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一种结合高功率脉冲磁控溅射技术的硒鼓制备方法 【EN】A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology

申请(专利)号:CN201910156618.X国省代码:广东 44
申请(专利权)人:【中文】深圳南科超膜材料技术有限公司【EN】Shenzhen Nanke Supermembrane Material Technology Co., Ltd.
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摘要:
【中文】本发明涉及一种结合高功率脉冲磁控溅射技术的硒鼓制备方法,包括基体,和相互连接的真空系统、高功率脉冲磁控溅射系统、真空阴极弧沉积系统及控制系统,基体通过高功率脉冲磁控溅射系统与真空阴极弧沉积系统结合制备成硒鼓;通过将高功率脉冲磁控溅射与真空阴极弧沉积系统相结合,改变等离子体区间的电势分布,提高等离子体密度,在一定程度上解决HIPIMS沉积速率低的问题,同时有效改善了膜基界面结合状况,膜层的致密性良好,制备的薄膜颜色根据薄膜成分可调,沉积速率有所提高,使用性能优良,能够改善界面性能,提高薄膜的摩擦学特性。 【EN】Paragraph:The present invention relates to a kind of toner cartridge preparation methods of combination high-power impulse magnetron sputtering technology, including matrix, with vacuum system interconnected, high-power impulse magnetron sputtering system, vacuum cathode arc depositing system and control system, matrix is prepared into toner cartridge in conjunction with vacuum cathode arc depositing system by high-power impulse magnetron sputtering system;By the way that high-power impulse magnetron sputtering is combined with vacuum cathode arc depositing system, change the Potential Distributing in plasma section, plasma density is improved, solves the problems, such as that HIPIMS deposition rate is low to a certain extent, while effectively improving film base interface bonding state, the compactness of film layer is good, the film color of preparation is adjustable according to thin film composition, and deposition rate increases, and service performance is excellent, interface performance can be improved, improve the tribological property of film.Image:201910156618.GIF

主权项:
【中文】1.一种结合高功率脉冲磁控溅射技术的硒鼓制备方法,其特征在于:包括基体,和相互连接的真空系统、高功率脉冲磁控溅射系统、真空阴极弧沉积系统及控制系统,所述基体通过所述高功率脉冲磁控溅射系统与所述真空阴极弧沉积系统结合制备成硒鼓; 所述结合高功率脉冲磁控溅射技术的硒鼓制备方法,方法步骤如下: S01.利用重金属和气体混合等离子体对所述基体表面进行高低能交替清洗; S02.利用高功率脉冲磁控溅射系统(HIPIMS)对所述基体进行二次清洗; S03.所述真空阴极弧沉积系统(FCVA)以碳靶为阴极,利用双90度磁过滤沉积方法在所述基体上进行高致密DLC涂层的沉积; S04.利用阳极层气体离子源对所述DLC涂层进行纳米结构刻蚀形成1-3nm的无定形增透及耐磨层; S05.所述高功率脉冲磁控溅射系统和/或所述真空阴极弧沉积系统分别或同时进行沉积,两者离子束呈夹角分布,制备成硒鼓。 【EN】1. a kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology, it is characterised in that: including matrix, and mutually Vacuum system, high-power impulse magnetron sputtering system, vacuum cathode arc depositing system and the control system of connection, described matrix are logical It crosses the high-power impulse magnetron sputtering system and is prepared into toner cartridge in conjunction with the vacuum cathode arc depositing system; The toner cartridge preparation method of the combination high-power impulse magnetron sputtering technology, method and step are as follows: S01. high and low energy is carried out to described matrix surface using heavy metal and gas hybrid plasma alternately to clean; S02. secondary cleaning is carried out to described matrix using high-power impulse magnetron sputtering system (HIPIMS); S03. the vacuum cathode arc depositing system (FCVA) is using carbon target as cathode, using double 90 degree of Magnetic filter deposition methods in institute State the deposition that high-densit DLC coating is carried out on matrix; S04. the amorphous increasing to form 1-3nm is etched to DLC coating progress nanostructure using anode layer gas ion source Saturating and wearing layer; S05. the high-power impulse magnetron sputtering system and/or the vacuum cathode arc depositing system are separately or concurrently sunk Product, the two ion beam are distributed in angle, are prepared into toner cartridge.


说明书

【中文】

一种结合高功率脉冲磁控溅射技术的硒鼓制备方法

技术领域

本发明涉及硒鼓制备技术领域,更具体地说是指一种结合高功率脉冲磁控溅射技术的硒鼓制备方法。

背景技术

随着各种办公设备成为人们工作生活中不可或缺的辅助工具,电脑主要外设之一的激光打印机的高频率使用,也使得与之相配套的打印耗材,如砸鼓等的消耗以每年百分之三十多的速度在递増。生产一支新的砸鼓需要消耗大量的石油等资源,废旧砸鼓中的重金属元素及残余碳粉进入空气、水体、土壤会对环境造成极大的危害。所以,提高硒鼓的使用寿命,减少硒鼓的消耗不论是在经济上还是环保角度上都有着重要的意义。根据激光打印机的工作原理,硒鼓的寿命主要取决于硒鼓材料表面的摩擦学特性。因而在硒鼓表面沉积一层保护层,在不影响硒鼓感光特性的同时,増加其摩擦性能,可以有效地提高硒鼓的寿命。

首先,与常规磁控溅射相比,HIPIMS虽同为低温工艺,但由于靶材离子高度离化,可产生高达数百mA/cm2的离子束流轰击,所沉积的薄膜具有如下优点:

(1)在电子反常输运的影响下,离子输运机制转变为横向和纵向正交运动机制,大幅提高了绕镀能力,并可通过施加基片偏压提供电场,控制靶材离子运动方向,实现全方位均匀沉积,有利于在复杂零件表面制备均匀致密薄膜。

(2)高密度离子束流轰击基体表面,在去除基体表面污染的同时注入至薄膜与基体界面,改变基体的取向和表面结构,使薄膜与基体之间形成局部外延生长,获得化学键合界面,大幅增强膜基结合强度。

(3)离子轰击可提高沉积原子表面扩散能力,促进了晶粒的重复形核速率和迁移速率,进而抑制贯穿薄膜厚度的柱状晶结构形成,提高薄膜的致密度和均匀性,改善薄膜硬度、耐磨和耐蚀等性能。

HIPIMS技术作为一种高离化率磁控溅射技术,具有膜层沉积过程可控性好,膜层性能(包括膜基结合力、力学性能、耐摩擦磨损性能及耐化学腐蚀性能等)大大改善的优点。但从工业化技术应用的角度来讲,该技术存在的缺点是沉积速率太低,这可能是制约该技术发展的主要原因。此外,虽然该技术的离化率较常规直流磁控溅射的离化率高,但是对于某些低溅射率的金属靶材,其系统粒子离化率还有待于进一步提高,这也是限制该项技术推广应用的关键。

HIPIMS低沉积速率由溅射金属离子被靶吸回所导致,只有将金属离子有效地收集并输运到基体附近,才可能减少沉积速率的损失。与真空阴极弧沉积系统相结合,在工件上施加负高压,即可改变等离子体区间的电势分布,在工件附近形成低电势区,吸引金属离子向工件运动,进而在一定程度上解决HIPIMS沉积速率低的问题,同时有效改善了膜基界面结合状况,提高薄膜质量。

发明内容

本发明所要解决的技术问题是提供一种结合高功率脉冲磁控溅射技术的硒鼓制备方法,将高功率脉冲磁控溅射与真空阴极弧沉积系统相结合,能够改善界面性能,提高薄膜的摩擦学特性。

为了解决上述技术问题,本发明提供一种结合高功率脉冲磁控溅射技术的硒鼓制备方法,包括基体,和相互连接的真空系统、高功率脉冲磁控溅射系统、真空阴极弧沉积系统及控制系统,所述基体通过所述高功率脉冲磁控溅射系统与所述真空阴极弧沉积系统结合制备成硒鼓;

所述结合高功率脉冲磁控溅射技术的硒鼓制备方法,方法步骤如下:

S01.利用重金属和气体混合等离子体对所述基体表面进行高低能交替清洗;

S02.利用高功率脉冲磁控溅射系统(HIPIMS)对所述基体进行二次清洗;

S03.所述真空阴极弧沉积系统(FCVA)以碳靶为阴极,利用双90度磁过滤沉积方法在所述基体上进行高致密DLC涂层的沉积;

S04.利用阳极层气体离子源对所述DLC涂层进行纳米结构刻蚀形成1-3nm的无定形增透及耐磨层;

S05.所述高功率脉冲磁控溅射系统和/或所述真空阴极弧沉积系统分别或同时进行沉积,两者离子束呈夹角分布,制备成硒鼓。

进一步方案为,所述碳靶产生的碳离子依次穿过第一强脉冲线包和T型磁过滤弯管,为T型磁过滤沉积方法。

进一步方案为,所述第一强脉冲线包的频率0~200Hz,电流为0~50A。

进一步方案为,所述T型磁过滤弯管正偏压采用脉冲式,频率20-100Hz,电压10-30V。

进一步方案为,所述弯管的磁场采用三块线包,与阳极筒相邻的为强脉冲线包,频率为20-80Hz,电流为0-20A,中间线包为直流线包0-5A。

进一步方案为,所述真空室相接的为高脉冲聚焦线包,电流为30-200A,频率为30-300Hz。

进一步方案为,所述高功率脉冲磁控溅射系统和所述真空阴极弧沉积系统的离子束的夹角的角度为30~90度。

进一步方案为,所述真空阴极弧沉积系统(FCVA)和所述高功率脉冲磁控溅射系统(HIPIMS)均配有冷却系统。

进一步方案为,所述基体的样品位于真空室中。

本发明与现有技术相比的有益效果是:本发明在工作温度较低,适用于各种基底,引出的等离子体密度更高,膜层致密性好,结合力良好,通过将高功率脉冲磁控溅射与真空阴极弧沉积系统相结合,改变等离子体区间的电势分布,提高等离子体密度,在一定程度上解决HIPIMS沉积速率低的问题,同时有效改善了膜基界面结合状况,膜层的致密性良好,制备的薄膜颜色根据薄膜成分可调,沉积速率有所提高,使用性能优良,能够改善界面性能,提高薄膜的摩擦学特性。

附图说明

图1为本发明具体实施例的系统设备结构示意图;

图2为本发明具体实施例的工作原理示意图。

具体实施方式

下面结合附图对本发明作进一步详细说明。

如图1和图2所示,本发明的具体实施例,包括基体,和相互连接的真空系统、高功率脉冲磁控溅射系统、真空阴极弧沉积系统及控制系统,基体通过高功率脉冲磁控溅射系统与真空阴极弧沉积系统结合制备成硒鼓;

结合高功率脉冲磁控溅射技术的硒鼓制备方法,方法步骤如下:

S01.利用重金属和气体混合等离子体对基体表面进行高低能交替清洗;

S02.利用高功率脉冲磁控溅射系统(HIPIMS)对基体进行二次清洗;

S03.真空阴极弧沉积系统(FCVA)以碳靶为阴极,利用双90度磁过滤沉积方法在基体上进行高致密DLC涂层的沉积;

S04.利用阳极层气体离子源对所述DLC涂层进行纳米结构刻蚀形成1-3nm的无定形增透及耐磨层;

S05.高功率脉冲磁控溅射系统和/或真空阴极弧沉积系统分别或同时进行沉积,两者离子束呈夹角分布,制备成硒鼓。

进一步地,碳靶产生的碳离子依次穿过第一强脉冲线包和T型磁过滤弯管,为T型磁过滤沉积方法。

进一步地,第一强脉冲线包的频率0~200Hz,电流为0~50A。

进一步地,T型磁过滤弯管正偏压采用脉冲式,频率20-100Hz,电压10-30V。

进一步地,弯管的磁场采用三块线包,与阳极筒相邻的为强脉冲线包,频率为20-80Hz,电流为0-20A,中间线包为直流线包0-5A。

进一步地,真空室相接的为高脉冲聚焦线包,电流为30-200A,频率为30-300Hz。

进一步地,高功率脉冲磁控溅射系统和真空阴极弧沉积系统的离子束的夹角的角度为30~90度。

真空阴极弧沉积系统(FCVA)和所述高功率脉冲磁控溅射系统(HIPIMS)均配有冷却系统。

进一步地,基体的样品位于真空室中。

进一步地,本发明方法处理的硒鼓,色度可调节,薄膜致密性优异,提高亮度以及摩擦性能,延长使用寿命。

本发明包括高功率脉冲磁控溅射系统两套和真空阴极弧沉积系统两套。

其中,T型磁过滤沉积方法为:使碳靶产生的碳离子依次穿过第一强脉冲线包和T型磁过滤弯管。

其中,磁过滤系统技术参数如下:一套脉冲线包,频率0-200Hz,电流0-50A;一套抑制线包,频率0-200Hz,电流0-10A;一套90度磁过滤弯管,弯管正偏压采用脉冲式,频率20-100Hz,电压10-30V;弯管磁场采用三块线包,与阳极筒相邻的为强脉冲线包,频率为20-80Hz,电流为0-20A;中间线包为直流线包0-5A,与真空室相接的为高脉冲聚焦线包,电流为30-200A,频率为30-300Hz。

如图2所示:FCVA为真空阴极弧沉积系统,HIPIMS为高功率脉冲磁控溅射系统,二者均配有冷却系统。样品位于真空室中,可进行自转以及公转运动。通过各部分的合理设计,可使两部分单独工作,也可结合两部分共同工作。两者离子束呈夹角分布,角度30-90度,利用HIPIMS技术低占空比和高峰值功率密度的脉冲与FCVA所产生的等离子体相互作用,可以制备性能更加优良的薄膜。在保证膜层质量的情况下,尽可能的缩小设计尺寸,减小空间,降低成本。通过设备线路走线的优化,进一步优化整体设计。

本发明在工作温度较低,适用于各种基底,引出的等离子体密度更高,膜层致密性好,结合力良好,通过将高功率脉冲磁控溅射与真空阴极弧沉积系统相结合,改变等离子体区间的电势分布,提高等离子体密度,在一定程度上解决HIPIMS沉积速率低的问题,同时有效改善了膜基界面结合状况,膜层的致密性良好,制备的薄膜颜色根据薄膜成分可调,沉积速率有所提高,使用性能优良,能够改善界面性能,提高薄膜的摩擦学特性。

以上所述仅为本专利优选实施方式,并非限制本专利范围,凡是利用说明书及附图内容所作的等效结构或等效流程变换,直接或间接运用在其它相关的技术领域,均属于本专利保护范围。

【EN】

A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology

Technical field

The present invention relates to toner cartridge preparation technical fields, more specifically refer to a kind of combination high-power impulse magnetron sputtering skill

The toner cartridge preparation method of art.

Background technique

As various office equipment become auxiliary tool indispensable in people's Working Life, one of main peripheral hardware of computer

The high-frequency of laser printer use, but also the printing consumables to match therewith, such as pound the consumption of drum with annual percentage

More than 30 speed it is increasing.Production one new drum of pounding needs to consume the resources such as a large amount of petroleum, the waste and old weight pounded in drum

Metallic element and remaining carbon dust enter air, water body, soil and can cause great harm to environment.So improving making for toner cartridge

With the service life, the consumption for reducing toner cartridge whether economically or on environmental angle suffers from important meaning.It is beaten according to laser

The working principle of print machine, the service life of toner cartridge depend primarily on the tribological property of toner cartridge material surface.It is thus heavy on toner cartridge surface

A product protective layer increases its frictional behaviour while not influencing toner cartridge photobehavior, can effectively improve the longevity of toner cartridge

Life.

Firstly, compared with conventional magnetron sputtering, though HIPIMS is all low temperature process, due to target ion height ionization,

It may produce up to hundreds of mA/cm2Ion beam current bombardment, the film deposited has the advantages that

(1) under the influence of electronics anomalous transport, ion transport mechanism transformation is horizontal and vertical orthogonal motion mechanism, greatly

Width is improved around plating ability, and can provide electric field by applying substrate bias, is controlled target ion motion direction, is realized comprehensive

Uniform deposition is conducive to prepare even compact film on complex parts surface.

(2) high density ion beam current bombards matrix surface, is injected into film and base while removing matrix surface pollution

Body interface changes the orientation and surface texture of matrix, makes to form local epitaxial growth between film and matrix, be chemically bonded

Interface substantially enhances film substrate bond strength.

(3) deposition and atomic dispersion surface energy can be improved in ion bombardment, promotes the repetition forming core rate and migration of crystal grain

Rate, and then the columnar crystal structure through film thickness is inhibited to be formed, the consistency and uniformity of film are improved, it is hard to improve film

Degree, wear-resisting and anti-corrosion etc. performances.

HIPIMS technology has film deposition process control good, film layer as a kind of high ionization level magnetron sputtering technique

The advantages of performance (including film-substrate cohesion, mechanical property, wear resistance and resistance to chemical corrosion etc.) substantially improves.

But from the perspective of industrialization technology application, which has the drawback that deposition rate is too low, this may be to restrict the skill

The main reason for art develops.Although in addition, the ionization level of the technology is high compared with the ionization level of customary DC magnetron sputtering, for

The metal targets of certain low sputtering rastes, system particle ionization level need to be further increased, this is also to limit this technology

The key of popularization and application.

Caused by HIPIMS low deposition rate is sucked back by splash-proofing sputtering metal ion by target, only metal ion is effectively collected

And be transported near matrix, it is likely to reduce the loss of deposition rate.It is combined with vacuum cathode arc depositing system, on workpiece

Apply negative high voltage, i.e., the Potential Distributing between changeable plasma slab forms low potential area near workpieces, attracts metal ion

It to workpiece motion s, and then solves the problems, such as that HIPIMS deposition rate is low to a certain extent, while effectively improving film base interface

Bonding state improves film quality.

Summary of the invention

Technical problem to be solved by the invention is to provide a kind of toner cartridge systems of combination high-power impulse magnetron sputtering technology

Preparation Method combines high-power impulse magnetron sputtering with vacuum cathode arc depositing system, can improve interface performance, improves thin

The tribological property of film.

In order to solve the above technical problem, the present invention provides a kind of toner cartridge systems of combination high-power impulse magnetron sputtering technology

Preparation Method, including matrix and vacuum system interconnected, high-power impulse magnetron sputtering system, vacuum cathode arc deposition system

System and control system, described matrix pass through the high-power impulse magnetron sputtering system and the vacuum cathode arc depositing system knot

Conjunction is prepared into toner cartridge;

The toner cartridge preparation method of the combination high-power impulse magnetron sputtering technology, method and step are as follows:

S01. high and low energy is carried out to described matrix surface using heavy metal and gas hybrid plasma alternately to clean;

S02. secondary cleaning is carried out to described matrix using high-power impulse magnetron sputtering system (HIPIMS);

S03. the vacuum cathode arc depositing system (FCVA) utilizes double 90 degree of Magnetic filter deposition methods using carbon target as cathode

The deposition of high-densit DLC coating is carried out on the matrix;

S04. using anode layer gas ion source to the DLC coating carry out nanostructure etch to be formed 1-3nm nothing it is fixed

Shape is anti-reflection and wearing layer;

S05. the high-power impulse magnetron sputtering system and/or the vacuum cathode arc depositing system separately or concurrently into

Row deposition, the two ion beam are distributed in angle, are prepared into toner cartridge.

Further scheme is that the carbon ion that the carbon target generates sequentially passes through the first flash line packet and T-type Magnetic filter is curved

Pipe is T-type Magnetic filter deposition method.

Further scheme is 0~200Hz of frequency of the first flash line packet, and electric current is 0~50A.

Further scheme is that the T-type magnetic filter positive bias uses pulsed, frequency 20-100Hz, voltage 10-

30V。

Further scheme is that the magnetic field of the bend pipe uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency

Rate is 20-80Hz, and electric current 0-20A, medium line packet is AC line packet 0-5A.

Further scheme is that it is high impulse focal line packet, electric current 30-200A, frequency 30- that the vacuum chamber, which connects,

300Hz。

Further scheme is the ion of the high-power impulse magnetron sputtering system and the vacuum cathode arc depositing system

The angle of the angle of beam is 30~90 degree.

Further scheme is the vacuum cathode arc depositing system (FCVA) and the high-power impulse magnetron sputtering system

(HIPIMS) it is provided with cooling system.

Further scheme is that the sample of described matrix is located in vacuum chamber.

Compared with the prior art, the invention has the advantages that: the present invention is lower in operating temperature, is suitable for various substrates,

The plasma density of extraction is higher, and film layer compactness is good, and binding force is good, by by high-power impulse magnetron sputtering and vacuum

Cathodic arc deposition system combines, and changes the Potential Distributing in plasma section, improves plasma density, to a certain extent

It solves the problems, such as that HIPIMS deposition rate is low, while effectively improving film base interface bonding state, the compactness of film layer is good, system

Standby film color is adjustable according to thin film composition, and deposition rate increases, and service performance is excellent, can improve interface performance,

Improve the tribological property of film.

Detailed description of the invention

Fig. 1 is the structure of system equipment schematic diagram of the specific embodiment of the invention;

Fig. 2 is the operation principle schematic diagram of the specific embodiment of the invention.

Specific embodiment

The present invention is described in further detail below in conjunction with the accompanying drawings.

As depicted in figs. 1 and 2, specific embodiments of the present invention, including matrix and vacuum system interconnected, Gao Gong

Rate pulsed magnetron sputtering system, vacuum cathode arc depositing system and control system, matrix pass through high-power impulse magnetron sputtering system

System is prepared into toner cartridge in conjunction with vacuum cathode arc depositing system;

In conjunction with the toner cartridge preparation method of high-power impulse magnetron sputtering technology, method and step is as follows:

S01. high and low energy is carried out to matrix surface using heavy metal and gas hybrid plasma alternately to clean;

S02. secondary cleaning is carried out to matrix using high-power impulse magnetron sputtering system (HIPIMS);

S03. vacuum cathode arc depositing system (FCVA) is using carbon target as cathode, using double 90 degree of Magnetic filter deposition methods in base

The deposition of high-densit DLC coating is carried out on body;

S04. using anode layer gas ion source to the DLC coating carry out nanostructure etch to be formed 1-3nm nothing it is fixed

Shape is anti-reflection and wearing layer;

S05. high-power impulse magnetron sputtering system and/or vacuum cathode arc depositing system are separately or concurrently deposited,

The two ion beam is distributed in angle, is prepared into toner cartridge.

Further, the carbon ion that carbon target generates sequentially passes through the first flash line packet and T-type magnetic filter, is T-type

Magnetic filter deposition method.

Further, 0~200Hz of frequency of the first flash line packet, electric current are 0~50A.

Further, T-type magnetic filter positive bias uses pulsed, frequency 20-100Hz, voltage 10-30V.

Further, the magnetic field of bend pipe uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency 20-

80Hz, electric current 0-20A, medium line packet are AC line packet 0-5A.

Further, it is high impulse focal line packet, electric current 30-200A, frequency 30-300Hz that vacuum chamber, which connects,.

Further, the angle of the angle of the ion beam of high-power impulse magnetron sputtering system and vacuum cathode arc depositing system

Degree is 30~90 degree.

Vacuum cathode arc depositing system (FCVA) and the high-power impulse magnetron sputtering system (HIPIMS) are provided with cold

But system.

Further, the sample of matrix is located in vacuum chamber.

Further, the toner cartridge of the method for the present invention processing, coloration is adjustable, and film compactness is excellent, improve brightness and

Frictional behaviour prolongs the service life.

The present invention includes two sets of two sets of high-power impulse magnetron sputtering system and vacuum cathode arc depositing system.

Wherein, T-type Magnetic filter deposition method are as follows: the carbon ion for generating carbon target sequentially passes through the first flash line packet and T

Type magnetic filter.

Wherein, Magnetic filter systems technology parameter is as follows: a set of impulse line packet, frequency 0-200Hz, electric current 0-50A;A set of suppression

Line packet processed, frequency 0-200Hz, electric current 0-10A;A set of 90 degree of magnetic filters, bend pipe positive bias use pulsed, frequency 20-

100Hz, voltage 10-30V;Bend pipe magnetic field uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency 20-

80Hz, electric current 0-20A;Medium line packet is AC line packet 0-5A, and connecting with vacuum chamber is high impulse focal line packet, and electric current is

30-200A, frequency 30-300Hz.

It is as shown in Figure 2: FCVA be vacuum cathode arc depositing system, HIPIMS be high-power impulse magnetron sputtering system, two

Person is provided with cooling system.Sample is located in vacuum chamber, can carry out rotation and revolution motion.Pass through rationally setting for each section

Meter, can make two parts work independently, also work together in combination with two parts.The two ion beam is distributed in angle, angle 30-90

Degree, utilizes plasma phase interaction caused by the pulse of HIPIMS technology low duty ratio and peak power density and FCVA

With film that can be more excellent with processability.In the case where guaranteeing film quality, design size is reduced as far as possible, is subtracted

Small space, reduces cost.By the optimization of device line cabling, whole design is advanced optimized.

The present invention is lower in operating temperature, is suitable for various substrates, the plasma density of extraction is higher, film layer compactness

Good, binding force is good, by combining high-power impulse magnetron sputtering with vacuum cathode arc depositing system, changes plasma

The Potential Distributing in section improves plasma density, solves the problems, such as that HIPIMS deposition rate is low to a certain extent, have simultaneously

Effect improves film base interface bonding state, and the compactness of film layer is good, and the film color of preparation is adjustable according to thin film composition, deposition

Rate increases, and service performance is excellent, can improve interface performance, improves the tribological property of film.

The foregoing is merely this patent preferred embodiments, not limit this patent range, all using specification and attached

Equivalent structure or equivalent flow shift made by figure content is directly or indirectly used in other relevant technical fields, belongs to

The scope of this patent.

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