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一种基于氧化铒薄膜的忆阻器件及其制备方法 【EN】A kind of memory resistor and preparation method thereof based on erbium oxide film

申请(专利)号:CN201910051937.4国省代码:四川 51
申请(专利权)人:【中文】西南交通大学【EN】Southwest Jiaotong University
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摘要:
【中文】本发明公开了基于氧化铒薄膜的忆阻器件及其制备方法,所述忆阻器括顶电极、氧化铒薄膜以及底电极,所述氧化铒薄膜位于顶电极和底电极之间,其中,顶电极和底电极的材料分别为氧化铟锡或银。一种上述基于氧化铒薄膜的忆阻器的制备方法,包括以下步骤:S1:清洗衬底;S2:采用磁控溅射法,以氧化铟锡或银靶材为溅射源,在基片上溅射沉积底电极;S3:采用射频溅射法,以氧化铒靶材为溅射源,在底电极上沉积功能层Er2O3薄膜;S4:采用直流溅射法,以氧化铟锡或银靶材为溅射源,在氧化铒薄膜表面沉积上电极。器件结构简单、性能优异、稳定、重复性好,制备方法步骤简单,在新型存储器、振荡器等电子器件领域具有很好的应用前景。 【EN】Paragraph:The invention discloses the memory resistors and preparation method thereof based on erbium oxide film, the memristor includes top electrode, erbium oxide film and hearth electrode, the erbium oxide film is between top electrode and hearth electrode, wherein the material of top electrode and hearth electrode is respectively tin indium oxide or silver.A kind of preparation method of the above-mentioned memristor based on erbium oxide film, comprising the following steps: S1: cleaning substrate;S2: using magnetron sputtering method, using tin indium oxide or silver-colored target as sputtering source, the sputtering sedimentation hearth electrode on substrate;S3: radio frequency sputtering method, using erbium oxide target as sputtering source, the deposit functional layers Er on hearth electrode are used2O3Film;S4: using DC sputtering, using tin indium oxide or silver-colored target as sputtering source, deposits top electrode in erbium oxide film surface.Device architecture is simple, has excellent performance, stablizes, is reproducible, and preparation method step is simple, has a good application prospect in field of electronic devices such as novel memory devices, oscillators.Image:201910051937.GIF

主权项:
【中文】1.一种基于氧化铒薄膜的忆阻器,其特征在于:所述忆阻器包括顶电极、氧化铒薄膜以及底电极,所述氧化铒薄膜位于顶电极和底电极之间,其中,顶电极和底电极的材料分别为氧化铟锡或银,构成氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构。 【EN】1. a kind of memristor based on erbium oxide film, it is characterised in that: the memristor include top electrode, erbium oxide film with And hearth electrode, the erbium oxide film is between top electrode and hearth electrode, wherein the material of top electrode and hearth electrode is respectively Tin indium oxide or silver constitute tin indium oxide or silver/erbium oxide/tin indium oxide or silver-colored sandwich structure.


说明书

【中文】

一种基于氧化铒薄膜的忆阻器件及其制备方法

技术领域

本发明属于半导体薄膜器件领域,具体涉及一种基于氧化铒薄膜的忆阻器件及其制备方法。

背景技术

随着信息科学的发展,电子信息产业也得到了飞速的发展。电子器件作为信息产业的基础,电子元器件不断的技术革新是促进信息科学技术迅猛发展的强大动力。同时,人们对电子器件性能的要求也越来越高,无疑的这是现代人们对科学界提出的挑战。忆阻器作为一种新型电子元器件以其独特的非易失性的电学特性和优越的性能而备受研究者广泛地关注。并且忆阻器被认为是下一代新概念存储器中最具有应用前景的候选者之一。

忆阻器,全称记忆电阻。在1965-1971年间,科学家们已经在部分二元氧化物薄膜制备的金属-氧化物-金属三明治结构中观测到了电流(I)-电压(V)滞后曲线,然而当时研究者对其现象认识只停留在表面上,更不清楚这样器件表现出来的性质和用途。随后最早提出忆阻器概念的人是华裔的科学家蔡少棠教授,时间是1971年,当时蔡教授在研究电压(v)、电流(i)、磁通量(φ)以及电荷量(q)等四个基本量之间的关系时,根据数学逻辑关系的完整性提出忆阻器的存在。直到2008年,惠普公司的研究人员Dmitri B.Strukov等研究者在实验上证明了忆阻器的存在,并且将其研究论文发表在2008年的《Nature》期刊上,题为《寻找下落不明的忆阻器》文章与蔡少棠教授在1971年发表的《忆阻器,下落不明的电路元件》遥相呼应。忆阻器是典型的“三明治”(MIM)结构,其上下电极之间的功能层一般采用能够发生电阻转变的阻变层材料。在一个外加电压脉冲信号的作用下,该器件的电阻能在高阻态(HRS)和低阻态(LRS)之间发生转换,从而实现“0”和“1”的存储。

自从2008年以来,忆阻器以其独特的优点,诸如器件的结构简单,高的存储密度,低的功耗,快的读写速度等优点备受研究者的青睐。世界各国科学家掀起了忆阻器的研究高潮,不仅对忆阻器的工作原理,对忆阻器的信息存储的时效性和以及读写次数,开关比率被一次次刷新。研究者开始寻找性能更优,廉价,环保,且益于获取的忆阻材料,同时有大量的文献报道了具有忆阻的材料和忆阻器的制备方法。制备忆阻器的方法有:真空溅射、气相沉积、分子束外延、热蒸发、旋涂、电沉积和水热法等常规的薄膜制备工艺制备。对于无机材料一般采用真空溅射的方法制备器件,因为真空溅射相对比较廉价,可以大规模化生产,且制备的薄膜厚度可控,均匀性良好等优点。对于有机薄膜的制备一般采用旋涂的技术制备薄膜。研究者根据大量的实验证实了忆阻效应不仅依赖于使用的功能层材料,而且还依赖器件的电极材料。尽管有关忆阻器的报道有很多,但是还有许多的基础工作尚未解决,如合成忆阻效应更为明显的材料和更先进的薄膜制备技术,同时,进一步明确忆阻随机存储器的电阻转变机理。近几年以来,忆阻存储器己成为材料学、信息科学和物理学领域新的研究方向。忆阻器的发现对电子科学的发展将产生非常大的影响,特别是对电阻随机存储器的发展具有里程碑的作用。虽然目前有很多关于忆阻器的研究,但是要实现忆阻随机存储器产业化,还有许多的基础问题需要解决,如探索更先进的薄膜制备工艺性能更加优异的存储材料,忆阻效应更为明显的器件结构。进一步阐明忆阻随机存储器的阻变机理。

发明内容

本发明的目的是解决上述问题,提供一种基于氧化铒薄膜的忆阻器件及其制备方法,该忆阻器是一种实现了电极材料对RRAM存储器正负存储窗口的可控调节的电子元件,该器件结构简单、性能优异、稳定、重复性好,在下一代新概念存储器件领域具有很好的应用前景。

为解决上述技术问题,本发明的技术方案是:一种基于氧化铒薄膜的忆阻器,包括顶电极、氧化铒薄膜以及底电极,所述氧化铒薄膜位于顶电极和底电极之间,其中,顶电极和底电极的材料分别为氧化铟锡或银,构成氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构。

上述技术方案中,所述氧化铒薄膜的厚度为300~500nm。所述顶电极氧化铟锡或银的厚度优选400~600nm,所述底电极氧化铟锡或银的厚度优选400~600nm。

值得说明的是,氧化铒相比其它材料具有较高的介电常数,较大的禁带宽度和良好的热稳定性,并且其在可见光谱范围内具有很高的透明度。在本发明中,功能层氧化铒薄膜的厚度为300~500nm,薄膜的厚度影响了Set和Reset电压,进一步决定了开关的记忆窗口的大小,当功能层的厚度为300~500nm时该器件具有较大的记忆窗口。不同的电极材料影响了功能层内部导电通道的形成方向,导电通道的形成方向和界面势垒的变化共同调控了开关的方向和存储窗口,其中导电通道形成方向主要影响存储器存储窗口的正负。在电场的作用下,电极材料中的活性离子进入功能层形成导电通道进而实现该器件的阻态转变。通常情况下,选用活性的金属Ag和惰性的ITO或FTO作为电极材料。

一种上述基于氧化铒薄膜的忆阻器的制备方法,包括以下步骤:

S1、清洗衬底:洗净基片并吹干,备用;

S2、制备底电极:采用磁控溅射法,以氧化铟锡(ITO)或银靶材(Ag)为溅射源,在基片上溅射沉积底电极;

S3、制备功能层:采用射频溅射法,以氧化铒靶材为溅射源,在底电极上沉积功能层Er2O3薄膜;

S4、沉积顶电极:采用直流溅射法,以氧化铟锡或银靶材为溅射源,在氧化铒薄膜表面沉积上电极,制得氧化铟锡或银/氧化铒/氧化铟锡或银三明治结构的忆阻器。

上述技术方案中,所述步骤S1中,清洗的具体步骤是:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10~20min,吹干后备用。清洗的目的是为去除衬底表面的杂质,因此在达到清洗目的的前提下,也可采用本领域常规采用的其他清洗方式。所述基片为玻璃片或本领域常规使用的其他衬底。

上述技术方案中,所述步骤S2中,具体步骤是:在磁控溅射腔体中安装ITO靶材或Ag靶材,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min。

上述技术方案中,所述步骤S3中,靶基距为8~10厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,溅射功率为80~100W,溅射时间为20~30min。

上述技术方案中,所述步骤S4中,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min。

上述技术方案中,所述忆阻器件为银/氧化铒/氧化铟锡结构和氧化铟锡/氧化铒/银结构。

本发明的有益效果是:本发明提供的基于氧化铒薄膜的忆阻器件及其制备方法,该忆阻器件是一种电极材料对RRAM存储器正负存储窗口的可控调节的电子器件,该器件结构简单、性能优异、稳定、重复性好,在新型存储器、振荡器等电子器件领域具有很好的应用前景。

附图说明

图1是本发明实施例制得器件的电流-电压(I-V)特征曲线;

图2是本发明实施例制得器件的电阻-圈数(R-C)特征曲线;

图3是本发明实施例制得器件的电阻-时间(R-T)特征曲线。

具体实施方式

下面结合附图和具体实施例对本发明做进一步的说明:

本发明忆阻器件的制备方法,包括以下步骤:

S1、清洗衬底:将基片依次放入去离子水、酒精、丙酮、酒精、去离子水中,分别超声清洗10-20min,基片吹干后放入磁控溅射腔体中;

S2、制备底电极:在磁控溅射腔体中安装底电极的溅射源,即ITO或Ag靶材,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min;

S3、制备功能层:采用射频溅射法,以Er2O3靶材为溅射源,设置靶基距为8~10厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,溅射功率为80~100W,溅射时间为20~30min,在底电极上沉积功能层Er2O3薄膜,其厚度是300~500nm;

S4、沉积顶电极:采用直流溅射法,以Ag或ITO靶材为溅射源,设置靶材到衬底的距离为8~12厘米,将溅射室本底真空度抽至小于5×10-4Pa,通入纯度为99.999%的氩气作为工作气体,溅射气压为1.0~2.0Pa,直流溅射电流为0.2~0.3A,溅射时间为10~20min,在Er2O3薄膜表面沉积上电极,分别制备了结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag的器件。

图1是本发明实施例1制得结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag器件的电流-电压(I-V)特征曲线,即忆阻效应的表征图。测试在室温下进行,从图1中可以看出通过调换电极材料可以实现对RRAM存储器正负存储窗口的可控调节。

图2是本发明实施例1制得结构为Ag/Er2O3/ITO和ITO/Er2O3/Ag器件的电阻-圈数(R-C)变化趋势。从图2中可知该开关具有相对优良的稳定特性。

图3是本发明实施例1制得器件的电阻-时间(R-T)变化趋势,表现出优异的耐久性能。

本领域的普通技术人员将会意识到,这里所述的实施例是为了帮助读者理解本发明的原理,应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。

【EN】

A kind of memory resistor and preparation method thereof based on erbium oxide film

Technical field

The invention belongs to semiconductive thin film devices fields, and in particular to a kind of memory resistor based on erbium oxide film and its

Preparation method.

Background technique

With the development of information science, electronics and information industry has also obtained development at full speed.Electronic device is produced as information

The basis of industry, the continuous technological innovation of electronic component are the very strong driving forces for promoting information science technology to grow rapidly.Meanwhile people

Requirement to electronic device performance it is also higher and higher, undoubtedly this is the challenge that modern people propose scientific circles.Memristor

It is wide by researcher with its unique non-volatile electrology characteristic and superior performance as a kind of new electronic component

It pays close attention to generally.And memristor is considered as one of most promising candidate in next-generation new concept memory.

Memristor, full name memory resistor.Between 1965-1971, scientists are in part binary oxide film

Electric current (I)-voltage (V) hysteresis curve has been observed in the metal-oxide-metal sandwich structure of preparation, however has been ground at that time

The person of studying carefully only stops on the surface its phenomenon understanding, the property and purposes that more unclear such device shows.Then earliest

It is proposed that the people of memristor concept is scientist Cai Shaotang professor of Chinese origin, the time is 1971, and professor Cai was in research voltage at that time

(v), when relationship between four fundamental quantities such as electric current (i), magnetic flux (φ) and quantity of electric charge (q), according to mathematical logic relationship

Integrality propose memristor presence.Until 2008, the researcher Dmitri B.Strukov of Hewlett-Packard etc. was studied

Person experimentally demonstrates the presence of memristor, and its research paper is published on " Nature " periodical in 2008, topic

" memristor, the missing circuit delivered in 1971 are taught for " finding missing memristor " article and Cai Shaotang

Element " it responds to and cooperate with each other across a great distance.Memristor is typical " sandwich " (MIM) structure, and the functional layer between upper/lower electrode generally uses

The resistive layer material of electric resistance changing can occur.Under the action of an applying voltage pulse signal, the resistance of the device can be

It changes between high-impedance state (HRS) and low resistance state (LRS), to realize the storage of " 0 " and " 1 ".

Since 2008, memristor is with its unique advantage, and the structure of such as device is simple, high storage density,

Favor of the advantages that low power consumption, fast read or write speed by researcher.Countries in the world scientist has started the research of memristor

Climax, not only to the working principle of memristor, timeliness to the information storage of memristor and and read-write number, switch ratio

Refreshed by each.It is more excellent that researcher begins look for performance, inexpensively, environmental protection, and beneficial to the memristor material of acquisition, while having a large amount of

The document report preparation method of material and memristor with memristor.The method for preparing memristor has: vacuum sputtering, gas phase

It is prepared by the thin film preparation process of the routine such as deposition, molecular beam epitaxy, thermal evaporation, spin coating, electro-deposition and hydro-thermal method.For inorganic material

Material generally prepares device using the method for vacuum sputtering because vacuum sputtering is relatively cheap, can with large-scale production, and

The advantages that film thickness of preparation is controllable, has good uniformity.The preparation of organic film is generally prepared using the technology of spin coating

Film.Researcher confirms that memristor effect depends not only upon the functional layer material used according to a large amount of experiment, and also relies on

The electrode material of device.Although the report in relation to memristor has very much, there are many more element task not yet solve, such as close

The material and more advanced film preparing technology become apparent at memristor effect, meanwhile, further clarify memristor random access memory

Electric resistance changing mechanism.Since in recent years, memristor memory oneself become materialogy, the new research of information science and physics field

Direction.The discovery of memristor will generate very big influence to the development of electronics science, especially to resistance random access memory

Development has the function of milestone.Although there is the research much about memristor at present, memristor random access memory is realized

Industrialization, there are many more underlying issue need to solve, such as explore that more advanced thin film preparation process is more excellent performance of to be deposited

Store up material, the device architecture that memristor effect becomes apparent.Further elucidate the resistive mechanism of memristor random access memory.

Summary of the invention

Present invention aim to address the above problem, a kind of memory resistor based on erbium oxide film and its preparation side are provided

Method, the memristor are a kind of electrode materials that realizes to the electronic component of the controllable adjustment of the positive and negative memory window of RRAM memory,

The device architecture is simple, has excellent performance, stablizes, is reproducible, has in next-generation new concept memory device field and answers well

Use prospect.

In order to solve the above technical problems, the technical scheme is that a kind of memristor based on erbium oxide film, including

Top electrode, erbium oxide film and hearth electrode, the erbium oxide film is between top electrode and hearth electrode, wherein top electrode

Material with hearth electrode is respectively tin indium oxide or silver, constitutes tin indium oxide or silver/erbium oxide/tin indium oxide or silver-colored sandwich knot

Structure.

In above-mentioned technical proposal, the erbium oxide film with a thickness of 300~500nm.The top electrode tin indium oxide or

Thickness preferably 400~600nm of silver, thickness preferably 400~600nm of the hearth electrode tin indium oxide or silver.

It is worth noting that erbium oxide compares other materials dielectric constant with higher, biggish forbidden bandwidth and good

Good thermal stability, and it has very high transparency in limit of visible spectrum.In the present invention, functional layer erbium oxide is thin

Film with a thickness of 300~500nm, the thickness effect of film Set and Reset voltage further determines the memory window of switch

The size of mouth, when functional layer is with a thickness of 300~500nm, the device has biggish Memory windows.Different electrode materials

The formation direction in functional layer inner conductive channel is affected, the variation in the formation direction and interface potential barrier of conductive channel regulates and controls jointly

The direction of switch and memory window, wherein conductive channel, which forms direction, mainly influences the positive and negative of memory memory window.In electricity

Under the action of, the active ion entered function layer in electrode material forms conductive channel and then realizes that the resistance state of the device turns

Become.Under normal conditions, select active metal Ag and inert ITO or FTO as electrode material.

A kind of preparation method of the above-mentioned memristor based on erbium oxide film, comprising the following steps:

S1, cleaning substrate: cleaning substrate and dry up, spare;

S2, hearth electrode is prepared: using magnetron sputtering method, with tin indium oxide (ITO) or silver-colored target (Ag) for sputtering source, in base

On piece sputtering sedimentation hearth electrode;

S3, preparation functional layer: function is deposited using erbium oxide target as sputtering source on hearth electrode using radio frequency sputtering method

Layer Er2O3Film;

S4, deposition top electrode: using DC sputtering, using tin indium oxide or silver-colored target as sputtering source, in erbium oxide film

Surface deposits top electrode, and the memristor of tin indium oxide or silver/erbium oxide/tin indium oxide or silver-colored sandwich structure is made.

In above-mentioned technical proposal, in the step S1, cleaning is comprised the concrete steps that: by substrate be sequentially placed into deionized water,

Alcohol, alcohol, in deionized water, is cleaned by ultrasonic 10~20min at acetone respectively, spare after drying.The purpose of cleaning is for removal

The impurity of substrate surface, therefore under the premise of reaching cleaning purpose, other cleaning sides that this field routinely uses can also be used

Formula.The substrate is sheet glass or other substrates commonly used in the art.

In above-mentioned technical proposal, in the step S2, comprise the concrete steps that: in magnetron sputtering cavity install ITO target or

Ag target, the distance of setting target to substrate are 8~12 centimetres, and sputtering chamber background vacuum is evacuated to less than 5 × 10-4Pa leads to

Enter the argon gas that purity is 99.999% as working gas, sputtering pressure is 1.0~2.0Pa, d.c. sputtering electric current for 0.2~

0.3A, sputtering time are 10~20min.

In above-mentioned technical proposal, in the step S3, target-substrate distance is 8~10 centimetres, and sputtering chamber background vacuum is evacuated to

Less than 5 × 10-4Pa, being passed through purity is 99.999% argon gas as working gas, and sputtering pressure is 1.0~2.0Pa, sputters function

Rate is 80~100W, and sputtering time is 20~30min.

In above-mentioned technical proposal, in the step S4, the distance of setting target to substrate is 8~12 centimetres, by sputtering chamber

Background vacuum is evacuated to less than 5 × 10-4Pa is passed through the argon gas that purity is 99.999% as working gas, sputtering pressure 1.0

~2.0Pa, d.c. sputtering electric current are 0.2~0.3A, and sputtering time is 10~20min.

In above-mentioned technical proposal, the memory resistor be silver/erbium oxide/tin indium oxide structure and tin indium oxide/erbium oxide/

Silver-colored structure.

The beneficial effects of the present invention are: the memory resistor and preparation method thereof provided by the invention based on erbium oxide film,

The memory resistor is a kind of electronic device of electrode material to the controllable adjustment of the positive and negative memory window of RRAM memory, the device junction

Structure is simple, has excellent performance, stablizes, is reproducible, has application well in field of electronic devices such as novel memory devices, oscillators

Prospect.

Detailed description of the invention

Fig. 1 is current-voltage (I-V) indicatrix that device is made in the embodiment of the present invention;

Fig. 2 is resistance-circle number (R-C) indicatrix that device is made in the embodiment of the present invention;

Fig. 3 is resistivity-time (R-T) indicatrix that device is made in the embodiment of the present invention.

Specific embodiment

The present invention is described further in the following with reference to the drawings and specific embodiments:

The preparation method of memory resistor of the present invention, comprising the following steps:

S1, cleaning substrate: by substrate be sequentially placed into deionized water, alcohol, acetone, alcohol, in deionized water, ultrasound respectively

10-20min is cleaned, is put into magnetron sputtering cavity after substrate drying;

S2, it prepares hearth electrode: the sputtering source of hearth electrode, i.e. ITO or Ag target is installed in magnetron sputtering cavity, target is set

The distance of material to substrate is 8~12 centimetres, and sputtering chamber background vacuum is evacuated to less than 5 × 10-4Pa, being passed through purity is

For 99.999% argon gas as working gas, sputtering pressure is 1.0~2.0Pa, and d.c. sputtering electric current is 0.2~0.3A, sputtering

Time is 10~20min;

S3, preparation functional layer: radio frequency sputtering method is used, with Er2O3Target is sputtering source, and setting target-substrate distance is 8~10 lis

Rice, sputtering chamber background vacuum is evacuated to less than 5 × 10-4Pa is passed through the argon gas that purity is 99.999% as working gas, splashes

Pressure of emanating is 1.0~2.0Pa, and sputtering power is 80~100W, and sputtering time is 20~30min, and function is deposited on hearth electrode

Layer Er2O3Film, thickness are 300~500nm;

S4, deposition top electrode: using DC sputtering, using Ag or ITO target as sputtering source, setting target to substrate away from

From being 8~12 centimetres, sputtering chamber background vacuum is evacuated to less than 5 × 10-4Pa is passed through the argon gas conduct that purity is 99.999%

Working gas, sputtering pressure are 1.0~2.0Pa, and d.c. sputtering electric current is 0.2~0.3A, and sputtering time is 10~20min,

Er2O3Film surface deposits top electrode, and being prepared for structure respectively is Ag/Er2O3/ ITO and ITO/Er2O3The device of/Ag.

Fig. 1 is that structure is made as Ag/Er in the embodiment of the present invention 12O3/ ITO and ITO/Er2O3The current-voltage of/Ag device

(I-V) indicatrix, the i.e. phenogram of memristor effect.Test carries out at room temperature, as can be seen from Figure 1 by exchanging electrode

The controllable adjustment to the positive and negative memory window of RRAM memory may be implemented in material.

Fig. 2 is that structure is made as Ag/Er in the embodiment of the present invention 12O3/ ITO and ITO/Er2O3The resistance of/Ag device-circle number

(R-C) variation tendency.The switch has the stability characteristic (quality) of relative good as can be known from Fig. 2.

Fig. 3 is resistivity-time (R-T) variation tendency that device is made in the embodiment of the present invention 1, shows excellent durability

Energy.

Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair

Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field

Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention

The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.

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