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一种磁控溅射方法 【EN】A kind of magnetically controlled sputter method

申请(专利)号:CN201811349077.4国省代码:湖南 43
申请(专利权)人:【中文】长沙创恒机械设备有限公司【EN】Changsha Chuangheng Machinery Equipment Co., Ltd.
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摘要:
【中文】本发明提出了一种磁控溅射方法,所述方法包括如下步骤:步骤10:将待加工件移入工艺腔室内并放置于基座上;步骤20:将沉积腔室内的金属靶和绝缘靶的角度调整到预设角度,调节金属靶与绝缘靶到基板的距离到预设距离;步骤30:对腔室进行抽真空,对抽完真空后的腔室通入预设气体,使腔室内的气压满足预设要求;步骤40:检测腔室内的气压是否满足预设要求,如果满足,则进行步骤50,如果不满足则返回步骤30;步骤50:打开金属靶的直流电源和绝缘靶的射频电源,对所述待加工件进行磁控溅射。采用本发明的方法通过调控基板与靶材之间的距离,实现了对薄膜质量的调控。 【EN】Paragraph:The invention proposes a kind of magnetically controlled sputter methods, and described method includes following steps: step 10: workpiece to be added being moved into processing chamber and is placed on pedestal;Step 20: the angle of the metallic target of deposition chamber and insulating storage surface being adjusted to predetermined angle, metallic target is adjusted and arrives pre-determined distance at a distance from insulating storage surface to substrate;Step 30: chamber being vacuumized, pre-set gas is passed through to the chamber after vacuum is exhausted, the indoor air pressure of chamber is made to meet preset requirement;Step 40: whether the indoor air pressure of test chamber meets preset requirement, if it is satisfied, then carrying out step 50, return step 30 if being unsatisfactory for;Step 50: opening the DC power supply of metallic target and the radio-frequency power supply of insulating storage surface, magnetron sputtering is carried out to the workpiece to be added.Using method of the invention by regulation the distance between substrate and target, the regulation to film quality is realized.Image:

主权项:
【中文】1.一种磁控溅射方法,其特征在于,所述方法包括如下步骤: 步骤10:将待加工件移入工艺腔室内并放置于基座上; 步骤20:将沉积腔室内的金属靶和绝缘靶的角度调整到预设角度,调节金属靶与绝缘靶到基板的距离到预设距离; 步骤30:对腔室进行抽真空,对抽完真空后的腔室通入预设气体,使腔室内的气压满足预设要求; 步骤40:检测腔室内的气压是否满足预设要求,如果满足,则进行步骤50,如果不满足则返回步骤30; 步骤50:打开金属靶的直流电源和绝缘靶的射频电源,对所述待加工件进行磁控溅射。 【EN】1. a kind of magnetically controlled sputter method, which is characterized in that described method includes following steps: Step 10: workpiece to be added being moved into processing chamber and is placed on pedestal; Step 20: the angle of the metallic target of deposition chamber and insulating storage surface being adjusted to predetermined angle, adjusts metallic target and insulation Target is to the distance of substrate to pre-determined distance; Step 30: chamber being vacuumized, pre-set gas is passed through to the chamber after vacuum is exhausted, meets the indoor air pressure of chamber Preset requirement; Step 40: whether the indoor air pressure of test chamber meets preset requirement, if it is satisfied, then step 50 is carried out, if be unsatisfactory for Then return step 30; Step 50: opening the DC power supply of metallic target and the radio-frequency power supply of insulating storage surface, magnetron sputtering is carried out to the workpiece to be added.


说明书

【中文】

一种磁控溅射方法

技术领域

本发明涉及薄膜制备技术领域,尤其涉及一种磁控溅射方法。

背景技术

PVD(物理气相沉积)作为一种薄膜沉积技术,主要用于各种功能薄膜的沉积,被广泛应用于集成电路、太阳能电池、LED、平板显示等泛半导体领域。溅射过程中薄膜的质量与基板与靶材之间的间距密切相关。

鉴于上述原因,本发明提出一种通过调控基板与靶材之间的间距来调控薄膜质量的方法。

发明内容

本发明的主要目的在于提供一种磁控溅射方法。

为实现上述目的,本发明提供的一种磁控溅射方法,所述方法包括如下步骤:

步骤10:将待加工件移入工艺腔室内并放置于基座上;

步骤20:将沉积腔室内的金属靶和绝缘靶的角度调整到预设角度,调节金属靶与绝缘靶到基板的距离到预设距离;

步骤30:对腔室进行抽真空,对抽完真空后的腔室通入预设气体,使腔室内的气压满足预设要求;

步骤40:检测腔室内的气压是否满足预设要求,如果满足,则进行步骤50,如果不满足则返回步骤30;

步骤50:打开金属靶的直流电源和绝缘靶的射频电源,对所述待加工件进行磁控溅射。

优选地,所述步骤40包括:按预设时间间隔,循环检测所述工艺腔室的真空状态。

优选地,所述步骤50包括:

步骤50-1:对所述待加工件进行预溅射;

步骤50-2:对所述待加工件进行主溅射。

优选地,所述步骤50-1包括:

将挡板移至靶材与所述待加工件之间;

在所述工艺腔室内通入惰性气体;

进行预溅射,以对所述靶材的表面进行预处理。

优选地,所述惰性气体包括氩气,其中,氩气的流量为20sccm;所述预溅射包括:

直流电源施加100W的溅射功率和射频电源施加100W的溅射功率进行预溅射,持续时间为30分钟。

优选地,所述步骤50-2包括:

将挡板从靶材与所述待加工件之间移开;

对所述待加工件进行主溅射以在所述待加工件上形成薄膜。

优选地,所述主溅射包括:直流电源施加100W的溅射功率以及射频电源施加50W的溅射功率进行主溅射,持续时间为1h。

优选地,所述步骤20中的基板与金属板为10cm以及基板与绝缘板的间距为15cm。

本发明的有益效果是:采用本发明的方法通过调控基板与靶材之间的距离,实现了对薄膜质量的调控。

具体实施方式

下面结合具体实施例对本发明实施例解决的技术问题、所采用的技术方案以及实现的技术效果进行清楚、完整的描述。显然,所描述的实施例仅仅是本申请的一部分实施例,并不是全部实施例。基于本申请中的实施例,本领域普通技术人员在不付出创造性劳动的前提下,所获得的所有其它等同或明显变型的实施例均落在本发明的保护范围内。本发明实施例可以按照权利要求中限定和涵盖的多种不同方式来具体化。

需要说明的是,在下面的描述中,为了方便理解,给出了许多具体细节。但是很明显,本发明的实现可以没有这些具体细节。

需要说明的是,在没有明确限定或不冲突的情况下,本发明中的各个实施例及其中的技术特征可以相互组合而形成技术方案。

本发明提供的一种磁控溅射方法,所述方法包括如下步骤:

步骤10:将待加工件移入工艺腔室内并放置于基座上;

步骤20:将沉积腔室内的金属靶和绝缘靶的角度调整到预设角度,调节金属靶与绝缘靶到基板的距离到预设距离;

步骤30:对腔室进行抽真空,对抽完真空后的腔室通入预设气体,使腔室内的气压满足预设要求;

步骤40:检测腔室内的气压是否满足预设要求,如果满足,则进行步骤50,如果不满足则返回步骤30;

步骤50:打开金属靶的直流电源和绝缘靶的射频电源,对所述待加工件进行磁控溅射。

本实施例中溅射过程中的气压控制在2.0Pa,远超过常规磁控溅射的工作气压,这样可以增大金属靶溅射处的气相=靶原子与惰性气体碰撞的几率,通过与惰性气体碰撞而形核并生长为一定尺寸大小的金属纳米粒子。

进一步地,所述步骤40包括:按预设时间间隔,循环检测所述工艺腔室的真空状态。

进一步地,所述步骤50包括:

步骤50-1:对所述待加工件进行预溅射;

步骤50-2:对所述待加工件进行主溅射。

进一步地,所述步骤50-1包括:

将挡板移至靶材与所述待加工件之间;

在所述工艺腔室内通入惰性气体;

进行预溅射,以对所述靶材的表面进行预处理。

进一步地,所述惰性气体包括氩气,其中,氩气的流量为20sccm;所述预溅射包括:

直流电源施加100W的溅射功率和射频电源施加100W的溅射功率进行预溅射,持续时间为30分钟。

进一步地,所述步骤50-2包括:

将挡板从靶材与所述待加工件之间移开;

对所述待加工件进行主溅射以在所述待加工件上形成薄膜。

进一步地,所述主溅射包括:直流电源施加100W的溅射功率以及射频电源施加50W的溅射功率进行主溅射,持续时间为1h。

进一步地,所述步骤20中的基板与金属板为10cm以及基板与绝缘板的间距为15cm。

本发明的有益效果是:采用本发明的方法通过调控基板与靶材之间的距离,实现了对薄膜质量的调控。

以上仅为本发明的优选实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。

【EN】

A kind of magnetically controlled sputter method

Technical field

The present invention relates to technical field of film preparation more particularly to a kind of magnetically controlled sputter methods.

Background technique

PVD (physical vapour deposition (PVD)) is used as a kind of film deposition techniques, is mainly used for the deposition of various function films, wide

It is general to be applied to the general semiconductor fields such as integrated circuit, solar battery, LED, FPD.In sputtering process the quality of film with

Spacing between substrate and target is closely related.

In view of the foregoing, the present invention proposes that a kind of spacing by between regulation substrate and target regulates and controls film quality

Method.

Summary of the invention

The main purpose of the present invention is to provide a kind of magnetically controlled sputter methods.

To achieve the above object, a kind of magnetically controlled sputter method provided by the invention, described method includes following steps:

Step 10: workpiece to be added being moved into processing chamber and is placed on pedestal;

Step 20: the angle of the metallic target of deposition chamber and insulating storage surface is adjusted to predetermined angle, adjust metallic target with

Insulating storage surface is to the distance of substrate to pre-determined distance;

Step 30: chamber being vacuumized, pre-set gas is passed through to the chamber after vacuum is exhausted, makes the indoor air pressure of chamber

Meet preset requirement;

Step 40: whether the indoor air pressure of test chamber meets preset requirement, if it is satisfied, then step 50 is carried out, if not

Meet then return step 30;

Step 50: opening the DC power supply of metallic target and the radio-frequency power supply of insulating storage surface, magnetic control is carried out to the workpiece to be added

Sputtering.

Preferably, the step 40 includes: and is spaced at preset timed intervals, the vacuum state of processing chamber described in cycle detection.

Preferably, the step 50 includes:

Step 50-1: pre-sputtering is carried out to the workpiece to be added;

Step 50-2: main sputtering is carried out to the workpiece to be added.

Preferably, the step 50-1 includes:

Baffle is moved between target and the workpiece to be added;

Inert gas is passed through in the processing chamber;

Pre-sputtering is carried out, is pre-processed with the surface to the target.

Preferably, the inert gas includes argon gas, wherein the flow of argon gas is 20sccm;The pre-sputtering includes:

The sputtering power that DC power supply applies the sputtering power of 100W and radio-frequency power supply applies 100W carries out pre-sputtering, continues

Time is 30 minutes.

Preferably, the step 50-2 includes:

Baffle is removed between target and the workpiece to be added;

Main sputtering is carried out to form film on the workpiece to be added to the workpiece to be added.

Preferably, the main sputtering includes: the sputtering power and radio-frequency power supply application 50W that DC power supply applies 100W

Sputtering power carries out main sputtering, duration 1h.

Preferably, the substrate in the step 20 and metal plate are 10cm and the spacing of substrate and insulation board is 15cm.

The beneficial effects of the present invention are: being realized using method of the invention by regulation the distance between substrate and target

Regulation to film quality.

Specific embodiment

The technical issues of embodiment of the present invention is solved combined with specific embodiments below, used technical solution and reality

Existing technical effect carries out clear, complete description.Obviously, described embodiment is only that a part of the application is implemented

Example, is not whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making the creative labor

Under the premise of, all other equivalent or obvious variant embodiment obtained is fallen within the scope of protection of the present invention.This hair

Bright embodiment can be embodied according to the multitude of different ways being defined and covered by claim.

It should be noted that in the following description, understanding for convenience, giving many details.But it is very bright

Aobvious, realization of the invention can be without these details.

It should be noted that in the absence of clear limitations or conflicts, each embodiment in the present invention and its

In technical characteristic can be combined with each other and form technical solution.

A kind of magnetically controlled sputter method provided by the invention, described method includes following steps:

Step 10: workpiece to be added being moved into processing chamber and is placed on pedestal;

Step 20: the angle of the metallic target of deposition chamber and insulating storage surface is adjusted to predetermined angle, adjust metallic target with

Insulating storage surface is to the distance of substrate to pre-determined distance;

Step 30: chamber being vacuumized, pre-set gas is passed through to the chamber after vacuum is exhausted, makes the indoor air pressure of chamber

Meet preset requirement;

Step 40: whether the indoor air pressure of test chamber meets preset requirement, if it is satisfied, then step 50 is carried out, if not

Meet then return step 30;

Step 50: opening the DC power supply of metallic target and the radio-frequency power supply of insulating storage surface, magnetic control is carried out to the workpiece to be added

Sputtering.

Pressure control in the present embodiment in sputtering process is in 2.0Pa, far more than the operating air pressure of conventional magnetron sputtering, this

Sample can increase gas phase=target atom at metallic target sputtering and the probability of inert gas collision, and colliding with inert gas

Forming core and the metal nanoparticle for being grown to certain size size.

Further, the step 40 includes: and is spaced at preset timed intervals, the vacuum shape of processing chamber described in cycle detection

State.

Further, the step 50 includes:

Step 50-1: pre-sputtering is carried out to the workpiece to be added;

Step 50-2: main sputtering is carried out to the workpiece to be added.

Further, the step 50-1 includes:

Baffle is moved between target and the workpiece to be added;

Inert gas is passed through in the processing chamber;

Pre-sputtering is carried out, is pre-processed with the surface to the target.

Further, the inert gas includes argon gas, wherein the flow of argon gas is 20sccm;The pre-sputtering includes:

The sputtering power that DC power supply applies the sputtering power of 100W and radio-frequency power supply applies 100W carries out pre-sputtering, continues

Time is 30 minutes.

Further, the step 50-2 includes:

Baffle is removed between target and the workpiece to be added;

Main sputtering is carried out to form film on the workpiece to be added to the workpiece to be added.

Further, the main sputtering includes: the sputtering power and radio-frequency power supply application 50W that DC power supply applies 100W

Sputtering power carry out main sputtering, duration 1h.

Further, the substrate in the step 20 with metal plate is 10cm and the spacing of substrate and insulation board is

15cm。

The beneficial effects of the present invention are: being realized using method of the invention by regulation the distance between substrate and target

Regulation to film quality.

The above is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair

Equivalent structure or equivalent flow shift made by bright description is applied directly or indirectly in other relevant technology necks

Domain is included within the scope of the present invention.

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