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【中文】半导体激光器光谱合束倍频装置
【EN】Semiconductor laser spectrum beam combination frequency doubling device

申请(专利)号:CN201910117306.8国省代码:上海 31
申请(专利权)人:【中文】上海高意激光技术有限公司【EN】Shanghai Gaoyi Laser Technology Co., Ltd.
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摘要:
【中文】本申请提供一种半导体激光器光谱合束倍频装置,涉及激光设备领域。该半导体激光器光谱合束倍频装置包括依次排列的半导体激光器、变换透镜、衍射光栅、倍频晶体和输出耦合镜,半导体激光器位于变换透镜的前焦面,衍射光栅的中心与变换透镜的后焦点重合,半导体激光器发出的多路平行光束经变换透镜聚焦至衍射光栅,并经衍射光栅耦合为合束光输出;输出耦合镜反射基频光、并增透倍频光,由衍射光栅输出的合束光经倍频晶体倍频并经输出耦合镜输出。本申请通过衍射光栅实现光谱合束,提高输出功率和亮度,以及倍频晶体内激光的功率密度和转换效率,并通过输出耦合镜反射基频光并增透倍频光,获得高功率和高效率的激光倍频输出。
【EN】Paragraph:The application provides a kind of semiconductor laser spectrum beam combination frequency doubling device, is related to laser equipment field.The semiconductor laser spectrum beam combination frequency doubling device includes the semiconductor laser being arranged successively, transform lens, diffraction grating, frequency-doubling crystal and output coupling mirror, semiconductor laser is located at the front focal plane of transform lens, the center of diffraction grating is overlapped with the rear focus of transform lens, the transformed lens focus of Multichannel Parallel light beam that semiconductor laser issues is coupled as combined beam light output to diffraction grating, and through diffraction grating;Output coupling mirror reflects fundamental frequency light and anti-reflection frequency doubled light, is exported through frequency-doubling crystal frequency multiplication and by the combined beam light that diffraction grating exports through output coupling mirror.The application realizes spectrum beam combination by diffraction grating, improve output power and brightness, and in frequency-doubling crystal laser power density and transfer efficiency, and fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror, obtain high power and the output of efficient laser freuqency doubling.

主权项:
【中文】1.一种半导体激光器光谱合束倍频装置,其特征在于,包括沿光束传播方向依次排列的用于发出多路平行光束的半导体激光器、用于聚焦各路光束的变换透镜、用于耦合各路光束的衍射光栅, 所述半导体激光器位于所述变换透镜的前焦面,所述衍射光栅的中心与所述变换透镜的后焦点重合,所述半导体激光器发出的多路平行光束经所述变换透镜聚焦至所述衍射光栅,并经所述衍射光栅耦合为合束光输出;以及 倍频晶体和输出耦合镜,所述倍频晶体位于所述衍射光栅的输出光路上,所述输出耦合镜位于所述倍频晶体的输出光路上,所述输出耦合镜反射基频光、并增透倍频光,所述合束光经所述倍频晶体倍频并经所述输出耦合镜输出。【EN】1. a kind of semiconductor laser spectrum beam combination frequency doubling device, which is characterized in that including being arranged successively along direction of beam propagation For issuing the semiconductor laser of Multichannel Parallel light beam, the transform lens for focusing each road light beam, for coupling each road The diffraction grating of light beam,


相似专利
说明书

【中文】

半导体激光器光谱合束倍频装置

技术领域

本申请涉及激光设备领域,具体地说,涉及一种半导体激光器光谱合束倍频装置。

背景技术

半导体激光器有着成本低,寿命长,体积小,可靠性高等优点,在工业加工,泵浦,医疗,通信等方面都有广泛的应用前景。能否进一步提高半导体激光器的亮度是制约半导体激光器未来发展的一个重要因素。激光光束的亮度由输出功率的大小和光束质量决定,功率越大,光束质量越好,亮度就越高,半导体激光器的应用领域也更加广泛。另外,对于一些特定波长的半导体激光器,其输出功率有限且价格十分高昂;且由于目前半导体技术的局限性,例如波长532nm或一些紫外短波长的半导体激光器还未能实现。因此,利用激光二极管合束提高功率及功率密度,再对合束激光进行倍频而获得倍频激光是一种理想选择。

合束技术是当前实现高亮度半导体激光器的常用手段,常规合束技术包括偏振合束、波长合束和光纤合束等。偏振合束通过偏振相关器件将两个偏振方向的光合为一束,亮度只能提高到两倍,一般配合其他合束技术使用;波长合束受到镀膜技术的限制,合束单元数一般不超过5个,对功率和亮度的提高也有限;光纤合束对激光的NA存在限制,多束激光合束会降低效率且光纤耦合过程中存在一定损耗。

对于激光倍频,倍频光的输出功率与基频光的功率、光束质量相关。对于半导体激光器的倍频,如何提高半导体激光功率与其光束质量成为获得更高倍频效率的关键因素。

需要说明的是,在上述背景技术部分公开的信息仅用于加强对本申请的背景的理解,因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。

发明内容

有鉴于此,本申请提供一种半导体激光器光谱合束倍频装置,将光谱合束技术与倍频技术结合,获得高功率和高效率的激光倍频输出。

根据本申请的一个方面,提供一种半导体激光器光谱合束倍频装置,包括沿光束传播方向依次排列的用于发出多路平行光束的半导体激光器、用于聚焦各路光束的变换透镜、用于耦合各路光束的衍射光栅,所述半导体激光器位于所述变换透镜的前焦面,所述衍射光栅的中心与所述变换透镜的后焦点重合,所述半导体激光器发出的多路平行光束经所述变换透镜聚焦至所述衍射光栅,并经所述衍射光栅耦合为合束光输出;以及倍频晶体和输出耦合镜,所述倍频晶体位于所述衍射光栅的输出光路上,所述输出耦合镜位于所述倍频晶体的输出光路上,所述输出耦合镜反射基频光、并增透倍频光,所述合束光经所述倍频晶体倍频并经所述输出耦合镜输出。

优选地,上述的半导体激光器光谱合束倍频装置中,沿光束传播方向,所述输出耦合镜的前表面镀有基频光反射膜和倍频光增透膜,后表面镀有倍频光增透膜;所述基频光反射膜的反射率为5%~30%,所述倍频光增透膜的透射率大于99%。

优选地,上述的半导体激光器光谱合束倍频装置还包括:第一透镜,位于所述衍射光栅与所述倍频晶体之间,所述第一透镜用于将所述合束光聚焦至所述倍频晶体;和/或第二透镜,位于所述倍频晶体与所述输出耦合镜之间,所述第二透镜用于准直所述倍频晶体输出的倍频光束和基频光束,及将所述输出耦合镜反射的基频光束聚焦至所述倍频晶体。

优选地,上述的半导体激光器光谱合束倍频装置中,所述第一透镜为非球面透镜、球面透镜或渐变折射率透镜;所述第二透镜为非球面透镜、球面透镜或渐变折射率透镜。

优选地,上述的半导体激光器光谱合束倍频装置中,沿光束传播方向,所述倍频晶体的前表面镀有基频光增透膜和倍频光高反膜,后表面镀有基频光增透膜和倍频光增透膜;所述基频光增透膜的透射率大于99%,所述倍频光高反膜的反射率大于99%,所述倍频光增透膜的透射率大于99%。

优选地,上述的半导体激光器光谱合束倍频装置中,所述倍频晶体是KTP非线性晶体、LBO非线性晶体或BBO非线性晶体;或者所述倍频晶体是PPLN周期性晶体、或PPKTP周期性晶体。

优选地,上述的半导体激光器光谱合束倍频装置中,所述衍射光栅为透射式光栅或反射式光栅,且所述衍射光栅在1级或-1级次的衍射效率大于90%。

优选地,上述的半导体激光器光谱合束倍频装置中,所述变换透镜的作用方向为慢轴,所述变换透镜选自:单个球面柱透镜、多个球面柱透镜组成的透镜组、单个非球面柱透镜、或多个非球面柱透镜组成的透镜组。

优选地,上述的半导体激光器光谱合束倍频装置还包括:光束整形元件,位于所述半导体激光器与所述变换透镜之间,所述光束整形元件用于准直所述半导体激光器发出的多路平行光束;所述光束整形元件选自:快轴准直镜、快轴准直镜和慢轴准直镜的组合、或快轴准直镜和45°斜柱透镜阵列的组合。

优选地,上述的半导体激光器光谱合束倍频装置中,所述半导体激光器的前端面反射率小于1%,后腔面反射率大于95%;所述半导体激光器选自:沿水平方向排列的多个半导体激光器单管、沿水平方向排列的多个发光单元形成的半导体激光器阵列、沿水平方向排列的多个半导体激光器阵列、沿竖直方向排列的多个半导体激光器单管、沿竖直方向排列的多个发光单元形成的半导体激光器阵列、或沿竖直方向排列的多个半导体激光器阵列。

本申请与现有技术相比的有益效果在于:

通过衍射光栅实现对半导体激光器输出的多路光束的光谱合束,提高半导体激光器的输出功率和亮度,及进入倍频晶体内激光的功率密度;

通过输出耦合镜反射基频光并增透倍频光,使大部分基频光获得倍频,提高倍频晶体的转换效率,从而获得高功率和高效率的激光倍频输出。

应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本申请。

附图说明

此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本申请的实施例,并与说明书一起用于解释本申请的原理。显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。

图1示出本申请实施例中第一种半导体激光器光谱合束倍频装置的示意图;

图2示出本申请实施例中第二种半导体激光器光谱合束倍频装置的示意图;

图3示出本申请实施例中第三种半导体激光器光谱合束倍频装置的示意图。

具体实施方式

现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式。相反,提供这些实施方式使得本申请将全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。在图中相同的附图标记表示相同或类似的结构,因而将省略对它们的重复描述。

图1至图3示出实施例中三种半导体激光器光谱合束倍频装置的示意图。结合图1至图3所示,在本申请的一些实施例中,半导体激光器光谱合束倍频装置包括:

沿光束传播方向依次排列的用于发出多路平行光束的半导体激光器1、用于聚焦各路光束的变换透镜3、用于耦合各路光束的衍射光栅4,半导体激光器1位于变换透镜3的前焦面,衍射光栅4的中心与变换透镜3的后焦点重合,半导体激光器1发出的多路平行光束经变换透镜3聚焦至衍射光栅4,并经衍射光栅4耦合为合束光输出;以及

倍频晶体6和输出耦合镜8,倍频晶体6位于衍射光栅4的输出光路上,输出耦合镜8位于倍频晶体6的输出光路上,输出耦合镜8反射基频光、并增透倍频光,合束光经倍频晶体6倍频并经输出耦合镜8输出。

上述的半导体激光器光谱合束倍频装置通过衍射光栅4压缩光谱,使谱宽控制在半导体增益介质的增益范围和衍射光栅4的高效率衍射范围内,实现对半导体激光器1输出的多路光束的光谱合束,提高激光输出功率和亮度;得益于衍射光栅4的衍射合束作用,能够在一定的增益带宽内加入更多的合束单元,提高光谱合束功率和亮度,且合束后为单模激光,使倍频晶体6获得高功率的合束光,从而产生高功率的倍频激光。通过输出耦合镜8反射基频光、并增透倍频光,使大部分基频光返回倍频晶体6获得倍频,提高倍频晶体6的转换效率,从而获得高功率和高效率的激光倍频输出。

其中,光谱合束是一种新颖的半导体激光合束技术,通过外腔反馈作用和衍射光栅4的色散作用将半导体激光器1的各个发光单元锁定在不同的波长,从而获得相同的衍射角实现合束。光谱合束的优点在于:其一,将半导体激光器1的各路输出光合束,实现功率的叠加,同时光束质量能保持为单个发光单元的高光束质量,极大地提高了半导体激光器1的亮度;其二,多个发光单元可以共用合束元件,不限制合束单元数量,能够大幅降低成本,在大功率半导体激光器领域应用时有更大的优势。

进一步的,在优选的实施例中,沿光束传播方向,输出耦合镜8的前表面8a镀有基频光反射膜和倍频光增透膜,后表面8b镀有倍频光增透膜。基频光反射膜的反射率约为5%~30%,倍频光增透膜的透射率大于99%。得益于前表面8a镀的基频光反射膜和倍频光增透膜,以及后表面8b镀的倍频光增透膜,经倍频晶体6倍频后的倍频光通过输出耦合镜8输出,基频光反射至倍频晶体6再次倍频,以提高基频光的转换效率,使大部分基频光获得倍频,得到高效率的激光倍频输出。

进一步优选的,在一些实施例中,半导体激光器光谱合束倍频装置还包括:第一透镜5,位于衍射光栅4与倍频晶体6之间,第一透镜5用于将衍射光栅4输出的合束光聚焦至倍频晶体6。合束光经过第一透镜5的聚焦,进入倍频晶体6中具有更高的功率密度,同时也能提高倍频晶体6的转换效率。第二透镜7,位于倍频晶体6与输出耦合镜8之间,第二透镜7用于准直倍频晶体6输出的倍频光束和基频光束,以及将输出耦合镜8反射的基频光束聚焦至倍频晶体6。通过第二透镜7的聚焦,倍频晶体6输出的倍频光束垂直入射至输出耦合镜8并输出,由输出耦合镜8反射的基频光束再次聚焦进入倍频晶体6,提高倍频晶体6内激光的功率密度和转换效率。第一透镜5和第二透镜7均可选自非球面透镜、球面透镜或渐变折射率透镜。

进一步的,在一些实施例中,沿光束传播方向,倍频晶体6的前表面6a镀有基频光增透膜和倍频光高反膜,后表面6b镀有基频光增透膜和倍频光增透膜。基频光增透膜的透射率大于99%,倍频光高反膜的反射率大于99%,倍频光增透膜的透射率大于99%。得益于前表面6a镀的基频光增透膜和倍频光高反膜,以及后表面6b镀的基频光增透膜和倍频光增透膜,倍频晶体6能够高效率接收衍射光栅4输出的基频光束和输出耦合镜8反射的基频光束,使基频光束在倍频晶体6内获得倍频,并高效率输出,从而提高倍频晶体6的倍频效率。

倍频晶体6可以是非线性晶体,如KTP(磷酸氧钛钾)、LBO(偏硼酸锂)、BBO(偏硼酸钡)等非线性晶体。也可以是周期性晶体,如PPLN(周期性极化铌酸锂)、PPKTP(周期性极化磷酸氧钛钾)等周期性晶体,周期结构晶体具有更高的非线性系数,可以获得更高的倍频效率。

衍射光栅4可以是透射式光栅或反射式光栅,且衍射光栅4在1级或-1级次的衍射效率大于90%。图1和图3所示的衍射光栅4为透射式光栅,图2所示的衍射光栅4为反射式光栅。不管是透射式光栅还是反射式光栅,其在1级或-1级次的衍射效率均大于90%,使半导体激光器1发出的各路光束经变换透镜3汇聚后在衍射光栅4上具有相同的位置和衍射角,实现合束。如上所述,得益于衍射光栅4的衍射作用,半导体激光器1的输出光束可以在合理范围内根据实际需求增加,以提高激光强度。在一些实施例中,半导体激光器1可以选自:沿水平方向排列的多个半导体激光器单管、沿水平方向排列的多个发光单元形成的半导体激光器阵列、沿水平方向排列的多个半导体激光器阵列、沿竖直方向排列的多个半导体激光器单管、沿竖直方向排列的多个发光单元形成的半导体激光器阵列、或沿竖直方向排列的多个半导体激光器阵列。半导体激光器1及其发光单元的个数可根据实际需求增加,增加合束单元的数量可以提高激光强度。

其中,水平方向和竖直方向相垂直,且共同形成垂直于半导体激光器1的光束输出方向的平面,半导体激光器1输出的各路光束的光轴相互平行。在优选的实施例中,半导体激光器1的前端面1a反射率小于1%,后腔面1b反射率大于95%。

进一步的,在优选的实施例中,半导体激光器光谱合束倍频装置还包括:光束整形元件2,位于半导体激光器1与变换透镜3之间,光束整形元件2用于准直半导体激光器1发出的多路平行光束,使变换透镜3获得更好的聚焦效果。光束整形元件2可以选自:快轴准直镜、快轴准直镜和慢轴准直镜的组合、或快轴准直镜和45°斜柱透镜阵列的组合。变换透镜3的作用方向为慢轴,变换透镜3可以选自:单个球面柱透镜、多个球面柱透镜组成的透镜组、单个非球面柱透镜、或多个非球面柱透镜组成的透镜组。其中,一光束整形元件2对应一半导体激光器1,整个半导体激光器光谱合束倍频装置共用一变换透镜3和一衍射光栅4,以减小半导体激光器光谱合束倍频装置的体积。

上述各实施例描述的半导体激光器光谱合束倍频装置实现激光光谱合束和倍频的过程包括:由半导体激光器1发出的在半导体激光器1内腔经振荡的多路平行光束经光束整形元件2准直后入射至变换透镜3。变换透镜3将各路光束分别聚焦至衍射光栅4,衍射光栅4设于变换透镜3的后焦点处,使各路光束在衍射光栅4上具有相同的位置和衍射角,实现合束。通过衍射光栅4压缩光谱实现谱宽控制在半导体增益介质的增益范围和衍射光栅4的高效率衍射范围内,实现对半导体激光器1输出的多路光束的光谱合束,提高激光输出功率和亮度。合束后的激光通过第一透镜5聚焦进入倍频晶体6,提高倍频晶体6内的功率密度和倍频效率。倍频晶体6对激光进行倍频,获得所需波长的倍频光。经倍频晶体6的倍频激光和基频光通过第二透镜7准直垂直入射至输出耦合镜8。输出耦合镜8通过增透倍频光和反射基频光,使获得倍频的激光输出、未获得倍频的激光返回倍频晶体6再次倍频,提高倍频晶体6的转换效率。其中,详细的获得高功率和高效率激光倍频输出的过程可参照上述各个实施例的描述,此处不再赘述。

综上,本申请通过衍射光栅4实现光谱合束,提高半导体激光器1的输出功率和亮度,及进入倍频晶体6内激光的功率密度;通过第一透镜5和第二透镜7提高倍频晶体6的倍频效率;通过输出耦合镜8反射基频光并增透倍频光,使大部分基频光获得倍频,提高倍频晶体6的转换效率,从而获得高功率和高效率的激光倍频输出。

以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明,不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本申请的保护范围。

【EN】

Semiconductor laser spectrum beam combination frequency doubling device

Technical field

This application involves laser equipment fields, specifically, being related to a kind of semiconductor laser spectrum beam combination frequency doubling device.

Background technique

Semiconductor laser has at low cost, and the service life is long, small in size, high reliability, in industrial processes, pumping,

Medical treatment, communication etc. all have wide practical use.Can the brightness that semiconductor laser be further increased be to restrict partly to lead

One key factor of body laser future development.The brightness of laser beam determines by the size and beam quality of output power,

Power is bigger, and beam quality is better, and brightness is higher, and the application field of semiconductor laser is also more extensive.In addition, for one

The semiconductor laser of a little specific wavelengths, output power is limited and price is very high;And due to current semiconductor technology

Limitation, such as the semiconductor laser of the ultraviolet short wavelength of wavelength 532nm or some have not been achievable.Therefore, laser two is utilized

Pole pipe closes Shu Tigao power and power density, then pairing Shu Jiguang carries out frequency multiplication and obtain double-frequency laser to be a kind of ideal chose.

Closing beam technology is the current conventional means for realizing high brightness semiconductor laser, and conventional beam technology of closing includes that polarization closes

Beam, wavelength coupling and optical-fiber bundling etc..Polarization coupling by polarization related device by two polarization directions it is photosynthetic be it is a branch of, it is bright

Degree can only be increased to twice, generally cooperated other to close beam technology and used;Wavelength coupling is limited by coating technique, combined beam unit

Number is usually no more than 5, also limited to the raising of power and brightness;There is limitation, multiple laser to the NA of laser in optical-fiber bundling

There is certain loss during efficiency and fiber coupling can be reduced in conjunction beam.

For laser freuqency doubling, the output power of frequency doubled light is related to the power of fundamental frequency light, beam quality.Semiconductor is swashed

The frequency multiplication of light device, how to improve semiconductor laser power and its beam quality becomes the key factor for obtaining more high frequency doubling efficiency.

It should be noted that information is only used for reinforcing the reason to the background of the application disclosed in above-mentioned background technology part

Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.

Summary of the invention

In view of this, the application provides a kind of semiconductor laser spectrum beam combination frequency doubling device, by spectrum beam combination technology with

Frequency doubling technology combines, and obtains high power and the output of efficient laser freuqency doubling.

According to the one aspect of the application, a kind of semiconductor laser spectrum beam combination frequency doubling device is provided, including along light beam

The direction of propagation is arranged successively saturating for issuing the semiconductor laser of Multichannel Parallel light beam, the transformation for focusing each road light beam

Mirror, the diffraction grating for coupling each road light beam, the semiconductor laser is located at the front focal plane of the transform lens, described to spread out

The center for penetrating grating is overlapped with the rear focus of the transform lens, and the Multichannel Parallel light beam that the semiconductor laser issues is through institute

It states transform lens and focuses to the diffraction grating, and be coupled as combined beam light output through the diffraction grating;And frequency-doubling crystal and

Output coupling mirror, the frequency-doubling crystal are located on the output light path of the diffraction grating, and the output coupling mirror is located at described times

On the output light path of frequency crystal, the output coupling mirror reflects fundamental frequency light and anti-reflection frequency doubled light, and the combined beam light is through the frequency multiplication

Crystal double frequency is simultaneously exported through the output coupling mirror.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, along direction of beam propagation, the output coupling

The front surface for closing mirror is coated with fundamental frequency optical reflection film and frequency doubled light anti-reflection film, and rear surface is coated with frequency doubled light anti-reflection film;The fundamental frequency light

The reflectivity of reflectance coating is 5%~30%, and the transmissivity of the frequency doubled light anti-reflection film is greater than 99%.

Preferably, above-mentioned semiconductor laser spectrum beam combination frequency doubling device further include: the first lens are located at the diffraction

Between grating and the frequency-doubling crystal, first lens are used to the combined beam light focusing to the frequency-doubling crystal;And/or the

Two lens, between the frequency-doubling crystal and the output coupling mirror, second lens are for collimating the frequency-doubling crystal

The frequency multiplication light beam and basic frequency beam of output, and the basic frequency beam that the output coupling mirror reflects is focused into the frequency-doubling crystal.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, first lens be non-spherical lens,

Spherical lens or gradual index lens;Second lens are non-spherical lens, spherical lens or gradual index lens.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, along direction of beam propagation, the frequency multiplication is brilliant

The front surface of body is coated with fundamental frequency light anti-reflection film and frequency doubled light high-reflecting film, and rear surface is coated with fundamental frequency light anti-reflection film and frequency doubled light is anti-reflection

Film;The transmissivity of the fundamental frequency light anti-reflection film is greater than 99%, and the reflectivity of the frequency doubled light high-reflecting film is greater than 99%, the frequency multiplication

The transmissivity of light anti-reflection film is greater than 99%.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the frequency-doubling crystal is the non-linear crystalline substance of KTP

Body, LBO nonlinear crystal or BBO nonlinear crystal;Or the frequency-doubling crystal is PPLN periodic crystal or PPKTP period

Property crystal.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the diffraction grating is transmission-type grating

Or reflective gratings, and the diffraction grating is greater than 90% in the diffraction efficiency of 1 grade or -1 level.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the action direction of the transform lens is

Slow axis, the transform lens are selected from: single spherical surface cylindrical lens, the lens group of multiple spherical surface cylindrical lens composition, single aspherical column

The lens group of lens or multiple aspheric designs composition.

Preferably, above-mentioned semiconductor laser spectrum beam combination frequency doubling device further include: beam shaping element is located at described

Between semiconductor laser and the transform lens, the beam shaping element is used to collimate what the semiconductor laser issued

Multichannel Parallel light beam;The beam shaping element is selected from: fast axis collimation mirror, fast axis collimation mirror and slow axis collimating mirror combination or

The combination of fast axis collimation mirror and 45 ° of batter post lens arrays.

Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the front end face of the semiconductor laser

For reflectivity less than 1%, rear facet reflectivity is greater than 95%;The semiconductor laser is selected from: what is arranged in the horizontal direction is multiple

Semiconductor laser single tube, the multiple luminescence units arranged in the horizontal direction formed semiconductor laser array, along level side

To multiple semiconductor laser arrays of arrangement, along the vertical direction multiple semiconductor laser single tubes, along the vertical direction for arranging

The semiconductor laser array or the multiple semiconductor laser battle arrays arranged along the vertical direction that multiple luminescence units of arrangement are formed

Column.

The beneficial effect of the application compared with prior art is:

The spectrum beam combination that the multichannel light beam of noise spectra of semiconductor lasers output is realized by diffraction grating, improves semiconductor laser

The output power of device and brightness, and enter the power density of laser in frequency-doubling crystal;

Fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror, most of fundamental frequency light is made to obtain frequency multiplication, improves frequency multiplication

The transfer efficiency of crystal, to obtain high power and the output of efficient laser freuqency doubling.

It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not

The application can be limited.

Detailed description of the invention

The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application

Example, and together with specification it is used to explain the principle of the application.It should be evident that the accompanying drawings in the following description is only the application

Some embodiments for those of ordinary skill in the art without creative efforts, can also basis

These attached drawings obtain other attached drawings.

Fig. 1 shows the schematic diagram of the first semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application;

Fig. 2 shows the schematic diagrames of second of semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application;

Fig. 3 shows the schematic diagram of the third semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application.

Specific embodiment

Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes

Formula is implemented, and is not understood as limited to embodiment set forth herein.On the contrary, thesing embodiments are provided so that the application will

Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.It is identical attached in figure

Icon note indicates same or similar structure, thus will omit repetition thereof.

Fig. 1 to Fig. 3 shows the schematic diagram of three kinds of semiconductor laser spectrum beam combination frequency doubling devices in embodiment.In conjunction with Fig. 1

To shown in Fig. 3, in some embodiments of the present application, semiconductor laser spectrum beam combination frequency doubling device includes:

It is used to issue the semiconductor laser 1 of Multichannel Parallel light beam, for focusing along what direction of beam propagation was arranged successively

The transform lens 3 of each road light beam, the diffraction grating 4 for coupling each road light beam, semiconductor laser 1 are located at transform lens 3

Front focal plane, the center of diffraction grating 4 are overlapped with the rear focus of transform lens 3, the Multichannel Parallel light beam that semiconductor laser 1 issues

Transformed lens 3 focus to diffraction grating 4, and are coupled as combined beam light output through diffraction grating 4;And

Frequency-doubling crystal 6 and output coupling mirror 8, frequency-doubling crystal 6 are located on the output light path of diffraction grating 4, output coupling mirror 8

On the output light path of frequency-doubling crystal 6, output coupling mirror 8 reflects fundamental frequency light and anti-reflection frequency doubled light, and combined beam light is through frequency-doubling crystal

6 frequencys multiplication are simultaneously exported through output coupling mirror 8.

Above-mentioned semiconductor laser spectrum beam combination frequency doubling device makes spectrum width control exist by 4 compressed spectrum of diffraction grating

In the gain ranging of semiconductor gain media and the high efficiency range of diffraction of diffraction grating 4, realize that noise spectra of semiconductor lasers 1 exports

Multichannel light beam spectrum beam combination, improve laser output power and brightness;The diffraction for having benefited from diffraction grating 4 closes Shu Zuoyong, energy

It is enough that more combined beam units are added in certain gain bandwidth, spectrum beam combination power and brightness are improved, and close Shu Houwei single mode

Laser makes frequency-doubling crystal 6 obtain high-power combined beam light, to generate high-power double-frequency laser.It is anti-by output coupling mirror 8

Fundamental frequency light and anti-reflection frequency doubled light are penetrated, so that most of fundamental frequency light is returned to frequency-doubling crystal 6 and obtains frequency multiplication, improve the conversion of frequency-doubling crystal 6

Efficiency, to obtain high power and the output of efficient laser freuqency doubling.

Wherein, spectrum beam combination is a kind of novel semiconductor laser conjunction beam technology, passes through external cavity feedback effect and diffraction light

Each luminescence unit of semiconductor laser 1 is locked in different wavelength by the dispersion interaction of grid 4, to obtain identical diffraction

Angle, which is realized, closes beam.The advantages of spectrum beam combination, is: first, each road of semiconductor laser 1 is exported combiner, realizing power

Superposition, while beam quality is able to maintain as the high light beam quality of single luminescence unit, greatly improves semiconductor laser 1

Brightness;Second, multiple luminescence units, which can share, closes beam element, combined beam unit quantity is not limited, cost can be greatly reduced,

There is bigger advantage in high power semiconductor lasers field when applying.

Further, in a preferred embodiment, along direction of beam propagation, the front surface 8a of output coupling mirror 8 is coated with base

Frequency optical reflection film and frequency doubled light anti-reflection film, rear surface 8b are coated with frequency doubled light anti-reflection film.The reflectivity of fundamental frequency optical reflection film is about 5%

~30%, the transmissivity of frequency doubled light anti-reflection film is greater than 99%.The fundamental frequency optical reflection film and frequency doubled light for having benefited from front surface 8a plating increase

Permeable membrane and the frequency doubled light anti-reflection film of rear surface 8b plating, the frequency doubled light after 6 frequency multiplication of frequency-doubling crystal are defeated by output coupling mirror 8

Out, fundamental frequency light reflexes to the frequency multiplication again of frequency-doubling crystal 6, to improve the transfer efficiency of fundamental frequency light, obtains most of fundamental frequency light again

Frequently, efficient laser freuqency doubling output is obtained.

It is further preferred that in some embodiments, semiconductor laser spectrum beam combination frequency doubling device further include: first thoroughly

Mirror 5, between diffraction grating 4 and frequency-doubling crystal 6, the first lens 5 are used to focus to the combined beam light that diffraction grating 4 exports again

Frequency crystal 6.Combined beam light passes through the focusing of the first lens 5, into having higher power density in frequency-doubling crystal 6, while also can

Improve the transfer efficiency of frequency-doubling crystal 6.Second lens 7, between frequency-doubling crystal 6 and output coupling mirror 8, the second lens 7 are used

It is focused in frequency multiplication light beam and basic frequency beam that collimation frequency-doubling crystal 6 exports, and by the basic frequency beam that output coupling mirror 8 reflects

Frequency-doubling crystal 6.By the focusing of the second lens 7, the frequency multiplication light beam vertical incidence that frequency-doubling crystal 6 exports to output coupling mirror 8 simultaneously

Output, the basic frequency beam reflected by output coupling mirror 8 focuses again enters frequency-doubling crystal 6, improves the function of laser in frequency-doubling crystal 6

Rate density and transfer efficiency.First lens 5 and the second lens 7 can be selected from non-spherical lens, spherical lens or graded index

Lens.

Further, in some embodiments, along direction of beam propagation, the front surface 6a of frequency-doubling crystal 6 is coated with fundamental frequency light

Anti-reflection film and frequency doubled light high-reflecting film, rear surface 6b are coated with fundamental frequency light anti-reflection film and frequency doubled light anti-reflection film.Fundamental frequency light anti-reflection film it is saturating

Rate is penetrated greater than 99%, the reflectivity of frequency doubled light high-reflecting film is greater than 99%, and the transmissivity of frequency doubled light anti-reflection film is greater than 99%.Have benefited from

The fundamental frequency light anti-reflection film and frequency doubled light high-reflecting film of front surface 6a plating and the fundamental frequency light anti-reflection film and frequency doubled light of rear surface 6b plating increase

Permeable membrane, frequency-doubling crystal 6 are capable of the fundamental frequency light of high efficiency reception diffraction grating 4 basic frequency beam exported and the reflection of output coupling mirror 8

Beam makes basic frequency beam obtain frequency multiplication in frequency-doubling crystal 6, and high efficiency exports, to improve the shg efficiency of frequency-doubling crystal 6.

Frequency-doubling crystal 6 can be nonlinear crystal, such as KTP (potassium titanyl phosphate), LBO (lithium metaborate), BBO (metaboric acid

Barium) etc. nonlinear crystals.It is also possible to periodic crystal, as PPLN (periodic polarized lithium niobate), PPKTP are (periodic polarized

Potassium titanyl phosphate) quasi-periodic crystal, periodic structure crystal has higher nonlinear factor, can obtain higher frequency multiplication effect

Rate.

Diffraction grating 4 can be transmission-type grating or reflective gratings, and diffraction grating 4 is in 1 grade or the diffraction of -1 level

Efficiency is greater than 90%.Fig. 1 and diffraction grating shown in Fig. 34 are transmission-type grating, and diffraction grating 4 shown in Fig. 2 is reflecting light

Grid.Either transmission-type grating or reflective gratings are all larger than 90% in the diffraction efficiency of 1 grade or -1 level, make partly to lead

The transformed lens 3 of each road light beam that body laser 1 issues converge after on diffraction grating 4 position having the same and the angle of diffraction,

It realizes and closes beam.As described above, having benefited from the diffraction of diffraction grating 4, the output beam of semiconductor laser 1 can be reasonable

Increase according to actual needs in range, to improve laser intensity.In some embodiments, semiconductor laser 1 can be selected from: edge

The semiconductor that multiple semiconductor laser single tubes of horizontal direction arrangement, the multiple luminescence units arranged in the horizontal direction are formed swashs

Light device array, the multiple semiconductor laser arrays arranged in the horizontal direction, the multiple semiconductor lasers arranged along the vertical direction

The semiconductor laser array or arrange along the vertical direction that device single tube, multiple luminescence units for arranging along the vertical direction are formed

Multiple semiconductor laser arrays.The number of semiconductor laser 1 and its luminescence unit can increase according to actual needs, increase and close

Laser intensity can be improved in the quantity of Shu Danyuan.

Wherein, horizontal direction and vertical direction are perpendicular, and the light beam output perpendicular to semiconductor laser 1 is collectively formed

The optical axis of the plane in direction, each road light beam that semiconductor laser 1 exports is parallel to each other.In a preferred embodiment, semiconductor

For the front end face 1a reflectivity of laser 1 less than 1%, rear facet 1b reflectivity is greater than 95%.

Further, in a preferred embodiment, semiconductor laser spectrum beam combination frequency doubling device further include: beam shaping

Element 2, between semiconductor laser 1 and transform lens 3, beam shaping element 2 is for collimating the sending of semiconductor laser 1

Multichannel Parallel light beam, so that transform lens 3 is obtained better focusing effect.Beam shaping element 2 can be selected from: fast axis collimation

Mirror, the combination of fast axis collimation mirror and slow axis collimating mirror or the combination of fast axis collimation mirror and 45 ° of batter post lens arrays.Transform lens 3

Action direction be slow axis, transform lens 3 can be selected from: single spherical surface cylindrical lens, the lens group of multiple spherical surface cylindrical lens composition,

The lens group of single aspheric design or multiple aspheric designs composition.Wherein, the corresponding half of a beam shaping element 2

Conductor laser 1, entire semiconductor laser spectrum beam combination frequency doubling device shares a transform lens 3 and a diffraction grating 4, to subtract

The volume of small semiconductor laser spectrum beam combination frequency doubling device.

The semiconductor laser spectrum beam combination frequency doubling device of the various embodiments described above description realizes that laser spectrum closes beam and frequency multiplication

Process include: by semiconductor laser 1 issue in Multichannel Parallel light beam of 1 inner cavity of semiconductor laser through vibrating through light beam

Shaping element 2 is incident to transform lens 3 after collimating.Each road light beam is focused to diffraction grating 4, diffraction light by transform lens 3 respectively

Grid 4 are set to the rear focal point of transform lens 3, and the road Shi Ge light beam position having the same and angle of diffraction on diffraction grating 4 are realized

Close beam.Realize spectrum width control in the gain ranging and diffraction grating 4 of semiconductor gain media by diffraction grating 4 compressed spectrum

In high efficiency range of diffraction, the spectrum beam combination for the multichannel light beam that noise spectra of semiconductor lasers 1 exports is realized, improve laser output power

And brightness.Close beam after laser by the first lens 5 focus enter frequency-doubling crystal 6, improve frequency-doubling crystal 6 in power density and

Shg efficiency.Frequency-doubling crystal 6 carries out frequency multiplication to laser, the frequency doubled light of wavelength needed for obtaining.Double-frequency laser through frequency-doubling crystal 6 and

Fundamental frequency light collimates vertical incidence to output coupling mirror 8 by the second lens 7.Output coupling mirror 8 passes through anti-reflection frequency doubled light and reflection

Fundamental frequency light, the laser output for making acquisition frequency multiplication, the laser for not obtaining frequency multiplication return to the frequency multiplication again of frequency-doubling crystal 6, it is brilliant to improve frequency multiplication

The transfer efficiency of body 6.Wherein, detailed acquisition high power and the process of High efficiency laser frequency doubling output can refer to above-mentioned each reality

The description of example is applied, details are not described herein again.

To sum up, the application realizes spectrum beam combination by diffraction grating 4, improves the output power of semiconductor laser 1 and bright

Degree, and enter the power density of laser in frequency-doubling crystal 6;Times of frequency-doubling crystal 6 is improved by the first lens 5 and the second lens 7

Frequency efficiency;Fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror 8, most of fundamental frequency light is made to obtain frequency multiplication, improves frequency multiplication

The transfer efficiency of crystal 6, to obtain high power and the output of efficient laser freuqency doubling.

The above content is combine specific preferred embodiment to made by the application further description, and it cannot be said that

The specific implementation of the application is only limited to these instructions.For those of ordinary skill in the art to which this application belongs, exist

Under the premise of not departing from the application design, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the application's

Protection scope.

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