test conditions.

Detailed Description

The invention is further described with reference to the following figures and specific embodiments:

the invention provides a preparation method of a memristor sensitive to environmental factors, which comprises the following steps:

s1: cleaning a substrate: taking flat glass covered with an FTO film as a substrate, sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, performing ultrasonic treatment for 10-20 min respectively, blow-drying by using nitrogen, and putting into a magnetron sputtering chamber for later use;

s2: sputter deposition of Cu2ZnSnSe4(CZTSe) film: cu is arranged on a magnetron sputtering target gun2ZnSnSe4A compound target material with the atomic ratio of Cu, Zn, Sn and Se of 2:1:1:4, the target base distance of 8-12cm, and the background vacuum degree of a magnetron sputtering chamber is pumped to 3.6 multiplied by 10-4Pa, introducing high-purity argon with the purity of 99.999 percent as working gas, setting the substrate temperature to be 200 ℃, and pumping the background vacuum degree of the sputtering chamber to be less than 1 multiplied by 10-3Pa, introducing argon with the purity of 99.999 percent as working gas, setting the sputtering pressure to be 0.6Pa, and placing the substrateThe temperature is 200 ℃, the sputtering power is 80W/cm2Sputtering for 20min to obtain Cu2ZnSnSe4A film;

s3: sputter deposition of BiFeO3(BFO) film: after the step S2, BiFeO is mounted on the magnetron sputtering target gun3A compound target material with the atomic ratio of Bi, Fe and O being 1:1:3, setting the target base distance to be 8-12cm, and pumping the background vacuum degree of a magnetron sputtering chamber to be 3.6 multiplied by 10-4Pa, introducing high-purity argon with the purity of 99.999 percent as working gas, setting the substrate temperature to be 200 ℃, and pumping the background vacuum degree of the sputtering chamber to be less than 1 multiplied by 10-3Pa, introducing argon with the purity of 99.999 percent as working gas, setting the sputtering pressure to be 0.8Pa and the sputtering power to be 80W/cm2Sputtering for 20min to obtain BiFeO3A film;

s4: preparing an upper electrode: after the well-deposited BiFeO3The surface of the film is covered with a metal mask plate with the aperture of 1mm, and a circular Ag electrode is deposited by a direct current sputtering method.

As shown in FIG. 1, the XRD pattern of the Ag/BFO/CZTSe/FTO film obtained in this example is shown. As can be seen from fig. 1, the strongest peak at around 24 degrees is a characteristic peak of CZTSe, and the preferred orientation thereof is (110). The most intense characteristic peak of BFO is found near 29 degrees, the preferred orientation is (111), the diffraction peak of Ag element is found near 43 degrees, the preferred orientation is (200), SnO is found near 63 degrees2The most intense peak of (a), which is preferentially oriented to (111), is free of other peaks as can be seen from the XRD pattern.

As shown in fig. 2, the current-voltage (I-V) characteristic curves of the devices prepared in this example under different test conditions are shown. Wherein the graph (a) is a current-voltage (I-V) characteristic curve under ordinary conditions. Graph (b) is a current-voltage (I-V) characteristic curve under dark conditions. Graph (c) is a current-voltage (I-V) characteristic curve for heating to 400K. As is apparent from fig. 2, the device exhibited different current-voltage (I-V) characteristics under different test conditions.

As shown in fig. 3, the resistance-time characteristic curves of the devices prepared in this example under different test conditions at an operating voltage of 1.025V are shown. Wherein the graph (a) is a resistance state-time characteristic curve under ordinary conditions. FIG. b is a resistance state-time characteristic curve under dark conditions. FIG. c is a resistance-time characteristic curve of heating to 400K. It can be seen from fig. 3 that under the same operating voltage, the influence of different test environments on the resistance state change of the element is more obvious.

As shown in fig. 4, the resistance-turn characteristic curve of the device manufactured in this embodiment in a simulated variable test environment is shown, and it can be seen from the graph (a) that the resistance change of the device by the environment is obvious, and multi-state storage can be realized by environment control. Graph (b) is a resistance state-to-turns graph of the device tested for 500 turns at a temperature of 400K.

In conclusion, the preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared device has the advantages of simple structure, excellent performance, stability, good repeatability, sensitivity to environmental factors, good application prospect and worth of popularization in the industry.

It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

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